Patents by Inventor Min Su Choi

Min Su Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180209325
    Abstract: A device for cooling and heating a urea solution to be injected into exhaust gas discharged from an engine in order to reduce nitrogen oxides in the exhaust gas includes an engine including a cooling fan, a coolant pump, and a main cooler; a urea solution tank storing the urea solution and having an embedded heat exchange pipe through which first coolant and second coolant circulates; an additional coolant tank storing the second coolant; a water pump supplying the second coolant from the additional coolant tank to the heat exchange pipe; a valve configured to be opened or closed in order to supply the first coolant and the second coolant to the heat exchange pipe through a supply line, and to move the first coolant and the second coolant, which are discharged from the heat exchange pipe through a discharge line, to rise coolant pump and the additional coolant tank, respectively and a controller for supplying the second coolant to the heat exchange pipe through the supply line when the urea solution temperatu
    Type: Application
    Filed: July 29, 2015
    Publication date: July 26, 2018
    Applicant: VOLVO CONSTRUCTION EQUIPMENT AB
    Inventors: Dong-Myoung CHOI, Yu-Hee LEE, Eun-Geon YUK, Sung-Hwan SHIN, Min-Su CHOI
  • Publication number: 20180108662
    Abstract: A semiconductor device includes an active region on a substrate, a device isolation film on the substrate to define the active region, a gate trench including a first portion in the active region and a second portion in the device isolation film, a gate electrode including a first gate embedded in the first portion of the gate trench and a second gate embedded in the second portion of the gate trench, a first gate capping pattern on the first gate and filling the first portion of the gate trench, and a second gate capping pattern on the second gate and filling the second portion of the gate trench, an upper surface of the first gate being higher than an upper surface of the second gate, and the first gate capping pattern and the second gate capping pattern have different structures.
    Type: Application
    Filed: December 7, 2017
    Publication date: April 19, 2018
    Inventors: Min Hee Cho, Woo Song Ahn, Min Su Choi, Satoru Yamada, Jun Soo Kim, Sung Sam Lee
  • Patent number: 9853031
    Abstract: A semiconductor device includes an active region on a substrate, a device isolation film on the substrate to define the active region, a gate trench including a first portion in the active region and a second portion in the device isolation film, a gate electrode including a first gate embedded in the first portion of the gate trench and a second gate embedded in the second portion of the gate trench, a first gate capping pattern on the first gate and filling the first portion of the gate trench, and a second gate capping pattern on the second gate and filling the second portion of the gate trench, an upper surface of the first gate being higher than an upper surface of the second gate, and the first gate capping pattern and the second gate capping pattern have different structures.
    Type: Grant
    Filed: February 15, 2017
    Date of Patent: December 26, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Min Hee Cho, Woo Song Ahn, Min Su Choi, Satoru Yamada, Jun Soo Kim, Sung Sam Lee
  • Patent number: 9634012
    Abstract: In a method of forming active patterns, first patterns are formed in a first direction on a cell region of a substrate, and a second pattern is formed on a peripheral circuit region of the substrate. The first pattern extends in a third direction crossing the first direction. First masks are formed in the first direction on the first patterns, and a second mask is formed on the second pattern. The first mask extends in a fourth direction crossing the third direction. Third masks are formed between the first masks extending in the fourth direction. The first and second patterns are etched using the first to third masks to form third and fourth patterns. Upper portions of the substrate are etched using the third and fourth patterns to form first and second active patterns in the cell and peripheral circuit regions.
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: April 25, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-Jin Park, Chan-sic Yoon, Ki-Seok Lee, Hyeon-Ok Jung, Dae-Ik Kim, Bong-Soo Kim, Yong-Kwan Kim, Eun-Jung Kim, Se-Myeong Jang, Min-su Choi, Sung-Hee Han, Yoo-Sang Hwang
  • Publication number: 20170025420
    Abstract: In a method of forming active patterns, first patterns are formed in a first direction on a cell region of a substrate, and a second pattern is formed on a peripheral circuit region of the substrate. The first pattern extends in a third direction crossing the first direction. First masks are formed in the first direction on the first patterns, and a second mask is formed on the second pattern. The first mask extends in a fourth direction crossing the third direction. Third masks are formed between the first masks extending in the fourth direction. The first and second patterns are etched using the first to third masks to form third and fourth patterns. Upper portions of the substrate are etched using the third and fourth patterns to form first and second active patterns in the cell and peripheral circuit regions.
    Type: Application
    Filed: February 4, 2016
    Publication date: January 26, 2017
    Inventors: Tae-Jin Park, Chan-sic Yoon, Ki-Seok Lee, Hyeon-Ok Jung, Dae-Ik Kim, Bong-Soo Kim, Yong-Kwan Kim, Eun-Jung Kim, Se-Myeong Jang, Min-su Choi, Sung-Hee Han, Yoo-Sang Hwang
  • Publication number: 20140186638
    Abstract: Disclosed herein is a method of coating a brake hose fitting. The method includes plating a brake hose fitting with a zinc-nickel (Zn—Ni) alloy including about 6˜12 wt % of nickel (Ni). The method further includes post-treating the plated brake hose fitting with a silicon (Si) solution.
    Type: Application
    Filed: July 23, 2013
    Publication date: July 3, 2014
    Applicants: KIA MOTORS CORPORATION, HYUNDAI MOTOR COMPANY
    Inventors: Gyu Man Sim, Min Su Choi