Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

Abstract: A lithographic process is performed on a plurality of semiconductor substrates. The method includes selecting one or more of the substrates as one or more sample substrates. Metrology steps are performed only on the selected one or more sample substrates. Based on metrology results of the selected one or more sample substrates, corrections are defined for use in controlling processing of the substrates or of future substrates. The selection of the one or more sample substrates is based at least partly on statistical analysis of object data measured in relation to the substrates. The same object data or other data can be used for grouping substrates into groups. Selecting of one or more sample substrates can include selecting substrates that are identified by the statistical analysis as most representative of the substrates in their group and/or include elimination of one or more substrates that are identified as unrepresentative.

Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates, As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

Abstract: A method for forming a multi-level metal interconnection, comprising the step of forming a first metal interconnection over an underlying layer; forming an insulating layer having a selected thickness over the underlying layer including the first metal interconnection; etching the insulating layer to form a contact hole, thereby exposing the first metal interconnection; forming a metal plug in the contact hole to contact with the first metal interconnection; etching the insulating layer by a portion of the selected thickness; forming a pair of metal spacers in sidewalls of the metal plug over the insulating layer; and forming a second metal interconnection over the insulating layer to contact with the first metal interconnection through one of the metal spacers.