Patents by Inventor Min-kwan SHIN

Min-kwan SHIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Channel layer for stretchable transistors
    Patent number: 9401487
    Abstract: Provided are a material for forming a channel layer for a stretchable TFT, a method of preparing a channel layer for a stretchable TFT, a channel layer for a stretchable TFT, and a stretchable TFT. The material for forming the channel layer for the stretchable TFT includes an elastomer, an organic semiconductor material and a solvent. By mixing an elastomer and an organic semiconductor material and forming a thin film, a channel layer having an excellent conductivity and stretchability may be obtained.
    Type: Grant
    Filed: November 12, 2013
    Date of Patent: July 26, 2016
    Assignees: SAMSUNG ELECTRONICS CO., LTD., Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Jung-kyun Im, Jong-jin Park, Min-woo Park, Min-kwan Shin, Un-yong Jeong
  • Foldable thin film transistor
    Patent number: 8809844
    Abstract: A foldable thin film transistor (TFT) is provided, the foldable TFT including: a foldable substrate; source and drain electrodes interconnected on the foldable substrate; a channel layer including nanofibers of an organic semiconductor connecting the source and drain electrodes; a gate electrode electronically connected with the source and drain electrodes and the channel layer; and a gate insulating layer disposed between the channel layer and the gate electrode and comprising an ionic liquid and a resin.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: August 19, 2014
    Assignees: Samsung Electronics Co., Ltd., Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Jong-jin Park, Jung-kyun Im, Chwee Iin Choong, Un-yong Jeong, Min-kwan Shin
  • CHANNEL LAYER FOR STRETCHABLE TRANSISTORS
    Publication number: 20140131685
    Abstract: Provided are a material for forming a channel layer for a stretchable TFT, a method of preparing a channel layer for a stretchable TFT, a channel layer for a stretchable TFT, and a stretchable TFT. The material for forming the channel layer for the stretchable TFT includes an elastomer, an organic semiconductor material and a solvent. By mixing an elastomer and an organic semiconductor material and forming a thin film, a channel layer having an excellent conductivity and stretchability may be obtained.
    Type: Application
    Filed: November 12, 2013
    Publication date: May 15, 2014
    Applicants: Industry-Academic Cooperation Foundation, Yonsei University, Samsung Electronics Co., Ltd.
    Inventors: Jung-kyun IM, Jong-jin PARK, Min-woo PARK, Min-kwan SHIN, Un-yong JEONG
  • FOLDABLE THIN FILM TRANSISTOR
    Publication number: 20130140531
    Abstract: A foldable thin film transistor (TFT) is provided, the foldable TFT including: a foldable substrate; source and drain electrodes interconnected on the foldable substrate; a channel layer including nanofibers of an organic semiconductor connecting the source and drain electrodes; a gate electrode electronically connected with the source and drain electrodes and the channel layer; and a gate insulating layer disposed between the channel layer and the gate electrode and comprising an ionic liquid and a resin.
    Type: Application
    Filed: August 23, 2012
    Publication date: June 6, 2013
    Applicants: Industry-Academic Cooperation Foundation, Yonsei University, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-jin PARK, Jung-kyun IM, Chwee lin CHOONG, Un-yong JEONG, Min-kwan SHIN