Abstract: A method includes forming a first conductive feature in a first dielectric layer. A second dielectric layer is formed over the first conductive feature and the first dielectric layer. An opening is formed in the second dielectric layer. The opening exposes a top surface of the first conductive feature. The top surface of the first conductive feature includes a first metallic material and a second metallic material different from the first metallic material. A native oxide layer is removed from the top surface of the first conductive feature. A surfactant soaking process is performed on the top surface of the first conductive feature. The surfactant soaking process forms a surfactant layer over the top surface of the first conductive feature. A first barrier layer is deposited on a sidewall of the opening. The surfactant layer remains exposed at the end of depositing the first barrier layer.

Abstract: Embodiments of this application provide example resource allocation methods. One example method includes determining, by a first node, a hash value corresponding to a first cluster. The first node can obtain a hash ring, where the hash ring includes at least one hash value interval, and each hash value interval corresponds to one second cluster. The first node can determine a target second cluster based on the hash value corresponding to the first cluster, where the hash value corresponding to the first cluster belongs to a target hash interval, the target hash interval is a hash value interval in the at least one hash value interval, and the target hash interval corresponds to the target second cluster. The first node can establish an association relationship between the first cluster and a target second cluster, where the target second cluster is allowed to apply for a resource from the first cluster.

Abstract: A heat dissipation structure includes a main body having a plurality of radiating fins. The radiating fins are coated on outer surfaces with a heat-exchange layer formed of a plurality of powder-like granules. With the heat-exchange layer, the main body may have increased surface areas for heat dissipation to provide upgraded heat dissipation efficiency.

Abstract: A method includes forming a gate structure over fins protruding from a semiconductor substrate; forming an isolation region surrounding the fins; depositing a spacer layer over the gate structure and over the fins, wherein the spacer layer fills the regions extending between pairs of adjacent fins; performing a first etch on the spacer layer, wherein after performing the first etch, first remaining portions of the spacer layer that are within inner regions extending between pairs of adjacent fins have a first thickness and second remaining portions of the spacer layer that are not within the inner regions have a second thickness less than the first thickness; and forming an epitaxial source/drain region adjacent the gate structure and extending over the fins, wherein portions of the epitaxial source/drain region within the inner regions are separated from the first remaining portions of the spacer layer.

Abstract: The present invention provides novel substituted benzimidazole derivatives used as DAAO inhibitors and for treatment and/or prevention of neurological disorders.

Abstract: Provided are an application key deletion method, a key anchor node, a server, a system and a medium. The application key deletion method includes: receiving an AKMA context deletion request, where a user identifier is carried in the AKMA context deletion request; according to the user identifier, searching a corresponding AKMA context and an application server identifier corresponding to the AKMA context; and in response to finding the application server identifier, sending an application key deletion request message and deleting the AKMA context.

Abstract: A method includes: a first electronic device displaying a first interface, and sending first information to a second electronic device, where the first information includes one or more interface elements on the first interface and tag information of the interface elements; and the second electronic device displaying a second interface based on the tag information of the one or more interface elements on the first interface, where the second interface includes a first display window and a second display window, at least some interface elements of the one or more interface elements on the first interface are displayed in the first display window, the second display window displays a display interface associated with a first interface element, and the at least some interface elements include the first interface element.

Abstract: Methods of forming a low-resistance source/drain feature for a multi-gate device are provided. A example method includes forming a fin-shaped structure that includes a plurality of channel layers interleaved by a plurality of sacrificial layers, recessing a source/drain region of the fin-shaped structure to form a source/drain recess, selectively and partially recessing sidewalls of the plurality of sacrificial layers to form inner spacer recesses, forming inner spacers in the inner spacer recesses, forming a bottom dielectric layer over the substrate, depositing a first epitaxial layer over the inner spacers and the sidewalls of the plurality of the channel layers, performing a thermal treatment to reshape the first epitaxial layer, after the performing of the thermal treatment, depositing a second epitaxial layer over the first epitaxial layer. The first epitaxial layer includes germanium and the second epitaxial layer is free of germanium.

Abstract: Various back end of line (BEOL) layer formation techniques described herein enable reduced contact resistance, reduced surface roughness, and/or increased semiconductor device performance for BEOL layers such as interconnects and/or metallization layers.

Abstract: A method includes: receiving a current data packet of a target service; adding detection indication information to the current data packet, to obtain a target data packet, where the detection indication information includes a target phase category corresponding to the current data packet, the target phase category is used to indicate a target phase in at least one key phase in which the current data packet is located in the target service, and the detection indication information is used to indicate to detect the current data packet; and transmitting the target data packet to a next hop node.

Abstract: A semiconductor package structure and a byproduct of a semiconductor component. The semiconductor package structure including a lead frame, a nanotwinned metal layer, a semiconductor component and a molding layer. The lead frame includes a supporting part and a circuit part. The nanotwinned metal layer is located on the supporting part. The semiconductor component is disposed on the nanotwinned metal layer. The nanotwinned metal layer is located between the supporting part and the semiconductor component. The semiconductor component is electrically connected to the circuit part. The molding layer covers the nanotwinned metal layer and the semiconductor component.

Abstract: A device includes a first fin and a second fin extending from a substrate, the first fin including a first recess and the second fin including a second recess, an isolation region surrounding the first fin and surrounding the second fin, a gate stack over the first fin and the second fin, and a source/drain region in the first recess and in the second recess, the source/drain region adjacent the gate stack, wherein the source/drain region includes a bottom surface extending from the first fin to the second fin, wherein a first portion of the bottom surface that is below a first height above the isolation region has a first slope, and wherein a second portion of the bottom surface that is above the first height has a second slope that is greater than the first slope.

Abstract: A device includes a first nanostructure over a semiconductor substrate; a second nanostructure over the first nanostructure; a gate structure surrounding the first nanostructure and the second nanostructure; a first epitaxial region in the semiconductor substrate adjacent the gate structure, wherein the first epitaxial region is a first doped semiconductor material; and a second epitaxial region over the first epitaxial region, wherein the second epitaxial region is adjacent the first nanostructure and the second nanostructure, wherein the second epitaxial region is a second doped semiconductor material that is different from the first doped semiconductor material. In an embodiment, the first doped semiconductor material has a smaller doping concentration than the second doped semiconductor material.

Abstract: An ink cartridge includes an ink container and a cartridge shell. The cartridge shell has a printhead and a mounting member which are disposed on the cartridge shell. The ink container is detachably connected to the mounting member. The ink container includes an ink container body and an ink outlet assembly. The ink container body includes an ink storage cavity configured to store ink. An ink inlet of the ink outlet assembly communicates with the ink storage cavity. An ink outlet of the ink outlet assembly communicates with an ink entry of the printhead. The ink container is connected to the cartridge shell with the arrangement of the mounting member and through the connection between the mounting member and the ink container.

Abstract: A method of making semiconductor device includes forming an insulating layer. The method further includes patterning the insulating layer to define a via opening and a conductive line opening. The method further includes forming a via in the via opening. The method further includes forming a conductive line in the conductive line opening. Forming the conductive line includes forming a first liner layer, wherein a first thickness of the first liner layer over the via is less than a second thickness of the first liner layer over the insulating layer, and forming a conductive fill, wherein the first liner layer surrounds the conductive fill.

Abstract: A method includes forming a first conductive feature in a first dielectric layer. A second dielectric layer is formed over the first conductive feature and the first dielectric layer. An opening is formed in the second dielectric layer. The opening exposes a top surface of the first conductive feature. The top surface of the first conductive feature includes a first metallic material and a second metallic material different from the first metallic material. A native oxide layer is removed from the top surface of the first conductive feature. A surfactant soaking process is performed on the top surface of the first conductive feature. The surfactant soaking process forms a surfactant layer over the top surface of the first conductive feature. A first barrier layer is deposited on a sidewall of the opening. The surfactant layer remains exposed at the end of depositing the first barrier layer.

Abstract: The present invention provides novel substituted benzimidazole derivatives used as DAAO inhibitors and for treatment and/or prevention of neurological disorders.

Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. The semiconductor device further includes an air gap between the inner spacer and the source/drain feature.

Abstract: A method and apparatus for determining alarm flood cause are disclosed. A method performed by a network node comprises obtaining alarm data comprising a specific type of alarm (302); detecting an alarm flood of the alarm data (304); obtaining data from at least one vendor related to the alarm data (306); determining at least one root cause of the alarm flood of alarm data based on the data from at least one vendor and the alarm data (308).

Abstract: The present disclosure is designed to determine appropriate spatial resources for uplink control channels. A user terminal has a receiving section that receives, through higher layer signaling, a plurality of entries of information related to a spatial resource for an uplink control channel, and receives specifying information that specifies, amongst the plurality of entries, entries that correspond respectively to the plurality of uplink control channel resources, by means of a control element of media access control, and a control section that controls determination of one of the plurality of uplink control channel resources, and controls transmission of the uplink control channel, by using an entry that corresponds to the determined uplink control channel resource, amongst the specified entries.