Abstract: A photonic crystal device includes a two-dimensional crystal including a gain medium and having a first photonic crystal resonator and a second photonic crystal resonator spaced apart from each other and a graphene layer disposed to cover a portion of the first photonic crystal resonator and not to cover the second photonic crystal resonator.

Abstract: A photoelectric semiconductor nanowire device and a method for manufacturing the same. The photoelectric semiconductor nanowire device includes a semiconductor nanowire doped with a dopant of a first conductivity type and including crystal semiconductor segments which include at least one porous semiconductor segment and are connected to opposite ends of the porous semiconductor segment. A first electrode and a second electrode respectively are disposed in the crystal semiconductor segments around the porous semiconductor segment to provide an electrical connection. The crystal semiconductor segment includes a crystal semiconductor, and the porous semiconductor segment includes a porous semiconductor. The semiconductor nanowire provides a current according to the intensity of an external light when the external light is irradiated to the porous semiconductor segment.

Abstract: A photoelectric semiconductor nanowire device and a method for manufacturing the same. The photoelectric semiconductor nanowire device includes a semiconductor nanowire doped with a dopant of a first conductivity type and including crystal semiconductor segments which include at least one porous semiconductor segment and are connected to opposite ends of the porous semiconductor segment. A first electrode and a second electrode respectively are disposed in the crystal semiconductor segments around the porous semiconductor segment to provide an electrical connection. The crystal semiconductor segment includes a crystal semiconductor, and the porous semiconductor segment includes a porous semiconductor. The semiconductor nanowire provides a current according to the intensity of an external light when the external light is irradiated to the porous semiconductor segment.

Abstract: A photonic crystal device includes a two-dimensional crystal including a gain medium and having a first photonic crystal resonator and a second photonic crystal resonator spaced apart from each other and a graphene layer disposed to cover a portion of the first photonic crystal resonator and not to cover the second photonic crystal resonator.

Abstract: The present invention pertains to an inside diameter-adjustable ring in which the inside diameter of the ring is adjustable, and more specifically, to an inside diameter-adjustable ring which comprises: an outside ring which has coupling grooves formed along the inner surface thereof; and an inside ring which is inserted into said coupling grooves and forms the inside diameter of the ring, wherein: separation prevention ridges are formed in the coupling grooves of said outside ring in order to prevent the inserted inside ring from being taken out; a curved portion which is bent to the inner side is formed along the outer surface of said inside ring, so that an air gap is formed on the inner side by the curved portion when said inside ring is inserted into the coupling grooves; a plurality of holes are formed on said inside ring; minerals which emit anions and far-infrared radiation are contained in said inside ring, and embossed parts are formed on the inner surface of said inside ring such that a consumer is