Patents by Inventor Min-Nin Yu

Min-Nin Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070193959
    Abstract: A drip-filter extraction apparatus comprises a container, a flow rate controller and an extraction device. The container receives a liquid therein. The flow rate controller controls the liquid in the container flowing out at a constant flow rate. The extraction device collects the liquid and mixes it with extraction material to form a mixed liquid, and then the extraction device filters and collects the mixed liquid.
    Type: Application
    Filed: February 20, 2007
    Publication date: August 23, 2007
    Inventor: Min Nin Yu
  • Patent number: 7205209
    Abstract: A method of fabricating a stacked dielectric layer for suppressing electrostatic charge buildup. First, a substrate having metal layers thereon is provided, with a plurality of gaps formed therebetween. Next, a dielectric layer is formed by simultaneous deposition and ion-bombardment, such that the dielectric layer covers the bottom dielectric liner and fills the gaps. Finally, a top dielectric liner is formed on the dielectric layer by deposition without ion-bombardment. Furthermore, the present invention provides another method to fabricate a stacked dielectric layer by performing a plasma treatment on the dielectric layer to suppress electrostatic charge buildup. As a result, the above-mentioned methods can efficiently avoid metal extrusion issues.
    Type: Grant
    Filed: May 11, 2004
    Date of Patent: April 17, 2007
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chai-Tak Teh, Min-Nin Yu, Gary Yang, Han-Chung Chen, Yuan-Shin Jing, Jian-Liang Lin, Jui-Feng Jao
  • Publication number: 20050255704
    Abstract: A method of fabricating a stacked dielectric layer for suppressing electrostatic charge buildup. First, a substrate having metal layers thereon is provided, with a plurality of gaps formed therebetween. Next, a dielectric layer is formed by simultaneous deposition and ion-bombardment, such that the dielectric layer covers the bottom dielectric liner and fills the gaps. Finally, a top dielectric liner is formed on the dielectric layer by deposition without ion-bombardment. Furthermore, the present invention provides another method to fabricate a stacked dielectric layer by performing a plasma treatment on the dielectric layer to suppress electrostatic charge buildup. As a result, the above-mentioned methods can efficiently avoid metal extrusion issues.
    Type: Application
    Filed: May 11, 2004
    Publication date: November 17, 2005
    Inventors: Chai-Tak Teh, Min-Nin Yu, Gary Yang, Han-Chung Chen, Yuan-Shin Jing, Jian-Liang Lin, Jui-Feng Jao