Abstract: An image sensor includes a substrate including a plurality of photoelectric conversion devices, a color filter arranged on the substrate, a reflective absorption layer on the color filter and comprising at least one of tungsten, titanium, and aluminum, an anti-reflective layer arranged on the reflective absorption layer, and a plurality of micro lenses on the anti-reflective layer. The color filter may include a plurality of dielectric layers extending in a first direction that is parallel to a rear surface of the substrate, the plurality of dielectric layers having different thicknesses in a second direction that is perpendicular to the rear surface of the substrate and perpendicular to the first direction, such that the plurality of dielectric layers includes at least one dielectric layer having a thickness in the second direction that varies along the first direction.

Abstract: Image sensors and fabrication methods thereof. For example, the image sensor may include a first substrate having a first surface and a second surface that are opposite to each other, a plurality of pixels provided in the first substrate and arranged in pixel groups, each pixel group including four pixels arranged in two columns and two rows, a pixel separation structure in the first substrate and including a pixel group separation part that separates each pixel group from adjacent pixel groups and a pixel separation part that separates the pixels in each pixel group from each other, and a plurality of microlenses on the first surface and respectively overlapping the plurality of pixel groups. Each of the microlenses includes a central part that has a first curvature and an edge part that has a second curvature. The first curvature is less than the second curvature.

Abstract: An image sensor is presented which includes a pixel array including a plurality of image sensing pixels in a substrate, a phase detection shared pixel in the substrate, the phase detection shared pixel including two phase detection subpixels arranged next to each other, a color filter fence disposed on the plurality of image sensing pixels, and the phase detection shared pixel, the color filter fence defining a plurality of color filter spaces, a plurality of color filter layers respectively disposed in the plurality of color filter spaces on the plurality of image sensing pixels, and the phase detection shared pixel, a first micro-lens disposed on each of the plurality of image sensing pixels to have a first height, and a second micro-lens disposed to vertically overlap the two phase detection subpixels of the phase detection shared pixel and to have a second height greater than the first height.

Abstract: Disclosed is a zinc rechargeable battery, the zinc rechargeable battery including a positive electrode, a zinc-containing negative electrode, a separator between the positive electrode and the negative electrode, and an electrolyte, wherein the zinc rechargeable battery includes an additive and the additive is a compound having a donor number of about 32 or more.

Abstract: Disclosed is a zinc rechargeable battery, the zinc rechargeable battery including a positive electrode, a zinc-containing negative electrode, a separator between the positive electrode and the negative electrode, and an electrolyte, wherein the electrolyte includes a solvent, a zinc salt, and a low kex cation having a solvent exchange rate constant (kex) of less than or equal to about 103 s?1, and in the electrolyte, a molal concentration of the low kex cation in the electrolyte is lower than a molal concentration of a zinc ion.

Abstract: An image sensor is presented which includes a pixel array including a plurality of image sensing pixels in a substrate, a phase detection shared pixel in the substrate, the phase detection shared pixel including two phase detection subpixels arranged next to each other, a color filter fence disposed on the plurality of image sensing pixels, and the phase detection shared pixel, the color filter fence defining a plurality of color filter spaces, a plurality of color filter layers respectively disposed in the plurality of color filter spaces on the plurality of image sensing pixels, and the phase detection shared pixel, a first micro-lens disposed on each of the plurality of image sensing pixels to have a first height, and a second micro-lens disposed to vertically overlap the two phase detection subpixels of the phase detection shared pixel and to have a second height greater than the first height.

Abstract: An image sensor includes a substrate having first and second surfaces opposing each other; photodiodes in the substrate; circuit and wiring structures below the first surface of the substrate; an insulating structure on the second surface of the substrate; a plurality of color filters on the insulating structure; and a grid structure on the insulating structure, wherein at least a portion of the grid structure is between adjacent color filters of, wherein the plurality of color filters include first and second color filters configured to selectively transmit light of different wavelength spectra associated with different colors, wherein the insulating structure includes a first and second regions having respective, different first and second thicknesses, and a boundary region between the first region and the second region that vertically overlaps the first color filter and is horizontally offset from a vertical central axis of the grid structure.

Abstract: A method of fabricating an image sensor includes providing a substrate that includes a plurality of pixel regions, forming an anti-reflection layer on the substrate, forming color filters on the anti-reflection layer, where the color filters are spaced apart from each other by openings, forming pyrolytic polymer patterns between the color filters that fill the openings, forming a capping layer on the color filters and the pyrolytic polymer patterns, and performing a thermal treatment process that removes the pyrolytic polymer patterns and forms air gap regions between the color filters.

Abstract: An image sensor includes a substrate, a pixel isolation pattern in the substrate and defining unit pixel regions in the substrate, color filters on the substrate and corresponding to the unit pixel regions, respectively, a low-refractive index pattern between adjacent color filters of the color filters to at least partially isolate the adjacent color filters from direct contact with each other, an insulating structure between the substrate and the color filters, and a light blocking pattern vertically overlapping with the pixel isolation pattern. The light blocking pattern is within the insulating structure and is isolated from direct contact with the low-refractive index pattern.

Abstract: An image sensor and a method of manufacturing thereof are provided. The image sensor includes a substrate, a grid structure, and color filters. The substrate includes a pixel separation structure defining pixel regions, and a sub-pixel regions for each pixel region. The grid structure is disposed on the substrate and includes first fence segments provided between the sub-pixel regions, and second fence segments provided between neighboring pixel regions. The grid structure defines openings corresponding respectively to the sub-pixel regions. The color filters are disposed in the openings defined by the grid structure. Each of the color filters has a flat top surface and the flat top surface of each color filter is parallel to a bottom surface thereof.

Abstract: Provided is an image sensor including: a substrate including a first pixel domain and a second pixel domain that are adjacent to each other in a first direction, the first pixel domain including first pixels and the second pixel domain including second pixels; a first color filter provided on a first surface of the substrate and vertically overlapping the first pixels; a first microlens provided on the first color filter and each of the first pixels; and a second microlens provided on the first surface of the substrate and vertically overlapping at least a portion of each of the second pixels, wherein a second refractive index of the second microlens is greater than a first refractive index of the first microlens, and wherein a level difference between an uppermost part of the first microlens and an uppermost part of the second microlens is within about 2% of a maximum height of the first microlens.

Abstract: A method of manufacturing a magnetoresistive random-access memory (MRAM) device includes forming an insulating interlayer on a substrate, forming a contact plug extending through the insulating interlayer, forming a first blocking layer covering an upper surface of the contact plug, the first blocking layer including an amorphous material, forming a lower electrode layer on the first blocking layer, and forming a magnetic tunnel junction structure layer on the lower electrode layer.

Abstract: An image sensor is presented which includes a pixel array including a plurality of image sensing pixels in a substrate, a phase detection shared pixel in the substrate, the phase detection shared pixel including two phase detection subpixels arranged next to each other, a color filter fence disposed on the plurality of image sensing pixels, and the phase detection shared pixel, the color filter fence defining a plurality of color filter spaces, a plurality of color filter layers respectively disposed in the plurality of color filter spaces on the plurality of image sensing pixels, and the phase detection shared pixel, a first micro-lens disposed on each of the plurality of image sensing pixels to have a first height, and a second micro-lens disposed to vertically overlap the two phase detection subpixels of the phase detection shared pixel and to have a second height greater than the first height.

Abstract: An image sensor is presented which includes a pixel array including a plurality of image sensing pixels in a substrate, a phase detection shared pixel in the substrate, the phase detection shared pixel including two phase detection subpixels arranged next to each other, a color filter fence disposed on the plurality of image sensing pixels, and the phase detection shared pixel, the color filter fence defining a plurality of color filter spaces, a plurality of color filter layers respectively disposed in the plurality of color filter spaces on the plurality of image sensing pixels, and the phase detection shared pixel, a first micro-lens disposed on each of the plurality of image sensing pixels to have a first height, and a second micro-lens disposed to vertically overlap the two phase detection subpixels of the phase detection shared pixel and to have a second height greater than the first height.

Abstract: An image sensor includes a first substrate including a focus pixel region and pixel regions around the focus pixel region, each of the focus pixel region and the pixel regions including at least one photoelectric conversion region, color filters provided on the focus pixel region and the pixel regions, respectively, and on a first surface of the first substrate, and micro lenses provided on the color filters, respectively. The micro lenses include an auto-focus lens on the focus pixel region, a first micro lens adjacent to the auto-focus lens, and a standard micro lens spaced apart from the auto-focus lens.

Abstract: An image sensor is disclosed. The image sensor may include a plurality of unit pixels, a color filter array provided on the plurality unit pixels, the color filter array including color filters, an anti-reflection layer disposed between the plurality of unit pixels and the color filter array, and a fence pattern including a lower portion buried in the anti-reflection layer and an upper portion separating the color filters from each other. A width of the upper portion of the fence pattern may be greater than a width of the lower portion.

Abstract: Disclosed is an image sensor including a substrate that includes a plurality of pixel sections and having a first surface and a second surface opposite to each other, an antireflective layer disposed on the second surface of the substrate, a passivation layer disposed on the antireflective layer, a plurality of color filters disposed on the passivation layer and corresponding pixel sections, a plurality of micro-lenses disposed on the color filters, and a gap region that separates the micro-lenses from each other. The gap region extends between the color filters and separates the color filters from each other. The gap region exposes a portion of a top surface of the passivation layer. A thickness of the passivation layer is less than a thickness of the antireflective layer.

Abstract: An image sensor is presented which includes a pixel array including a plurality of image sensing pixels in a substrate, a phase detection shared pixel in the substrate, the phase detection shared pixel including two phase detection subpixels arranged next to each other, a color filter fence disposed on the plurality of image sensing pixels, and the phase detection shared pixel, the color filter fence defining a plurality of color filter spaces, a plurality of color filter layers respectively disposed in the plurality of color filter spaces on the plurality of image sensing pixels, and the phase detection shared pixel, a first micro-lens disposed on each of the plurality of image sensing pixels to have a first height, and a second micro-lens disposed to vertically overlap the two phase detection subpixels of the phase detection shared pixel and to have a second height greater than the first height.

Abstract: An image sensor and a method of manufacturing thereof are provided. The image sensor includes a substrate, a grid structure, and color filters. The substrate includes a pixel separation structure defining pixel regions, and a sub-pixel regions for each pixel region. The grid structure is disposed on the substrate and includes first fence segments provided between the sub-pixel regions, and second fence segments provided between neighboring pixel regions. The grid structure defines openings corresponding respectively to the sub-pixel regions. The color filters are disposed in the openings defined by the grid structure. Each of the color filters has a flat top surface and the flat top surface of each color filter is parallel to a bottom surface thereof.

Abstract: An image sensor is disclosed. The image sensor may include a plurality of unit pixels, a color filter array provided on the plurality unit pixels, the color filter array including color filters, an anti-reflection layer disposed between the plurality of unit pixels and the color filter array, and a fence pattern including a lower portion buried in the anti-reflection layer and an upper portion separating the color filters from each other. A width of the upper portion of the fence pattern may be greater than a width of the lower portion.