Abstract: Provided are an electrolyte for a rechargeable lithium battery including a non-aqueous organic solvent, a lithium salt, and an additive, wherein the additive is a composition including a first compound and a second compound, the first compound is a cesium salt compound, and the second compound represented by Chemical Formula 1, and a rechargeable lithium battery including the same. Details of Chemical Formula 1 are as described in the specification.

Abstract: Disclosed are an electrolyte for a rechargeable lithium battery and a rechargeable lithium battery including the same, the electrolyte including a non-aqueous organic solvent, a lithium salt, and an additive, wherein the additive is a composition including a first compound and a second compound, the first compound is a cesium salt compound, and the second compound is represented by Chemical Formula 1. Details of Chemical Formula 1 are as described in the specification.

Abstract: Provided are an electrolyte for a rechargeable lithium battery and a rechargeable lithium battery including the same, the electrolyte including a non-aqueous organic solvent, a lithium salt, and an additive, wherein the additive is a composition including a first compound and a second compound, the first compound is a cesium salt compound, and the second compound includes a composition including a second compound represented by Chemical Formula 1 or Chemical Formula 2. Details of the Chemical Formula 1 and Chemical Formula 2 are as described in the specification.

Abstract: A thin-film transistor comprises an annealed layer comprising crystalline zinc oxide. A passivation layer is adjacent to the thin-film transistor. The passivation layer has a thickness and material composition such that when a dose of radiation from a radiation source irradiates the thin-film transistor, a portion of the dose that includes an approximate maximum concentration of the dose is located within the annealed layer. The annealed layer has a thickness and threshold displacement energies after it has been annealed such that: a) a difference between a transfer characteristic value of the thin-film transistor before and after the dose is less than a first threshold; and b) a difference between a transistor output characteristic value of the thin-film before and after the dose is less than a second threshold. The thresholds are based on a desired performance of the thin-film transistor.

Abstract: A thin-film transistor comprises an annealed layer comprising crystalline zinc oxide. A passivation layer is adjacent to the thin-film transistor. The passivation layer has a thickness and material composition such that when a dose of radiation from a radiation source irradiates the thin-film transistor, a portion of the dose that includes an approximate maximum concentration of the dose is located within the annealed layer. The annealed layer has a thickness and threshold displacement energies after it has been annealed such that: a) a difference between a transfer characteristic value of the thin-film transistor before and after the dose is less than a first threshold; and b) a difference between a transistor output characteristic value of the thin-film before and after the dose is less than a second threshold. The thresholds are based on a desired performance of the thin-film transistor.

Abstract: A thin-film transistor comprises an annealed layer comprising crystalline zinc oxide. A passivation layer is adjacent to the thin-film transistor. The passivation layer has a thickness and material composition such that when a dose of radiation from a radiation source irradiates the thin-film transistor, a portion of the dose that includes an approximate maximum concentration of the dose is located within the annealed layer. The annealed layer has a thickness and threshold displacement energies after it has been annealed such that: a) a difference between a transfer characteristic value of the thin-film transistor before and after the dose is less than a first threshold; and b) a difference between a transistor output characteristic value of the thin-film before and after the dose is less than a second threshold. The thresholds are based on a desired performance of the thin-film transistor.

Abstract: A thin-film transistor comprises an annealed layer comprising crystalline zinc oxide. A passivation layer is adjacent to the thin-film transistor. The passivation layer has a thickness and material composition such that when a dose of radiation from a radiation source irradiates the thin-film transistor, a portion of the dose that includes an approximate maximum concentration of the dose is located within the annealed layer. The annealed layer has a thickness and threshold displacement energies after it has been annealed such that: a) a difference between a transfer characteristic value of the thin-film transistor before and after the dose is less than a first threshold; and b) a difference between a transistor output characteristic value of the thin-film before and after the dose is less than a second threshold. The thresholds are based on a desired performance of the thin-film transistor.

Abstract: A thin-film transistor comprises an annealed layer comprising crystalline zinc oxide. A passivation layer is adjacent to the thin-film transistor. The passivation layer has a thickness and material composition such that when a dose of radiation from a radiation source irradiates the thin-film transistor, a portion of the dose that includes an approximate maximum concentration of the dose is located within the annealed layer. The annealed layer has a thickness and threshold displacement energies after it has been annealed such that: a) a difference between a transfer characteristic value of the thin-film transistor before and after the dose is less than a first threshold; and b) a difference between a transistor output characteristic value of the thin-film before and after the dose is less than a second threshold. The thresholds are based on a desired performance of the thin-film transistor.

Abstract: Provided are systems and methods for processing a genome sequence by adjusting seed length. Exemplary systems for processing a genome sequence may include a seed extractor configured to extract a seed from a target sequence; and an index generator configured to index the seed extracted from the seed extractor. In some embodiments, the length of the seed extracted is adjusted based on the number of seeds extracted from the target sequence that have the same nucleotide sequence.

Abstract: Provided are systems and methods for processing a reference sequence. Exemplary systems for processing a reference sequence may include a seed extractor configured to extract a seed from a reference sequence; a determiner configured to determine whether an unidentified base is present or absent in a seed extracted by the seed extractor; and an index generator configured to add a seed to an index when unidentified bases are absent from an extracted seed.

Abstract: A system and method for efficiently managing a vast amount of read data and genetic information obtained from sequencing data are provided. The system includes a parsing unit reading the read data and converting the read data into a table-embedded index, a table management unit classifying the table-embedded index into a master table which contains basic items about the genetic information and a slave table which contains additional items about the genetic information and managing the master table and the slave table, a search unit retrieving data from the master table and/or the slave table and outputting the retrieved data.

Abstract: There are provided a sequence aligning device in consideration of accuracy, and a method thereof. The sequence aligning apparatus of an embodiment of the present disclosure includes a seed extracting unit configured to extract at least one seed that is exactly matched to a reference sequence from a read; a mapping score calculating unit configured to, with respect to each of the at least one extracted seed, map a left area and a right area of the read to the reference sequence based on the seed at each mapping position of the reference sequence of each seed, and calculate a left mapping score and a right mapping score of each mapping position from the mapping result; and a read aligning unit configured to determine a mapping position in each reference sequence of the at least one seed using the calculated left mapping score and right mapping score.

Abstract: A cooperation-based method and system of managing, displaying, and updating DNA sequence data including receiving annotation data inputted by a user for an anchor corresponding to at least one base of a DNA sequence, and storing the received annotation data in an annotation data table which includes one or more columns for annotation data; receiving data about a position of an anchor which corresponds to at least one base of a DNA sequence in the DNA sequence, and displaying the position of the anchor on a DNA sequence map based on the received data; and getting input of a position at which an annotation is to be input on a DNA sequence map, displaying an annotation input interface which includes an edit region for inputting an annotation, and transmitting annotation data including annotation contents inputted through the edit region and the inputted position to a DNA sequence data storage device.

Abstract: Provided are a system and/or apparatus, and a method, for aligning a genome sequence. The system and/or apparatus includes a corrector configured to correct quality of input reads, a seed generator configured to generate one or more seeds from the corrected reads, and an aligner configured to perform a global alignment operation of the corrected reads in a reference sequence using the generated seeds.

Abstract: There are provided an apparatus for recombining genome sequence in consideration of a read length, and a method thereof. An exemplary embodiment of the sequence recombination apparatus includes a seed length calculating unit configured to calculate a seed length based on a read length of an input read, a seed generating unit configured to generate at least one seed having the seed length from the read, and an alignment unit configured to perform global alignment operation on a reference sequence of the read using the generated seed.

Abstract: A system and a method for aligning a genome sequence considering repeats are provided. The system for aligning a genome sequence includes a fragment sequence production unit configured to produce a plurality of fragment sequences from a read, a fragment sequence length adjustment unit configured to select the fragment sequences whose mapping repeat numbers in a target sequence exceed a predetermined reference value from the plurality of produced fragment sequences and adjust lengths of the selected fragment sequences until the mapping repeat numbers of the selected fragment sequences reach a value equal to or less than the reference value, and an alignment unit configured to perform global alignment using the fragment sequences having the adjusted lengths.

Abstract: A system and a method for aligning a genome sequence are provided. The system for aligning a genome sequence includes a fragment sequence production unit configured to produce a plurality of fragment sequences from a read, a filtering unit configured to constitute a candidate fragment sequence group including only the fragment sequences mapped to a reference sequence among the plurality of produced fragment sequences, a mapping number calculation unit configured to divide the reference sequence into a plurality of sections and calculate total mapping numbers of the candidate fragment sequences for the sections, and an alignment unit configured to select the sections in which the calculated total mapping numbers are greater than or equal to a reference number and perform global alignment on the read with respect to the selected sections.

Abstract: A system and a method for aligning a genome sequence considering an entire read are provided. The system for aligning a genome sequence includes a fragment sequence production unit configured to produce one or more fragment sequences from an entire section of a read sequence, and an alignment unit configured to perform global alignment on the read sequence using the produced fragment sequences.

Abstract: A system and a method for aligning a first and second genome sequences in a reference sequence includes a seed generation unit configured to generate one or more fragments from each of the first sequence and the second sequence and constitute a first seed group and a second seed group from the one or more fragments, a mapping value calculation unit configured to divide the reference sequence into a plurality of sections, and calculate a first mapping value of seeds included in the first seed group and a second mapping value of seeds included in the second seed group for each section, and an alignment unit configured to select a first section in which both the first and second mapping values are greater than or equal to a reference value and search for mapping positions of the first sequence and the second sequence in the first section.

Abstract: A system and a method for aligning genome sequence are provided. The system for aligning genome sequence includes a mapping position calculation unit configured to select one of a plurality of seeds produced from a read and calculate a mapping position of the selected seed in a target sequence, and a global alignment unit configured to calculate a repeat judgment region for the selected seed from the calculated mapping position, determine whether global alignment is pre-performed in the calculated repeat judgment region and perform global alignment the selected read at the calculated mapping position when the global alignment is not pre-performed.