Patents by Inventor Min Kyung Ko

Min Kyung Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Device including a sidewall Schottky interface
    Patent number: 10396216
    Abstract: In one general aspect, a device can include a first trench disposed in a semiconductor region, a second trench disposed in the semiconductor region, and a recess disposed in the semiconductor region between the first trench and the second trench. The recess has a sidewall and a bottom surface. The device also includes a Schottky interface along a sidewall of the recess and the bottom surface of the recess excludes a Schottky interface.
    Type: Grant
    Filed: May 3, 2017
    Date of Patent: August 27, 2019
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Yi Su, Ashok Challa, Tirthajyoti Sarkar, Min Kyung Ko
  • DEVICE INCLUDING A SIDEWALL SCHOTTKY INTERFACE
    Publication number: 20180323273
    Abstract: In one general aspect, a device can include a first trench disposed in a semiconductor region, a second trench disposed in the semiconductor region, and a recess disposed in the semiconductor region between the first trench and the second trench. The recess has a sidewall and a bottom surface. The device also includes a Schottky interface along a sidewall of the recess and the bottom surface of the recess excludes a Schottky interface.
    Type: Application
    Filed: May 3, 2017
    Publication date: November 8, 2018
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Yi SU, Ashok CHALLA, Tirthajyoti SARKAR, Min Kyung KO
  • Capacitor for semiconductor device and manufacturing method of capacitor for semiconductor device
    Patent number: 8587048
    Abstract: Disclosed are a capacitor for a semiconductor device and a manufacturing method thereof. The capacitor includes a second oxide layer filling a first trench in a semiconductor substrate; second and third trenches in an active region at opposing sides of the second oxide layer in the first trench; a third oxide layer on the semiconductor substrate and on inner surfaces of the second and third trenches; and a polysilicon layer on the third oxide layer to fill the second and third trenches.
    Type: Grant
    Filed: December 10, 2010
    Date of Patent: November 19, 2013
    Assignee: Dongbu Hitek Co., Ltd.
    Inventors: Dong Hoon Park, Jin Hyo Jung, Min Kyung Ko
  • CAPACITOR FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF CAPACITOR FOR SEMICONDUCTOR DEVICE
    Publication number: 20110140186
    Abstract: Disclosed are a capacitor for a semiconductor device and a manufacturing method thereof. The capacitor includes a second oxide layer filling a first trench in a semiconductor substrate; second and third trenches in an active region at opposing sides of the second oxide layer in the first trench; a third oxide layer on the semiconductor substrate and on inner surfaces of the second and third trenches; and a polysilicon layer on the third oxide layer to fill the second and third trenches.
    Type: Application
    Filed: December 10, 2010
    Publication date: June 16, 2011
    Applicant: DONGBU HITEK CO., LTD.
    Inventors: Dong Hoon Park, Jin Hyo Jung, Min Kyung Ko