Abstract: Charge migration in a SONOS memory cell is eliminated by physically separating nitride layer storage sites with dielectric material. Increased storage in a cell is realized with a double gate structure for controlling bit storage in line channels between a source and a drain, such as with a FinFET structure in which the gates are folded over the channels on sides of a fin.

Abstract: In a non-volatile semiconductor memory device including a source region separated from a drain region by a channel region and with an electrically floating gate electrode spaced from and overlying the channel region, a flexible member is spaced from the floating gate and capable of being flexed towards the floating gate for depositing or removing electrical charge on the floating gate in response to a voltage potential between the flexible member and the channel region. In one embodiment, the flexible member comprises a contact gate electrode. In another embodiment, only a single gate electrode is employed without a separate floating gate.

Abstract: An electronic device includes a main body having a connection portion for electrically connecting the electronic device to an external device; a sheath for the main body to be slidably received therein; at least one positioning component provided in the sheath, for fixing the main body when the main body is sliding toward a first terminal of the sheath and arrives at a fixing position such that the connection portion is protruded from a first opening formed at the first terminal in order to use the electronic device; and at least one first elastic component provided in the sheath, for pressing the main body to move toward a second terminal of the sheath when the main body is released from the fixing position and is sliding toward the first terminal of the sheath, such that the connection portion is received in the sheath in order to store the electronic device.

Abstract: An electronic device includes a main body having a connection portion for electrically connecting the electronic device to an external device; a sheath for the main body to be slidably received therein; at least one positioning component provided in the sheath, for fixing the main body when the main body is sliding toward a first terminal of the sheath and arrives at a fixing position such that the connection portion is protruded from a first opening formed at the first terminal in order to use the electronic device; and at least one first elastic component provided in the sheath, for pressing the main body to move toward a second terminal of the sheath when the main body is released from the fixing position and is sliding toward the first terminal of the sheath, such that the connection portion is received in the sheath in order to store the electronic device.

Abstract: Charge migration in a SONOS memory cell is eliminated by physically separating nitride layer storage sites with dielectric material. Increased storage in a cell is realized with a double gate structure for controlling bit storage in line channels between a source and a drain, such as with a FinFET structure in which the gates are folded over the channels on sides of a fin.

Abstract: Disclosed is a novel flash memory device using a high-permittivity dielectric such as HfO2 or TiO2 as a charge trapping layer. Numerical simulation shows that the novel trapping material will enhance the retention time/programming speed ratio by 5 orders of magnitude, compared to the conventional Si3N4 trapping layer. Capacitors with HfO2 deposited by RTCVD as the charge trap/storage layer in SONOS-type flash memory devices were fabricated and characterized. Compared against devices with Si3N4 trapping layer, faster programming speed as well as good retention time is achieved with low programming voltage.

Abstract: An apparatus for remotely monitoring the level of lubricant in a sump of an internal combustion engine on a vehicle and remotely transferring lubricant from the engine sump including a lubricant tank mounted on the vehicle external to the vehicle's engine. The lubricant tank and the engine may each contain a quantity of gas above the respective lubricant levels in the tank and the sump with the pressure of gas contained in the lubricant tank being regulated relative to the pressure of gas contained in the engine such that the level of lubricant in the tank is indicative of and varies along with the level of lubricant in the engine sump. The apparatus may include an equalization connection between the sump and the tank and an evacuation connection to the tank for transferring lubricant from the tank. The tank may include a plurality of internal chambers situated for lubricant to flow between them to prevent lubricant from being drawn out of the sump below a lubricant low-level limit of the sump.