Abstract: A semiconductor structure and method of manufacturing a semiconductor structure are provided. The semiconductor structure includes a substrate and at least one contact plug. The substrate has an epi-layer. The contact plug is formed on the epi-layer and includes a silicide cap disposed on the epi-layer; a conductive pillar disposed on the silicide cap such that the conductive pillar electrically connects to the epi-layer via the silicide cap; and a hybrid liner. The hybrid liner surrounds the conductive pillar and includes a lower portion abutting the silicide cap and having a nitride material and an upper portion abutting the conductive pillar and having an oxidized nitride material. Due to the hybrid liner, a semiconductor structure with increased capacitance and decreased resistivity can be obtained.

Abstract: A downhole traction system includes a driving system and a downhole wheeled tractor. The driving system is connected with the downhole wheeled tractor; the downhole wheeled tractor comprises a tractor body, a power unit and a plurality of traction units; the plurality of traction units are arranged along the extension direction of the tractor body; each of the traction units comprises a driving arm, a supporting arm, a supporting wheel, a driving assembly and a supporting assembly; the driving arm and the supporting arm are movably connected with the tractor body; and the supporting wheel is connected with the driving arm and the supporting arm. When the supporting assembly drives the supporting arm to extend along the radial direction of the tractor body under the hydraulic drive action of the hydraulic power unit, the supporting wheel can be abutted against the well wall.

Abstract: A Land Grid Array (LGA) interface assembly used to physically interface or connect a semiconductor package (e.g., a semiconductor, a microprocessor, etc.) and a PCB, motherboard, etc. The LGA interface assembly including an LGA socket including a plurality of socket pins arranged and configured to contact a plurality of contact pads on the semiconductor package to enable data transfer. The socket pins including a multi-bend and/or zig-zag configuration arranged and configured to minimize lateral displacement of the socket pin relative to the contact pad during insertion of the semiconductor package into the LGA socket. Other embodiments are described and claimed.

Abstract: A semiconductor device may include one or more transistor structures that include a plurality of source/drain regions and a gate structure between the source/drain regions. The semiconductor device may further include one or more dielectric layers between a source/drain contact structure and a gate structure of the one or more of the transistor structures. The one or more dielectric layers may be manufactured using on oxidation treatment process to tune the dielectric constant of the one or more dielectric layers. The dielectric constant of the one or more dielectric layers may be tuned to reduce the parasitic capacitance between the source/drain contact structure and the gate structure (which are conductive structures). In particular, the dielectric constant of the one or more spacer dielectric may be tuned using the oxidation treatment process to lower the as-deposited dielectric constant of the one or more dielectric layers.

Abstract: Integrated circuit packages with fluid spacers to improve pin load distribution are disclosed. An example apparatus includes an integrated circuit (IC) package, a circuit board, a socket to couple the IC package and the circuit board, a backplate coupled to the circuit board, a loading assembly to provide a stack load to the IC package, and a fluid liner positioned between the circuit board and the backplate.

Abstract: Covers for integrated circuit package sockets are disclosed herein. An example cover for a socket for an integrated circuit package includes a base including a cutout, the cutout to engage a pin associated with the socket, engagement of the cutout and the pin to maintain a position of the cover relative to the socket; and a handle to facilitate positioning of the cover to move the cutout into engagement with the pin.

Abstract: A low level contact resistance (LLCR) testing apparatus comprises a test board, an interface board, and a patch board. The test board comprises a processor socket. The interface board connects to both the test board and the patch board. The patch board connects to a contact resistance tester. An LLCR system comprising the LLCR testing apparatus and a contact resistance tester can be portable. The test board can accommodate thermal management solutions of varying sizes and types. Different test board designs can accommodate different socket-processor configurations and the different test boards can be easily accommodated by an LLCR testing apparatus due to its modular design.

Abstract: Warpage reduction through laminate glass cloth design modification is described herein. In one example, a substrate for a microelectronic assembly, includes one or more glass-cloth containing layers. At least one of the glass-cloth containing layers includes a glass cloth having a weave including: a first plurality of parallel glass fibers, a second plurality of parallel glass fibers, and a third plurality of parallel glass fibers interwoven with one another in a plane. The second plurality of parallel glass fibers crosses the first plurality of glass fibers at a first angle, and the third plurality of parallel glass fibers crosses the first plurality of glass fibers at a second angle and crosses the second plurality of glass fibers at a third angle. In one example, the glass cloth weave includes a hexagonal pattern.

Abstract: Methods, apparatus, systems, and articles of manufacture to improve pin contact are disclosed. An apparatus disclosed herein includes a back plate, a circuit board disposed between the back plate and a socket, and a spring sheet disposed between the back plate and the circuit board.

Abstract: Devices and methods are shown that use sensors to detect physical characteristics of an IC circuit or other device over time. The physical characteristics and time data may be used to calculate a damage metric of the IC circuit or other device. The damage metric may be used to notify a user about a condition of the IC circuit or other device.

Abstract: Attachment structures for electrically coupling a microelectronic package to a microelectronic board/interposer including joint pads formed on the microelectronic board/interposer which provide a gap between respective openings in a solder resist layer of the microelectronic substrate and each of the joint pads. Such attachment structures may reduce or substantially eliminate contact between a solder interconnect and a solder resist layer of the microelectronic board/interposer, which may, in turn, reduce or substantially eliminate the potential of crack initiation and propagation at contact areas between the solder interconnect and a solder resist layer of the microelectronic board/interposer due to stresses induced by a mismatch of thermal expansion between the microelectronic package and the microelectronic board/interposer during thermal cycling.