Patents by Inventor Minkyoung JOO

Minkyoung JOO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic memory device
    Patent number: 10418548
    Abstract: A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: September 17, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Shinhee Han, Kiseok Suh, KyungTae Nam, Woojin Kim, Kwangil Shin, Minkyoung Joo, Gwanhyeob Koh
  • MAGNETIC MEMORY DEVICE
    Publication number: 20180309052
    Abstract: A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.
    Type: Application
    Filed: June 26, 2018
    Publication date: October 25, 2018
    Inventors: Shinhee HAN, Kiseok SUH, KyungTae NAM, Woojin KIM, Kwangil SHIN, Minkyoung JOO, Gwanhyeob KOH
  • Magnetic memory device and method of fabricating the same
    Patent number: 10032981
    Abstract: A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: July 24, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Shinhee Han, Kiseok Suh, KyungTae Nam, Woojin Kim, Kwangil Shin, Minkyoung Joo, Gwanhyeob Koh
  • MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20170092851
    Abstract: A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.
    Type: Application
    Filed: August 23, 2016
    Publication date: March 30, 2017
    Inventors: Shinhee HAN, Kiseok SUH, KyungTae NAM, Woojin KIM, Kwangil SHIN, Minkyoung JOO, Gwanhyeob KOH