Abstract: Provided is a hot dip zinc alloy plated steel sheet which is widely used in vehicles, domestic appliances, construction materials or the like and a method for manufacturing the same. A Zn—Al—Mg hot dip zinc alloy plating bath is used for manufacturing the hot dip zinc alloy plated steel strip, and a small amount of Ga or In is added to the plating bath for inhibiting an oxidation reaction of Mg in the plating bath so as to obtain excellent corrosion resistance and external surface of the plated steel sheet which is manufactured at this point.

Abstract: A device for measuring a penetration rate of outdoor air including humidity or oxygen of a material, and a reaction material cartridge for measuring an outdoor air penetration rate. The device includes a reacting part including a reaction material which reacts upon contact with outdoor air passing through a substrate; a cartridge body which accommodates the reaction part, and which is detachable from a measuring unit for measuring a change corresponding to the contact of the reaction material with the outdoor air; and a shielding means which shields the cartridge body, and which is separated from the cartridge body for contact between the reaction material and the outdoor air.

Abstract: Provided is a hot dip zinc (Zn) alloy plated steel sheet having excellent corrosion resistance and surface qualities, and a method of manufacturing the same. For this purpose, provided is a high corrosion resistant hot dip Zn alloy plated steel sheet which includes an underlying steel sheet and a hot dip Zn alloy plating layer, wherein a composition of the hot dip Zn alloy plating layer includes 1 to 3 wt % of aluminum (Al), 1.5 to 4.0 wt % of magnesium (Mg), and Zn and unavoidable impurities as a remainder, in which Al+Mg is in a range of 2.5 to 7.0 wt % and Al: (Al+Mg) ratio is in a range of 0.38 to 0.48, and a method of manufacturing the high corrosion resistant hot dip Zn alloy plated steel sheet.

Abstract: The present invention relates to an energy conversion device using a liquid and, more specifically, to a method and a device for converting mechanical energy into electrical energy by applying an opposite phenomenon to an electrowetting phenomenon. The contact surface with liquid is being changed within a pair of electrodes, and the resulting change in the contact surface with liquid is being utilized for generating electrical energy. The device can be simplified and the manufacturing cost thereof is being reduced, furthermore it is effective in implementing an energy conversion device that is less faulty, by preventing channel blocking phenomenon and not requiring a lubricating layer or an electrode complicatedly patterned on a channel. Besides, it is advantageous in that a flexible device can be realized and a large area application is facilitated by simplifying the device structure.

Abstract: The present invention relates to an energy conversion device using a change of a contact surface with liquid and, more specifically, to a method and a device for converting mechanical energy into electrical energy by applying an opposite phenomenon to an electrowetting phenomenon. The energy conversion device having a simplified structure and reduced manufacturing costs with minimal malfunctions by changing a contact surface with liquid between a pair of electrodes and using the change of the contact surface with the liquid to generate electrical energy such that channel blocking can be prevented or a lubricating layer or electrodes complicatedly patterned on a channel are not required.

Abstract: Provided is a hot dip zinc alloy plated steel sheet which is widely used in vehicles, domestic appliances, construction materials or the like and a method for manufacturing the same. A Zn—Al—Mg hot dip zinc alloy plating bath is used for manufacturing the hot dip zinc alloy plated steel strip, and a small amount of Ga or In is added to the plating bath for inhibiting an oxidation reaction of Mg in the plating bath so as to obtain excellent corrosion resistance and external surface of the plated steel sheet which is manufactured at this point.

Abstract: Disclosed are a method for producing an oxide film using a low temperature process, an oxide film and an electronic device. The method for producing an oxide film according to an embodiment of the present invention includes the steps of coating a substrate with an oxide solution, and irradiating the oxide solution coat with ultraviolet rays under an inert gas atmosphere.

Abstract: Provided is a hot dip zinc (Zn) alloy plated steel sheet having excellent corrosion resistance and surface qualities, and a method of manufacturing the same. For this purpose, the present invention provides a high corrosion resistant hot dip Zn alloy plated steel sheet which includes an underlying steel sheet and a hot dip Zn alloy plating layer, wherein a composition of the hot dip Zn alloy plating layer includes 1 to 3 wt % of aluminum (Al), 1.5 to 4.0 wt % of magnesium (Mg), and Zn and avoidable impurities as a remainder, in which Al+Mg is in a range of 2.5 to 7.0 wt % and Al:(Al+Mg) is in a range of 0.38 to 0.48, and a method of manufacturing the high corrosion resistant hot dip Zn alloy plated steel sheet.

Abstract: Provided are a light, thin, short and small, and multi-functional anisotropic particle-arranged structure including two electrodes having fine pitches that are repeatedly compressed to be connected to external elements, and a method of manufacturing the anisotropic particle-arranged structure. The anisotropic particle-arranged structure includes an elastic polymer layer, and elastic conductors or elastic thermal conductors formed in the elastic polymer layer so that upper and lower portions of the elastic conductors or elastic thermal conductors are exposed.

Abstract: There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.

Abstract: Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.

Abstract: Disclosed is a diffractive micromirror and a method of producing the same. More particularly, the present invention pertains to a diffractive thin-film piezoelectric micromirror, which is operated in a piezoelectric operation manner to assure excellent displacement, operation speed, reliability, linearity, and low voltage operation, and a method of producing the same. The diffractive thin-film piezoelectric micromirror includes a silicon substrate on which a recess is formed to provide an air space to the center thereof, and a piezoelectric mirror layer having a band shape, which is attached to the silicon substrate along both ends of the recess at both ends thereof while being spaced from the bottom of the recess at a center portion thereof and which includes a thin-film piezoelectric material layer to be vertically movable when voltage is applied to the piezoelectric material layer, and thus diffracts an incident light beam.

Abstract: Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.

Abstract: There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.

Abstract: Disclosed herein is a diffractive thin-film piezoelectric light modulator, in which a lower protective layer is formed on a lower support to prevent the lower support from being over-etched when etching, thus increasing the surface smoothness of the lower support and of a micro-mirror. In addition, a method of fabricating the diffractive thin-film piezoelectric light modulator is also provided.

Abstract: The present invention relates, in general, to a light modulator having a variable blaze diffraction grating and, more particularly, to a light modulator having a variable blaze diffraction grating, in which a diffraction member rotates due to piezoelectric force so as to incline a reflective surface.

Abstract: Disclosed is a diffractive micromirror and a method of producing the same. More particularly, the present invention pertains to a diffractive thin-film piezoelectric micromirror, which is operated in a piezoelectric operation manner to assure excellent displacement, operation speed, reliability, linearity, and low voltage operation, and a method of producing the same. The diffractive thin-film piezoelectric micromirror includes a silicon substrate on which a recess is formed to provide an air space to the center thereof, and a piezoelectric mirror layer having a band shape, which is attached to the silicon substrate along both ends of the recess at both ends thereof while being spaced from the bottom of the recess at a center portion thereof and which includes a thin-film piezoelectric material layer to be vertically movable when voltage is applied to the piezoelectric material layer, and thus diffracts an incident light beam.