Abstract: The present disclosure relates to a recycled positive electrode active material, a method of producing the recycled positive electrode active material, and a secondary battery including the same. The recycled positive electrode active material, including: 60 mol % or more of Ni; and crystalline LiF, or 0.24% by weight or less of residual Li2CO3, where the recycled positive electrode active material is one or more selected from the group consisting of a lithium nickel oxide (LNO)-based positive electrode active material, a nickel·cobalt·manganese (NCM)-based positive electrode active material, a nickel·cobalt·aluminum (NCA)-based positive electrode active material, and a nickel·cobalt·manganese·aluminum (NCMA)-based positive electrode active material.

Abstract: The present disclosure relates to a recycled cathode active material, a method of producing the same, and a secondary battery including the same. Specifically, the method of producing a recycled cathode active material according to the present disclosure includes: step (a) of separating a current collector from a cathode active material layer and recovering a cathode active material in the cathode active material layer by thermally decomposing a binder and a conductive material in the cathode active material layer by heat-treating a waste cathode including the current collector and the cathode active material layer formed on the current collector; and step (b) of adding a lithium precursor and a cobalt-containing coating agent to the recovered cathode active material and performing annealing.

Abstract: The present disclosure relates to a recycled positive electrode active material, a method of producing the recycled positive electrode active material, and a secondary battery including the same. The recycled positive electrode active material, including: 60 mol % or more of Ni, 250 mg/kg or less of fluorine (F), and having a crystallite size of 122 nm or less, where the recycled positive electrode active material is one or more selected from the group consisting of a lithium nickel oxide (LNO)-based positive electrode active material, a nickel·cobalt·manganese (NCM)-based positive electrode active material, a nickel·cobalt·aluminum (NCA)-based positive electrode active material, and a nickel·cobalt·manganese·aluminum (NCMA)-based positive electrode active material.

Abstract: The present invention relates to a cured product having excellent stain resistance and low gloss, a method of manufacturing the same, and an interior material including the cured product. The cured product according to the present invention includes, along with an acrylic oligomer, an oligomer having a functional group containing silicon (Si) and an oligomer having a functional group containing fluorine (F), and thus, has excellent stain resistance and can implement a micro-folded structure on a surface thereof through extreme ultraviolet rays to be used during curing, thereby being capable of realizing low gloss without a matting agent.

Abstract: Embodiments of the present disclosure relate to a memory system and an operating method thereof. A memory system may include a memory device and a memory controller configured to, when receiving from the host a flush command instructing to flush data cached in a data cache to the memory device, flush first data cached in the data cache, the first data having a size smaller than a size of the reference write unit, to the memory device, write a first parity associated with the first data to a parity memory block, update a value of a parity location pointer indicating a location where the first parity is written, and set a parity write flag indicating whether the parity at the location pointed by the parity location pointer is valid.

Abstract: A method of operating a controller that controls an operation of a semiconductor memory device including a meta area, a normal area, and a state area, includes sensing a turn-on of a memory system including the controller, checking a last state flag among at least one or more state flags stored in the state area, and determining whether to perform a reclaim operation on meta data stored in the meta area based on the checked state flag.

Abstract: Embodiments of the disclosed technology relate to a memory system, and a memory controller and a method of operating the same. In performing a recovery operation after occurrence of sudden power off (SPO), by determining whether to delete, from a memory device, journaling information associated with data stored in a target open memory block based on the state of the memory device, thereby preventing unnecessary data movement in a situation where the number of free memory blocks included in the memory device is insufficient, and maintaining the number of free memory blocks included in the memory device to a predetermined value or more.

Abstract: Embodiments of the present disclosure relate to a memory system and an operating method thereof. A memory system may include a memory device and a memory controller configured to, when receiving from the host a flush command instructing to flush data cached in a data cache to the memory device, flush first data cached in the data cache, the first data having a size smaller than a size of the reference write unit, to the memory device, write a first parity associated with the first data to a parity memory block, update a value of a parity location pointer indicating a location where the first parity is written, and set a parity write flag indicating whether the parity at the location pointed by the parity location pointer is valid.

Abstract: A method of operating a controller that controls an operation of a semiconductor memory device including a meta area, a normal area, and a state area, includes sensing a turn-on of a memory system including the controller, checking a last state flag among at least one or more state flags stored in the state area, and determining whether to perform a reclaim operation on meta data stored in the meta area based on the last state flag.

Abstract: Embodiments of the disclosed technology relate to a memory system, and a memory controller and a method of operating the same. In performing a recovery operation after occurrence of sudden power off (SPO), by determining whether to delete, from a memory device, journaling information associated with data stored in a target open memory block based on the state of the memory device, thereby preventing unnecessary data movement in a situation where the number of free memory blocks included in the memory device is insufficient, and maintaining the number of free memory blocks included in the memory device to a predetermined value or more.

Abstract: A memory system and an operating method thereof are provided. The memory system includes a buffer memory storing a plurality of meta-slices constituting meta-data, and a memory controller marking meta-slices being updated, among the plurality of meta-slices stored in the buffer memory, as dirty meta-slices, generating journal data including update information corresponding to the dirty meta-slices, and flushing the journal data together with one of the dirty meta-slices to a non-volatile memory device.