Abstract: Provided is a one-touch terminal for electric connection of an electric cable to industrial electrical equipment including a lightning arrester. The one-touch terminal includes a metal fitting cap and a biter capable of fastening and electrically connecting any of various electric cables (5 m PDC, etc.) including a lead wire to an upper-electrode-integrated-type coupling socket or to a coupling portion of an upper-electrode-separated-type metal fitting body of a lightning arrester in a one-touch manner. The metal fitting cap, in which a wedge-type biter having an elastic-pressing-type biting/releasing structure is mounted, is detachably mounted to a metal fitting body (or a coupling socket), thereby rapidly and precisely performing electric connection (fastening) of an electric cable (5 m PDC, etc.) to any of various connection metal fittings (a bushing terminal, a terminal clamp, a bus-bar-type terminal board, etc.).

Abstract: Provided is a one-touch terminal for electric connection of an electric cable to industrial electrical equipment including a lightning arrester. The one-touch terminal includes a metal fitting cap and a biter capable of fastening and electrically connecting any of various electric cables (5 m PDC, etc.) including a lead wire to an upper-electrode-integrated-type coupling socket or to a coupling portion of an upper-electrode-separated-type metal fitting body of a lightning arrester in a one-touch manner. The metal fitting cap, in which a wedge-type biter having an elastic-pressing-type biting/releasing structure is mounted, is detachably mounted to a metal fitting body (or a coupling socket), thereby rapidly and precisely performing electric connection (fastening) of an electric cable (5 m PDC, etc.) to any of various connection metal fittings (a bushing terminal, a terminal clamp, a bus-bar-type terminal board, etc.).

Abstract: Methods of forming trench isolation regions include the steps of forming a trench in a semiconductor substrate having a surface thereon and then depositing an electrically insulating layer on the semiconductor substrate, to fill the trench. This depositing step is preferably performed by depositing an electrically insulating layer (e.g., SiO.sub.2) using a plasma chemical vapor. A mask layer is then formed on the electrically insulating layer. According to a preferred aspect of the present invention, the mask layer is planarized using chemical mechanical polishing, for example, to define a mask having openings therein that expose first portions of the electrically insulating layer extending opposite the surface. These first portions are also self-aligned to and extend opposite active portions of the substrate. The exposed portions of the electrically insulating layer are then etched using the mask as an etching mask.

Abstract: Isolation methods for integrated circuits use plasma chemical vapor deposition of an insulating layer followed by lift-off to remove at least portions of the insulating layer. In particular, a lift-off layer is formed on an integrated circuit substrate. The lift-off layer and the integrated circuit substrate beneath the lift-off layer are etched to form a trench in the integrated circuit substrate. The trench defines a first region on one side of the trench and a second region that is narrower than the first region on the other side of the trench. Plasma chemical vapor deposition is then performed to form an insulating layer filling the trench, on the first region and on the second region, with the insulating layer on the first region being thicker than on the second region. The insulating layer is then etched to expose the lift-off layer in the second region. The lift-off layer is then lifted off from the first region.