Abstract: The present disclosure relates to a resin composition for semiconductor adhesion comprising: a thermoplastic resin; a thermosetting resin; a curing agent; and a curing catalyst compound having a specific structure, and an adhesive film for semiconductor, a method for manufacturing a semiconductor package, and a semiconductor package using the same.

Abstract: The present invention discloses a liquid crystal display of a micro display device and a manufacturing method thereof. The device includes: a pixel driving circuit output electrode body in which a pixel circuit output voltage unit, a first columnar electrode, and a first layer electrode are sequentially stacked; a first intermetallic dielectric covering a side surface of the pixel driving circuit output electrode body; a third intermetallic dielectric stacked on a top surface of the first intermetallic dielectric and a top surface of the pattern; a second columnar electrode connected to a top surface of the first layer electrode through penetrating the third intermetallic dielectric; and a protective film stacked on a top surface of the second columnar electrode and a top surface of the third intermetallic dielectric.

Abstract: An example semiconductor device includes a first electrode structure, including a first connection portion and first finger portions extending from the first connection portion, and a second electrode structure, including a second connection portion and second finger portions extending from the second connection portion and alternately arranged with the first finger portions. The first electrode structure may include first lines and first contacts alternately stacked, the second electrode structure may include second lines and second contacts alternately stacked, and the first and second lines and the first and second contacts may be arranged at a first pitch on N levels among a plurality of levels, and are arranged at a second pitch greater than the first pitch on M levels of the plurality of levels, where N may be 3 or more, and M may be less than N.

Abstract: The present disclosure relates to an adhesive composition for semiconductor circuit connection and an adhesive film containing the same. The adhesive composition for semiconductor circuit connection according to the present disclosure can exhibit excellent adhesive strength during thermal compression bonding of a semiconductor circuit, and minimize a warpage of wafer caused by stacking of semiconductor circuits.

Abstract: The present invention relates to an epoxy resin composition for molding a semiconductor having excellent heat resistance and mechanical properties and also having improved visibility while having a low coefficient of thermal expansion and thus exhibiting improved warpage characteristics, and a molding film and a semiconductor package using such an epoxy resin composition for molding a semiconductor.

Abstract: The present invention relates to an epoxy resin composition for molding a semiconductor having excellent heat resistance and mechanical properties and also having improved visibility while having a low coefficient of thermal expansion and thus exhibiting improved warpage characteristics, and a molding film and a semiconductor package using such an epoxy resin composition for molding a semiconductor.

Abstract: The present disclosure relates to a method for manufacturing a semiconductor package including vacuum-laminating a non-conductive film on a substrate on which a plurality of through silicon vias are provided and bump electrodes are formed, and then performing UV irradiation, wherein an increase in melt viscosity before and after UV irradiation can be adjusted to 30% or less, whereby a bonding can be performed without voids during thermo-compression bonding, and resin-insertion phenomenon between solders can be prevented, fillets can be minimized and reliability can be improved.

Abstract: The present invention relates to a method for manufacturing an insulating layer for a semiconductor package which can improve reliability and have excellent heat resistance by removing pores generated in the insulating layer during manufacture of an insulating layer for a semiconductor package using magnetic characteristics, and an insulating layer for a semiconductor package obtained using the method for manufacturing the insulating layer for a semiconductor package.

Abstract: The present disclosure relates to a method for manufacturing a semiconductor package including vacuum-laminating a non-conductive film on a substrate on which a plurality of through silicon vias are provided and bump electrodes are formed, and then performing UV irradiation, wherein an increase in melt viscosity before and after UV irradiation can be adjusted to 30% or less, whereby a bonding can be performed without voids during thermo-compression bonding, and resin-insertion phenomenon between solders can be prevented, fillets can be minimized and reliability can be improved.

Abstract: The present disclosure relates to an adhesive composition for semiconductor circuit connection and an adhesive film containing the same. The adhesive composition for semiconductor circuit connection according to the present disclosure can exhibit excellent adhesive strength during thermal compression bonding of a semiconductor circuit, and minimize a warpage of wafer caused by stacking of semiconductor circuits.

Abstract: The present disclosure relates to a resin composition for semiconductor adhesion comprising: a thermoplastic resin; a thermosetting resin; a curing agent; and a curing catalyst compound having a specific structure, and an adhesive film for semiconductor, a method for manufacturing a semiconductor package, and a semiconductor package using the same.

Abstract: The present invention relates to a method for manufacturing an insulating layer for a semiconductor package which can improve reliability and have excellent heat resistance by removing pores generated in the insulating layer during manufacture of an insulating layer for a semiconductor package using magnetic characteristics, and an insulating layer for a semiconductor package obtained using the method for manufacturing the insulating layer for a semiconductor package.

Abstract: Provided is a mixing system to mix different types of fluids more efficiently. The mixing system installed in a piping in which a first fluid is supplied includes a mixing part including a plurality of mixing members each having a front end and a rear end rotated by a predetermined angle to form a curved surface and disposed to be spaced apart from each other and a supply part supplying a second fluid to a space between adjacent mixing members.

Abstract: The present invention relates to an epoxy resin composition for molding a semiconductor having excellent heat resistance and mechanical properties and also having improved visibility while having a low coefficient of thermal expansion and thus exhibiting improved warpage characteristics, and a molding film and a semiconductor package using such an epoxy resin composition for molding a semiconductor.

Abstract: Disclosed is a composite electrolyte membrane for a fuel cell. The composite electrolyte membrane includes a polybenzimidazole-based polymer and a metal-grafted porous structure. The composite electrolyte membrane is doped with phosphoric acid. The metal-containing porous structure is present in an amount of 0.1 to 30% by weight, based on the weight of the polymer. The presence of the metal-containing porous structure allows the fuel cell electrolyte membrane to have excellent thermal properties and high proton conductivity.

Abstract: Disclosed is a composite electrolyte membrane for a fuel cell. The composite electrolyte membrane includes a polybenzimidazole-based polymer and a metal-grafted porous structure. The composite electrolyte membrane is doped with phosphoric acid. The metal-containing porous structure is present in an amount of 0.1 to 30% by weight, based on the weight of the polymer. The presence of the metal-containing porous structure allows the fuel cell electrolyte membrane to have excellent thermal properties and high proton conductivity.

Abstract: A signal processing apparatus according to the present invention includes: a built-in self test device dividing a digital reference clock signal to output an I division signal and a Q division signal, shifting the I division signal and the Q division signal by predetermined angles, converting the shifted I and Q signal into analog signals to output an I testing signal and a Q testing signal; and a signal processing receiving and processing the I testing signal and the Q testing signal.

Abstract: A tuning circuit of a filter is disclosed to correct a cut-off frequency of the filter. The tuning circuit comprises a current generation unit which includes a first transistor and a resistor, and a capacitor compensation unit which includes a second transistor and a capacitor unit.

Abstract: Provided is a frequency control loop circuit changing division ratios of a frequency synthesizer to oscillate frequencies in a broadband with high precision. The circuit comprises a clock oscillator, a frequency synthesizer, and a demodulator.

Abstract: The present invention relates to a filter and, more particularly, to a tuning circuit of a filter for correcting a cut-off frequency of the filter. The tuning circuit comprises a current generation unit having a first transistor and a variable resistor unit, and a capacitance correction unit having a second transistor, a capacitor unit, an up-down counter and a selection unit for selecting a control path of the up-down counter for varying the resistance or capacitance.