Abstract: An ashing apparatus for semiconductor wafers includes a reaction chamber, a plasma quartz that generates plasma ions, an ion ejector provided at a side wall of the reaction chamber and through which the plasma ions are ejected into the reaction chamber, a chamber upper cover of quartz through which light radiated from a halogen lamp is transmitted for ashing a wafer by heat of the light, and a distribution pipe coupled to the ion ejector and disposed within the reaction chamber that directly sprays the ions ejected from the ion ejector onto the wafer. The distribution pipe has a plurality of ejection holes formed along a circumference thereof and through which the plasma ions are ejected toward and uniformly sprayed on the wafer.

Abstract: A chuck plate of ashing equipment for fabricating a semiconductor device facilitates the removal of polymer from the lower surface of a wafer while photoresist is being removed from the upper surface of the wafer by etching. The chuck plate has a supporting part whose upper surface is to adhere to and support the entire bottom surface of the wafer lower except a polymer formation region, and a stepped part above which hangs an outer peripheral portion of the wafer that includes the polymer formation region. Accordingly, ashing gas injected into the process chamber of the ashing equipment flows into an opening defined between the upper surface of the stepped part of the chuck plate and the polymer formation region of the wafer and reacts with the polymer. As a result, the photoresist and the polymer are simultaneously eliminated. Thus, the ashing equipment and the wafer require little time to clean after the etching process.

Abstract: An ashing apparatus for semiconductor wafers includes a reaction chamber, a plasma quartz that generates plasma ions, an ion ejector provided at a side wall of the reaction chamber and through which the plasma ions are ejected into the reaction chamber, a chamber upper cover of quartz through which light radiated from a halogen lamp is transmitted for ashing a wafer by heat of the light, and a distribution pipe coupled to the ion ejector and disposed within the reaction chamber that directly sprays the ions ejected from the ion ejector onto the wafer. The distribution pipe has a plurality of ejection holes formed along a circumference thereof and through which the plasma ions are ejected toward and uniformly sprayed on the wafer.

Abstract: A chuck plate of ashing equipment for fabricating a semiconductor device facilitates the removal of polymer from the lower surface of a wafer while photoresist is being removed from the upper surface of the wafer by etching. The chuck plate has a supporting part whose upper surface is to adhere to and support the entire bottom surface of the wafer lower except a polymer formation region, and a stepped part above which hangs an outer peripheral portion of the wafer that includes the polymer formation region. Accordingly, ashing gas injected into the process chamber of the ashing equipment flows into an opening defined between the upper surface of the stepped part of the chuck plate and the polymer formation region of the wafer and reacts with the polymer. As a result, the photoresist and the polymer are simultaneously eliminated. Thus, the ashing equipment and the wafer require little time to clean after the etching process.