Abstract: A learning system deploys, to one or more client devices, modules to be deployed in a learning environment of a respective client node. The learning environment of a respective client node may include modules for the client device (or client node) to collaborate with the central learning system and other client nodes via a distributed learning (e.g., federated learning, split learning) framework. In one embodiment, the learning system deploys an interoperable distributed learning environment for training a neural network encoder which can be used in heterogenous datasets to transform the heterogenous datasets across different institutions or entities into a common latent feature space. After training, the learning system receives data instances including a set of features and labels from different client nodes and trains a task neural network model configured to receive features in the latent space and generate an estimated label from the received data instances.

Abstract: Provided are methods of surface treatment, semiconductor devices and methods of forming the semiconductor device. The methods of forming the semiconductor device include forming a first oxide layer and a second oxide layer on a substrate. The first and second oxide layers are patterned to form a contact hole exposing the substrate. A sidewall of the first oxide layer exposed by the contact hole reacts with HF to form a first reaction layer and a sidewall of the second oxide layer exposed by the contact hole reacts with NH3 and HF to form a second reaction layer. The first and second reaction layers are removed to enlarge the contact hole. A contact plug is formed in the enlarged contact hole.

Abstract: Provided are methods of surface treatment, semiconductor devices and methods of forming the semiconductor device. The methods of forming the semiconductor device include forming a first oxide layer and a second oxide layer on a substrate. The first and second oxide layers are patterned to form a contact hole exposing the substrate. A sidewall of the first oxide layer exposed by the contact hole reacts with HF to form a first reaction layer and a sidewall of the second oxide layer exposed by the contact hole reacts with NH3 and HF to form a second reaction layer. The first and second reaction layers are removed to enlarge the contact hole. A contact plug is formed in the enlarged contact hole.

Abstract: Embodiments of the invention provide a semiconductor wafer cleaning apparatus and a related method. In one embodiment, the invention provides a semiconductor wafer cleaning apparatus comprising a wafer stage adapted to support a wafer; a first cleaning unit adapted to spray a first cleaning solution onto the wafer to remove particles from the wafer, wherein the first cleaning solution prevents static electricity from being generated on the surface of the wafer; and a second cleaning unit adapted to provide a second cleaning solution onto the wafer and oscillate a quartz rod to remove particles from the wafer, wherein the second cleaning solution makes a surface of the wafer hydrophilic.

Abstract: Aqueous cleaning compositions comprise from about 0.01 to about 10 weight percent of hydrogen fluoride; from about 1 to about 10 weight percent of hydrogen peroxide; and from about 0.01 to about 30 weight percent of isopropyl alcohol. Methods of manufacturing microelectronic devices comprise providing electrodes on insulation films on microelectronic substrates; etching the insulation films using the electrodes as etching masks to form an exposed surfaces on the electrodes; cleaning the exposed surfaces with aqueous cleaning compositions comprising from about 0.01 to about 10 weight percent of hydrogen fluoride; from about 1 to about 10 weight percent of hydrogen peroxide; and from about 0.01 to about 30 weight percent of isopropyl alcohol; and forming dielectric films on the exposed surfaces of the electrodes. The cleaning step and the etching step are carried out simultaneously.

Abstract: A wet station apparatus used for cleaning and wet etching a semiconductor wafer includes a chemical container for holding a chemical solution, a temperature measuring device for measuring a temperature of the chemical solution, a temperature control unit for comparing the temperature measured by the temperature measuring device with a predetermined reference temperature value, and outputting the result as a control signal, a quartz heater for heating the chemical solution, a power supply controller for receiving the control signal and adjusting the power supplied to the quartz heater, and a power switch connected to the power supply controller, for receiving a heating initiation signal and switching power to the quartz heater, wherein a heater monitoring system is further provided for monitoring the operating states of the quartz heater and the power supply controller and notifying an operator of any problems.

Abstract: A wet station apparatus used for cleaning and wet etching a semiconductor wafer includes a chemical container for holding a chemical solution, a temperature measuring device for measuring a temperature of the chemical solution, a temperature control unit for comparing the temperature measured by the temperature measuring device with a predetermined reference temperature value, and outputting the result as a control signal, a quartz heater for heating the chemical solution, a power supply controller for receiving the control signal and adjusting the power supplied to the quartz heater, and a power switch connected to the power supply controller, for receiving a heating initiation signal and switching power to the quartz heater, wherein a heater monitoring system is further provided for monitoring the operating states of the quartz heater and the power supply controller and notifying an operator of any problems.