Patents by Inventor Min-Soo Youm

Min-Soo Youm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase-change RAM containing AIN thermal dissipation layer and TiN electrode
    Patent number: 7307269
    Abstract: Provided is a phase-change RAM containing a substrate, a lower electrode, a phase-change material, an upper electrode and a thermal dissipation layer, wherein the thermal dissipation layer contains an aluminum-nitride thermal dissipation layer having a high heat conductivity, and the lower electrode contains a titanium-nitride electrode which generates a great amount of heat generated using a small amount of current and has a low heat conductivity, whereby heat generated between the phase-change material and the electrode is not transferred to the interior of a device but fast dissipated to the exterior thereof, so as to enable a high speed operation using low current and improve reliability of the device.
    Type: Grant
    Filed: November 8, 2005
    Date of Patent: December 11, 2007
    Assignee: Korea Institute of Science and Technology
    Inventors: Seong-Il Kim, Yong-Tae Kim, Young-Hwan Kim, Chun-Keun Kim, Min-Soo Youm
  • Phase-change RAM containing AIN thermal dissipation layer and TiN electrode
    Publication number: 20060133174
    Abstract: Provided is a phase-change RAM containing a substrate, a lower electrode, a phase-change material, an upper electrode and a thermal dissipation layer, wherein the thermal dissipation layer contains an aluminum-nitride thermal dissipation layer having a high heat conductivity, and the lower electrode contains a titanium-nitride electrode which generates a great amount of heat generated using a small amount of current and has a low heat conductivity, whereby heat generated between the phase-change material and the electrode is not transferred to the interior of a device but fast dissipated to the exterior thereof, so as to enable a high speed operation using low current and improve reliability of the device.
    Type: Application
    Filed: November 8, 2005
    Publication date: June 22, 2006
    Applicant: Korea Institute of Science and Technology
    Inventors: Seong-Il Kim, Yong-Tae Kim, Young-Hwan Kim, Chun-Keun Kim, Min-Soo Youm