Patents by Inventor Min-Shin WU

Min-Shin WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190244660
    Abstract: Memories with symmetric read current profiles are provided. A memory includes a first memory array formed by a plurality of memory cells, a second memory array formed by a plurality of memory cells, and a read circuit. The read circuit includes an output buffer. The output buffer is configured to simultaneously obtain first data from the first memory array and second data from the second memory array according a first address signal, and selectively provide the first data or the second data as an output according to a control signal. Binary representation of the first data is complementary to that of the second data.
    Type: Application
    Filed: April 22, 2019
    Publication date: August 8, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yuhsiang CHEN, Shao-Yu CHOU, Chun-Hao CHANG, Min-Shin WU, Yu-Der CHIH
  • Patent number: 10269420
    Abstract: Memories with symmetric read current profiles are provided. A memory includes a first memory array formed by a plurality of memory cells, a second memory array formed by a plurality of memory cells, and a read circuit. The read circuit includes a first decoder coupled to the first memory array, a second decoder coupled to the second memory array, and an output buffer. The first decoder obtains first data from the first memory array according a first address signal. The second decoder obtains second data from the second memory array according the first address signal. The output buffer selectively provides the first data or the second data as an output according to a control signal. The first data is complementary to the second data.
    Type: Grant
    Filed: June 9, 2017
    Date of Patent: April 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yuhsiang Chen, Shao-Yu Chou, Chun-Hao Chang, Min-Shin Wu, Yu-Der Chih
  • Publication number: 20180166131
    Abstract: Memories with symmetric read current profiles are provided. A memory includes a first memory array formed by a plurality of memory cells, a second memory array formed by a plurality of memory cells, and a read circuit. The read circuit includes a first decoder coupled to the first memory array, a second decoder coupled to the second memory array, and an output buffer. The first decoder obtains first data from the first memory array according a first address signal. The second decoder obtains second data from the second memory array according the first address signal. The output buffer selectively provides the first data or the second data as an output according to a control signal. The first data is complementary to the second data.
    Type: Application
    Filed: June 9, 2017
    Publication date: June 14, 2018
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yuhsiang CHEN, Shao-Yu CHOU, Chun-Hao CHANG, Min-Shin WU, Yu-Der CHIH