Patents by Inventor Min-Nan Tseng
Min-Nan Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230307527Abstract: Provided is a heterojunction bipolar transistor (HBT), including a collector layer. The collector layer includes a bandgap graded layer. A quasi-electric field generated by the bandgap graded layer will enable electrons in the bandgap graded layer to be accelerated. The bandgap graded layer includes a semiconductor material in which an electron velocity peaks at a certain quasi-electric field strength when an quasi-electric field strength is varied, wherein the certain quasi-electric field strength is referred to as a peak electric field strength. The strength of the quasi-electric field is more than 2 times the peak electric field strength.Type: ApplicationFiled: June 2, 2023Publication date: September 28, 2023Inventors: Chao-Hsing HUANG, Yu-Chung CHIN, Min-Nan TSENG, Kai-Yu CHEN
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Patent number: 11133405Abstract: Provided is a high ruggedness HBT, including a first emitter cap layer and a second emitter cap layer formed between an emitter layer and an ohmic contact layer, or only an emitter cap layer is formed between them. When the first and second emitter cap layers are provided, bandgaps of the first or second emitter cap layer are changed, and the ruggedness of the HBT is improved. When an emitter cap layer is provided, an electron affinity of at least a portion of the emitter cap layer is less than or approximately equal to an electron affinity of the emitter layer, and the ruggedness of the HBT is improved.Type: GrantFiled: March 5, 2020Date of Patent: September 28, 2021Assignee: VISUAL PHOTONICS EPITAXY CO., LTD.Inventors: Chao-Hsing Huang, Yu-Chung Chin, Min-Nan Tseng, Kai-Yu Chen
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Publication number: 20210226045Abstract: Provided is a heterojunction bipolar transistor (HBT), including a collector layer. The collector layer includes a bandgap graded. A quasi-electric field generated by the bandgap graded will enable electrons in the bandgap graded layer to be accelerated.Type: ApplicationFiled: January 22, 2021Publication date: July 22, 2021Inventors: Chao-Hsing Huang, Yu-Chung Chin, Min-Nan Tseng, Kai-Yu Chen
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Patent number: 11049936Abstract: The disclosure provides a high ruggedness HBT structure, including: a sub-collector layer on a substrate and formed of an N-type III-V semiconductor material; a collector layer on the sub-collector layer and formed of a III-V semiconductor material; a base layer on the collector layer and formed of a P-type III-V semiconductor material; an emitter layer on the base layer and formed of one of N-type semiconductor materials of InGaP, InGaAsP and InAlGaP; a first emitter cap layer on the emitter layer and formed of one of undoped or N-type semiconductor materials of AlxGa1-xAs, AlxGa1-xAs1-yNy, AlxGa1-xAs1-zPz, AlxGa1-xAs1-wSbw, and InrAlxGa1-x-rAs, x having a highest value between 0.05?x?0.4, and y, z, r, w?0.1; a second emitter cap layer on the first emitter cap layer and formed of an N-type III-V semiconductor material; and an ohmic contact layer on the second emitter cap layer and formed of an N-type III-V semiconductor material.Type: GrantFiled: March 5, 2019Date of Patent: June 29, 2021Assignee: VISUAL PHOTONICS EPITAXY CO., LTD.Inventors: Yu-Chung Chin, Chao-Hsing Huang, Min-Nan Tseng, Kai-Yu Chen
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Patent number: 10818781Abstract: Provided is a heterojunction bipolar transistor (HBT) structure with a bandgap graded hole barrier layer, including: a sub-collector layer including an N-type group III-V semiconductor on a substrate, a collector layer on the sub-collector layer and including a group III-V semiconductor, a hole barrier layer on the collector layer, a base layer on the hole barrier layer and including a P-type group III-V semiconductor, an emitter layer on the base layer and including an N-type group III-V semiconductor, an emitter cap layer on the emitter layer and including an N-type group III-V semiconductor, and an ohmic contact layer on the emitter cap layer and including an N-type group III-V semiconductor. Bandgaps of the hole barrier layer at least include a gradually increasing bandgap from the base layer towards the collector layer and a largest bandgap of the hole barrier layer is greater than bandgap of the base layer.Type: GrantFiled: February 20, 2020Date of Patent: October 27, 2020Assignee: VISUAL PHOTONICS EPITAXY CO., LTD.Inventors: Chao-Hsing Huang, Yu-Chung Chin, Min-Nan Tseng, Kai-Yu Chen
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Publication number: 20200203510Abstract: Provided is a high ruggedness HBT, including a first emitter cap layer and a second emitter cap layer formed between an emitter layer and an ohmic contact layer, or only an emitter cap layer is formed between them. When the first and second emitter cap layers are provided, bandgaps of the first or second emitter cap layer are changed, and the ruggedness of the HBT is improved. When an emitter cap layer is provided, an electron affinity of at least a portion of the emitter cap layer is less than or approximately equal to an electron affinity of the emitter layer, and the ruggedness of the HBT is improved.Type: ApplicationFiled: March 5, 2020Publication date: June 25, 2020Inventors: Chao-Hsing Huang, Yu-Chung Chin, Min-Nan Tseng, Kai-Yu Chen
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Publication number: 20200194573Abstract: Provided is a heterojunction bipolar transistor (HBT) structure with a bandgap graded hole barrier layer, including: a sub-collector layer including an N-type group III-V semiconductor on a substrate, a collector layer on the sub-collector layer and including a group III-V semiconductor, a hole barrier layer on the collector layer, a base layer on the hole barrier layer and including a P-type group III-V semiconductor, an emitter layer on the base layer and including an N-type group III-V semiconductor, an emitter cap layer on the emitter layer and including an N-type group III-V semiconductor, and an ohmic contact layer on the emitter cap layer and including an N-type group III-V semiconductor. Bandgaps of the hole barrier layer at least include a gradually increasing bandgap from the base layer towards the collector layer and a largest bandgap of the hole barrier layer is greater than bandgap of the base layer.Type: ApplicationFiled: February 20, 2020Publication date: June 18, 2020Inventors: Chao-Hsing Huang, Yu-Chung Chin, Min-Nan Tseng, Kai-Yu Chen
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Publication number: 20200161421Abstract: The disclosure provides a high ruggedness HBT structure, including: a sub-collector layer on a substrate and formed of an N-type III-V semiconductor material; a collector layer on the sub-collector layer and formed of a III-V semiconductor material; a base layer on the collector layer and formed of a P-type III-V semiconductor material; an emitter layer on the base layer and formed of one of N-type semiconductor materials of InGaP, InGaAsP and InAlGaP; a first emitter cap layer on the emitter layer and formed of one of undoped or N-type semiconductor materials of AlxGa1-xAs, AlxGa1-xAs1-yNy, AlxGa1-xAs1-zPz, AlxGa1-xAs1-wSbw, and InrAlxGa1-x-rAs, x having a highest value between 0.05?x?0.4, and y, z, r, w?0.1; a second emitter cap layer on the first emitter cap layer and formed of an N-type III-V semiconductor material; and an ohmic contact layer on the second emitter cap layer and formed of an N-type III-V semiconductor material.Type: ApplicationFiled: March 5, 2019Publication date: May 21, 2020Inventors: Yu-Chung Chin, Chao-Hsing Huang, Min-Nan Tseng, Kai-Yu Chen
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Patent number: 10651298Abstract: The disclosure provides an HBT structure with bandgap graded hole barrier layer, comprising: a sub-collector layer, a collector layer, a hole barrier layer, a base layer, an emitter layer, an emitter cap layer, and an ohmic contact layer, all stacked sequentially on a substrate; with the hole barrier layer formed of at least one of AlGaAs, AlGaAsN, AlGaAsP, AlGaAsSb, and InAlGaAs, Aluminum composition being less than 22%, and In, N, P, and Sb compositions being respectively less than or equal to 10%; wherein bandgaps of the hole barrier layer at least comprise a gradually increasing bandgap from the base layer towards the collector layer and the largest bandgap of the hole barrier layer is greater than bandgaps of the base layer and the collector layer.Type: GrantFiled: October 16, 2018Date of Patent: May 12, 2020Assignee: VISUAL PHOTONICS EPITAXY CO., LTD.Inventors: Yu-Chung Chin, Chao-Hsing Huang, Min-Nan Tseng, Kai-Yu Chen
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Publication number: 20190115458Abstract: The disclosure provides an HBT structure with bandgap graded hole barrier layer, comprising: a sub-collector layer, a collector layer, a hole barrier layer, a base layer, an emitter layer, an emitter cap layer, and an ohmic contact layer, all stacked sequentially on a substrate; with the hole barrier layer formed of at least one of AlGaAs, AlGaAsN, AlGaAsP, AlGaAsSb, and InAlGaAs, Aluminum composition being less than 22%, and In, N, P, and Sb compositions being respectively less than or equal to 10%; wherein bandgaps of the hole barrier layer at least comprising a gradually increasing bandgap from the base layer towards the collector layer and the largest bandgap of the hole barrier layer being greater than bandgaps of the base layer and the collector layer. The present invention can effectively enhance the overall device performance.Type: ApplicationFiled: October 16, 2018Publication date: April 18, 2019Inventors: Yu-Chung Chin, Chao-Hsing Huang, Min-Nan Tseng, Kai-Yu Chen
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Patent number: 9853136Abstract: A directed epitaxial heterojunction bipolar transistor (HBT) structure is directly or indirectly formed on a GaAs substrate that is formed by a (100) face towards a (111)B face with an angle of inclination between 0.6° and 25°, and includes a sub-collector layer, a collector, a base layer, an emitter layer, an emitter cap layer and an ohmic contact layer, which are sequentially formed on the substrate. A tunnel collector layer formed by InGaP or InGaAsP is provided between the collector layer and the base layer. Since an epitaxial process is performed on the substrate from a (100) face towards a (111)B face with an angle of inclination between 0.6° and 25°, indium and gallium contained in InGaP or InGaAsP are affected by the ordering effect such that InGaP or InGaAsP used in the emitter layer and/or the tunnel collector layer has a higher electron affinity or a smaller bandgap.Type: GrantFiled: November 7, 2014Date of Patent: December 26, 2017Assignee: VISUAL PHOTONICS EPITAXY CO., LTD.Inventors: Yu-Chung Chin, Chao-Hsing Huang, Min-Nan Tseng
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Publication number: 20150255585Abstract: A directed epitaxial heterojunction bipolar transistor (HBT) structure is directly or indirectly formed on a GaAs substrate that is formed by a (100) face towards a (111)B face with an angle of inclination between 0.6° and 25°, and includes a sub-collector layer, a collector, a base layer, an emitter layer, an emitter cap layer and an ohmic contact layer, which are sequentially formed on the substrate. A tunnel collector layer formed by InGaP or InGaAsP is provided between the collector layer and the base layer. Since an epitaxial process is performed on the substrate from a (100) face towards a (111)B face with an angle of inclination between 0.6° and 25°, indium and gallium contained in InGaP or InGaAsP are affected by the ordering effect such that InGaP or InGaAsP used in the emitter layer and/or the tunnel collector layer has a higher electron affinity or a smaller bandgap.Type: ApplicationFiled: November 7, 2014Publication date: September 10, 2015Inventors: Yu-Chung Chin, Chao-Hsing Huang, Min-Nan Tseng
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Patent number: 8518393Abstract: The present invention cloned melanin biosynthesis genes encoding polyketide synthase (PKS), scytalone dehydratase (SCD) and 1.3.8-trihydroxynaphthalene reductase (THN) from the dematiaceous Alternasia alternate into plasmid pCAMBIA1300, followed by transformation of the plasmid into Matarhizium anisopliae via Agrobacterium tumefaciens-mediated transformation. The transformant was able to express the abovementioned genes and synthesize melanin, which then showed enhanced UV tolerance. The transcription and expression of these melanin genes were confirmed in several pathways. The tolerances toward UV radiation, drought and high temperature were increased significantly in these transformants. In addition, the host insects were more susceptible to these transformants under UV radiation.Type: GrantFiled: November 26, 2010Date of Patent: August 27, 2013Assignees: Kaohsiung District Agricultral Research and Extension Station, COA, EY, National Taiwan UniversityInventors: Min-Nan Tseng, Shean-Shong Tzean
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Patent number: 7224005Abstract: A material made by arranging layers of gallium-arsenide-antimonide (GaAsxSb1-x, 0.0?x?1.0) and/or indium-gallium-arsenic-nitride (InyGa1-yAszN1-z, 0.0?y, z?1.0) in a specific order is used to form the transistor base of a heterojunction bipolar transistor. By controlling the compositions of the materials indium-gallium-arsenic-nitride and gallium-arsenide-antimonide, and by changing the thickness and order of the layers, the new material would possess a specific energy gap, which in turn determines the base-emitter turn-on voltage of the heterojunction bipolar transistor.Type: GrantFiled: September 3, 2004Date of Patent: May 29, 2007Assignee: Visual Photonics Epitaxy Co., Ltd.Inventors: Chao-Hsing Huang, Yu-Chung Chin, Min-Nan Tseng, Huai-Tung Yang, Kun-Chuan Lin, Shih-Jane Tsai
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Publication number: 20050051799Abstract: A material made by arranging layers of gallium-arsenide-antimonide (GaAsxSb1?x, 0.0?x?1.0) and/or indium-gallium-arsenic-nitride (InyGa1?yAszN1?z, 0.0?y, z?1.0) in a specific order is used to form the transistor base of a heterojunction bipolar transistor. By controlling the compositions of the materials indium-gallium-arsenic-nitride and gallium-arsenide-antimonide, and by changing the thickness and order of the layers, the new material would possess a specific energy gap, which in turn determines the base-emitter turn-on voltage of the heterojunction bipolar transistor.Type: ApplicationFiled: September 3, 2004Publication date: March 10, 2005Inventors: Chao-Hsing Huang, Yu-Chung Chin, Min-Nan Tseng, Huai-Tung Yang, Kun-Chuan Lin, Shih-Jane Tsai