Patents by Inventor Min Paek
Min Paek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961742Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.Type: GrantFiled: August 23, 2021Date of Patent: April 16, 2024Assignee: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.Inventors: Jong Sik Paek, Doo Hyun Park, Seong Min Seo, Sung Geun Kang, Yong Song, Wang Gu Lee, Eun Young Lee, Seo Yeon Ahn, Pil Je Sung
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Publication number: 20190189470Abstract: A wafer cleaning apparatus includes a wafer roller to rotate a wafer in a first direction, first and second roller brushes disposed to be parallel to each other, the first and second roller brushes to be brought into contact with opposing surfaces of the wafer to clean the opposing surfaces of the wafer, respectively, while rotating in mutually opposing directions, first and second pipes having a longitudinal direction parallel to each other, the first and second pipes being above the first and second roller brushes and conveying a cleaning liquid for cleaning the wafer, first and second nozzle groups disposed along the longitudinal direction of the pipes, respectively, and including a plurality of nozzles to spray the cleaning liquid onto the opposing surfaces of the wafer at a predetermined angle, respectively, and a binding part connecting the first and second pipes to restrain movement of the first and second pipes.Type: ApplicationFiled: July 19, 2018Publication date: June 20, 2019Inventors: Jong Myung PARK, Dong Woo LEE, Jin Hong LEE, Young Seok JUNG, Kang Min PAEK
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Patent number: 9620392Abstract: An apparatus for drying a substrate may include a spin chuck, a drying chamber and a drying fluid line. The spin chuck may be configured to support the substrate. The spin chuck may rotate the substrate. The drying chamber may be configured to receive the spin chuck. The drying chamber may have an inlet, an outlet and a vortex exhaust. A drying fluid may be supplied through the inlet into the drying chamber. The drying fluid may be drained through the outlet. A vortex of the drying fluid may be drained through the vortex exhaust. The drying fluid line may be connected to the inlet.Type: GrantFiled: March 15, 2013Date of Patent: April 11, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong-Soo Kim, Jae-Phil Boo, Kang-Min Paek, Keon-Sik Seo, Jae-Hoon Choi
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Patent number: 9471737Abstract: A method of designing a semiconductor device is provided. The method includes a step of defining a dummy structure area on the floorplan layout of the semiconductor device. The method also includes a step of adding dummy cells to the dummy structure area. Each dummy cell may be associated with a different data type. The method may improve a design optimization process of dummy cells on the semiconductor device layout by automating the removal process of dummy cells to optimize dummy density. Apart from that, semiconductor devices that are manufactured using the described method, and an apparatus to perform the steps described in the method are also described.Type: GrantFiled: December 5, 2014Date of Patent: October 18, 2016Assignee: Altera CorporationInventors: Min Paek, Nor Razman Md Zin
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Publication number: 20140000661Abstract: An apparatus for drying a substrate may include a spin chuck, a drying chamber and a drying fluid line. The spin chuck may be configured to support the substrate. The spin chuck may rotate the substrate. The drying chamber may be configured to receive the spin chuck. The drying chamber may have an inlet, an outlet and a vortex exhaust. A drying fluid may be supplied through the inlet into the drying chamber. The drying fluid may be drained through the outlet. A vortex of the drying fluid may be drained through the vortex exhaust The drying fluid line may be connected to the inlet.Type: ApplicationFiled: March 15, 2013Publication date: January 2, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong-Soo Kim, Jae-Phil Boo, Kang-Min Paek, Keon-Sik Seo, Jae-Hoon Choi
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Publication number: 20110255212Abstract: The invention describes nanocomposites containing carbon nanotubes (CNTs), methods of making the nanocomposites and devices using the nanocomposite materials. Combining CNTs with capacitor materials such as VN provides composite materials having unique supercapacitor properties.Type: ApplicationFiled: August 31, 2007Publication date: October 20, 2011Applicant: BATTELLE MEMORIAL INSTITUTEInventors: Tao Liu, Bhima R. Vijayendran, Abhihek Gupta, Seung Min Paek
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Patent number: 7259071Abstract: A method for making a semiconductor device having a first active region and a second active region includes providing first and second isolation structures defining the first active region on a substrate. The first active region uses a first operational voltage, and the second active region uses a second operational voltage that is different from the first voltage. A nitride layer overlying the first and second active regions is formed. An oxide layer overlying the nitride layer is formed. A first portion of the oxide layer overlying the first active region is removed to expose a first portion of the nitride layer. The exposed first portion of the nitride layer is removed using a wet etch method while leaving a second portion of the nitride layer that is overlying the second active region intact.Type: GrantFiled: October 25, 2004Date of Patent: August 21, 2007Assignee: SilTerra Malaysia Sdn.Bhd.Inventors: Inki Kim, Sang Yeon Kim, Min Paek, Chiew Sin Ping, Wan Gie Lee, Choong Shiau Chien, Zadig Lam, Hitomi Watanabe, Naoto Inoue
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Patent number: 7241665Abstract: A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.Type: GrantFiled: July 12, 2006Date of Patent: July 10, 2007Assignee: SilTerra Malaysia Sdn. Bhd.Inventors: Inki Kim, Sang Yeon Kim, Min Paek, Ch'ng Toh Ghee, Ramakrishnan Rajagopal, Chiew Sin Ping, Wan Gie Lee, Choong Shiau Chien, Charlie Tay, Chang Gi Lee, Hitomi Watanabe, Naoto Inoue
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Patent number: 7208378Abstract: A method of manufacturing a semiconductor device includes defining a first voltage region, a second voltage region, and a third voltage region on a substrate. The first, second, and third voltage regions are configured to handle first, second, and third voltage levels, respectively, that are different from each other. A nitride layer overlying the first, second, and third voltage regions are formed. An oxide layer overlying the nitride layer is formed. The oxide layer is patterned to expose a portion of the nitride layer overlying the first voltage region. The exposed portion of the nitride layer is removed using a wet etch process. A first gate oxide layer overlying the first voltage region is formed. Portions of the oxide layer and the nitride layer overlying the second and third voltage regions are removed. Impurities are selectively implanted into the third voltage region while preventing the impurities from being provided in the second voltage region.Type: GrantFiled: May 10, 2005Date of Patent: April 24, 2007Assignee: SilterraInventors: Inki Kim, Sang Yeon Kim, Min Paek, Ong Boon Teong, Oh Choong Young, Ng Chun Leng, Joung Joon Ho
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Patent number: 7166901Abstract: A semiconductor device comprises a semiconductor substrate having a high voltage region and a low voltage region, at least a pair of adjacent high voltage MOS transistors disposed on the high voltage region of the semiconductor substrate, and low voltage MOS transistors disposed on the low voltage region of the semiconductor substrate. A first element isolator comprises a first shallow trench disposed on a surface of the low voltage, region of the semiconductor substrate, and a first dielectric embedded in the first shallow trench. A pair of second element isolators comprises two second shallow trenches spaced apart at an interval between a source region or a drain region of the pair of the adjacent high voltage MOS transistors and a source or a drain region of the other of the pair of the adjacent high voltage MOS transistors, and a second dielectric embedded in each of the second shallow trenches.Type: GrantFiled: September 27, 2004Date of Patent: January 23, 2007Assignees: Seiko Instruments Inc., Silterra Malaysia Sdh. BhdInventors: Naoto Inoue, Hitomi Sakurai, Min Paek, Sang Yeon Kim, In Ki Kim
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Publication number: 20060258116Abstract: A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.Type: ApplicationFiled: July 12, 2006Publication date: November 16, 2006Applicant: SilTerra Malaysia Sdn. Bhd.Inventors: Inki Kim, Sang Kim, Min Paek, Ch'ng Toh Ghee, Ramakrishnan Rajagopal, Chiew Ping, Wan Lee, Choong Chien, Charlie Tay, Chang Lee, Hitomi Watanabe, Naoto Inoue
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Patent number: 7091104Abstract: A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.Type: GrantFiled: January 23, 2003Date of Patent: August 15, 2006Assignee: SilTerra Malaysia Sdn. Bhd.Inventors: Inki Kim, Sang Yeon Kim, Min Paek, Ch'ng Toh Ghee, Ramakrishnan Rajagopal, Chiew Gie Lee, Wan Gie Lee, Choong Shiau Chien, Charlie Tay, Chang Gi Lee, Hitomi Watanabe, Naoto Inoue
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Publication number: 20050287745Abstract: A method of manufacturing a semiconductor device includes defining a first voltage region, a second voltage region, and a third voltage region on a substrate. The first, second, and third voltage regions are configured to handle first, second, and third voltage levels, respectively, that are different from each other. A nitride layer overlying the first, second, and third voltage regions are formed. An oxide layer overlying the nitride layer is formed. The oxide layer is patterned to expose a portion of the nitride layer overlying the first voltage region. The exposed portion of the nitride layer is removed using a wet etch process. A first gate oxide layer overlying the first voltage region is formed. Portions of the oxide layer and the nitride layer overlying the second and third voltage regions are removed. Impurities are selectively implanted into the third voltage region while preventing the impurities from being provided in the second voltage region.Type: ApplicationFiled: May 10, 2005Publication date: December 29, 2005Applicant: SilTerra Malaysia Sdn. Bhd.Inventors: Inki Kim, Sang Kim, Min Paek, Ong Teong, Oh Young, Ng Leng, Joung Ho
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Publication number: 20050116265Abstract: In a semiconductor device in which high voltage MOS transistors and low voltage MOS transistors are mixedly mounted, a process is simplified and miniaturization thereof is achieved, without causing a parasitic transistor operation. An active region doped with a low impurity concentration of an impurity is formed in a channel region of a parasitic MOS transistor between two STI (shallow trench isolation) regions, and current flow between a source and a drain of the parasitic MOS transistor is cut off in a semiconductor device in which a high voltage MOS transistor and a microscopic low voltage MOS transistor are mixedly mounted on the same semiconductor substrate.Type: ApplicationFiled: September 27, 2004Publication date: June 2, 2005Inventors: Naoto Inoue, Hitomi Sakurai, Min Paek, Sang Kim, In Kim
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Patent number: 6890822Abstract: A method of manufacturing a semiconductor device includes defining a first voltage region, a second voltage region, and a third voltage region on a substrate. The first, second, and third voltage regions are configured to handle first, second, and third voltage levels, respectively, that are different from each other. A nitride layer overlying the first, second, and third voltage regions are formed. An oxide layer overlying the nitride layer is formed. The oxide layer is patterned to expose a portion of the nitride layer overlying the first voltage region. The exposed portion of the nitride layer is removed using a wet etch process. A first gate oxide layer overlying the first voltage region is formed. Portions of the oxide layer and the nitride layer overlying the second and third voltage regions are removed. Impurities are selectively implanted into the third voltage region while preventing the impurities from being provided in the second voltage region.Type: GrantFiled: February 13, 2003Date of Patent: May 10, 2005Assignee: SilTerra Malaysia Sdn. Bhd.Inventors: Inki Kim, Sang Yeon Kim, Min Paek, Ong Boon Teong, Oh Choong Young, Ng Chun Leng, Joung Joon Ho
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Publication number: 20050059215Abstract: A method for making a semiconductor device having a first active region and a second active region includes providing first and second isolation structures defining the first active region on a substrate. The first active region uses a first operational voltage, and the second active region uses a second operational voltage that is different from the first voltage. A nitride layer overlying the first and second active regions is formed. An oxide layer overlying the nitride layer is formed. A first portion of the oxide layer overlying the first active region is removed to expose a first portion of the nitride layer. The exposed first portion of the nitride layer is removed using a wet etch method while leaving a second portion of the nitride layer that is overlying the second active region intact.Type: ApplicationFiled: October 25, 2004Publication date: March 17, 2005Applicant: SilTerra Malaysia Sdn. Bhd.Inventors: Inki Kim, Sang Kim, Min Paek, Chiew Ping, Wan Lee, Choong Chien, Zadig Lam, Hitomi Watanabe, Naoto Inoue
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Patent number: 6818514Abstract: A method for making a semiconductor device having a first active region and a second active region includes providing first and second isolation structures defining the first active region on a substrate. The first active region uses a first operational voltage, and the second active region uses a second operational voltage that is different from the first voltage. A nitride layer overlying the first and second active regions is formed. An oxide layer overlying the nitride layer is formed. A first portion of the oxide layer overlying the first active region is removed to expose a first portion of the nitride layer. The exposed first portion of the nitride layer is removed using a wet etch method while leaving a second portion of the nitride layer that is overlying the second active region intact.Type: GrantFiled: February 26, 2003Date of Patent: November 16, 2004Assignee: SilTerra Malaysia Sdn. Bhd.Inventors: Inki Kim, Sang Yeon Kim, Min Paek, Chiew Sin Ping, Wan Gie Lee, Choong Shiau Chien, Zadig Lam, Hitomi Watanabe, Naoto Inoue
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Publication number: 20040166698Abstract: A method for making a semiconductor device having a first active region and a second active region includes providing first and second isolation structures defining the first active region on a substrate. The first active region uses a first operational voltage, and the second active region uses a second operational voltage that is different from the first voltage. A nitride layer overlying the first and second active regions is formed. An oxide layer overlying the nitride layer is formed. A first portion of the oxide layer overlying the first active region is removed to expose a first portion of the nitride layer. The exposed first portion of the nitride layer is removed using a wet etch method while leaving a second portion of the nitride layer that is overlying the second active region intact.Type: ApplicationFiled: February 26, 2003Publication date: August 26, 2004Applicant: SilTerra Malaysia Sdn. Bhd.Inventors: Inki Kim, Sang Yeon Kim, Min Paek, Chiew Sin Ping, Wan Gie Lee, Choong Shiau Chien, Zadig Lam, Hitomi Watanabe, Naoto Inoue
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Publication number: 20040161897Abstract: A method of manufacturing a semiconductor device includes defining a first voltage region, a second voltage region, and a third voltage region on a substrate. The first, second, and third voltage regions are configured to handle first, second, and third voltage levels, respectively, that are different from each other. A nitride layer overlying the first, second, and third voltage regions are formed. An oxide layer overlying the nitride layer is formed. The oxide layer is patterned to expose a portion of the nitride layer overlying the first voltage region. The exposed portion of the nitride layer is removed using a wet etch process. A first gate oxide layer overlying the first voltage region is formed. Portions of the oxide layer and the nitride layer overlying the second and third voltage regions are removed. Impurities are selectively implanted into the third voltage region while preventing the impurities from being provided in the second voltage region.Type: ApplicationFiled: February 13, 2003Publication date: August 19, 2004Applicant: SilTerra Malaysia Sdn. Bhd.Inventors: Inki Kim, Sang Yeon Kim, Min Paek, Ong Boon Teong, Oh Choong Young, Ng Chun Leng, Joung Joon Ho
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Publication number: 20040147090Abstract: A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.Type: ApplicationFiled: January 23, 2003Publication date: July 29, 2004Applicant: SilTerra Malaysia Sdn. Bhd.Inventors: Inki Kim, Sang Yeon Kim, Min Paek, Ch?apos;ng Toh Ghee, Ramakrishnan Rajagopal, Chiew Sin Pin, Wan Gie Lee, Choong Shiau Chien, Charlie Tay, Chang Gi Lee, Hitomi Watanabe, Naoto Inoue