Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: A blankmask for extreme ultraviolet lithography includes a substrate, a reflective layer formed on the substrate, and a phase shift layer formed on the reflective layer. The phase shift layer contains niobium (Nb), and is made of a material containing one of tantalum (Ta), chromium (Cr), and ruthenium (Ru). A phase shift layer containing Nb and Ta has a relative reflectance of 5 to 20%, a phase shift layer containing Nb and Cr has a relative reflectance of 9 to 15%, and a phase shift layer containing Nb and Ru has a relative reflectance of 20% or more. The phase shift layer has a phase shift amount of 170 to 230°, and has a surface roughness of 0.5 nmRMS or less. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: A blankmask for extreme ultraviolet lithography includes a substrate, a reflective layer formed on the substrate, and a phase shift layer formed on the reflective layer. The phase shift layer contains niobium (Nb), and is made of a material containing one of tantalum (Ta), chromium (Cr), and ruthenium (Ru). A phase shift layer containing Nb and Ta has a relative reflectance of 5 to 20%, a phase shift layer containing Nb and Cr has a relative reflectance of 9 to 15%, and a phase shift layer containing Nb and Ru has a relative reflectance of 20% or more. The phase shift layer has a phase shift amount of 170 to 230°, and has a surface roughness of 0.5 nmRMS or less. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.