Abstract: A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

Abstract: Provided are a substrate processing apparatus and method for increasing the uniformity of substrate processing.

Abstract: The present invention relates to a substrate processing apparatus capable of shortening a process time, and the substrate processing apparatus according to the present invention comprises an index chamber having a transfer robot loading/unloading a substrate; a process chamber having a heating means heating the substrate and processing the substrate; a loadlock chamber disposed between the index chamber and the process chamber; and a conveying chamber having a conveying robot conveying the substrate between the process chamber and the loadlock chamber, wherein a pre-heating means is provided in the conveying robot to pre-heat the substrate in a state before processing.

Abstract: A substrate processing apparatus includes: a processing chamber including a plasma generating region, a gas mixing region, and a substrate processing region; a first gas supply line supplying a first processing gas to the plasma generating region; a second gas supply line supplying a second processing gas to the gas mixing region; an ion blocker disposed between the plasma generating region and the gas mixing region; and a shower head disposed between the gas mixing region and the substrate processing region, wherein the ion blocker has a first blocker flow path unit connected to the second gas supply line and open to the plasma generating region, so that the second processing gas is supplied to the plasma generating region.

Abstract: A substrate processing apparatus and method for increasing substrate processing efficiency are provided. The substrate processing apparatus comprises a process chamber, in which a reaction gas is processed to have a first pressure therein, a first pumping module for pumping the process chamber to have a second pressure smaller than the first pressure, a second pumping module for pumping the process chamber to have a third pressure smaller than the second pressure, and a first automatic pressure control module for adjusting a magnitude of the second pressure by adjusting a pumping pressure of the first pumping module.

Abstract: Provided are a substrate processing apparatus and method for increasing the uniformity of substrate processing.

Abstract: An exemplary embodiment of the present invention provides a substrate treating apparatus, including: a chamber having an inner space; a shower head for partitioning the inner space into an upper first zone and a lower second zone, and formed with a plurality of through holes; a support unit for supporting a substrate in the second zone; a gas supply unit for supplying gas to the first zone; a plasma source for forming a plasma in the first zone by exciting the gas; and an adsorption plate coupled to the shower head, in which a surface of the adsorption plate is provided with a material that adsorbs radicals contained in the plasma.

Abstract: A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

Abstract: A substrate treating apparatus configuring an individual LL for each PM and a semiconductor manufacturing facility including the same are provided. The semiconductor manufacturing facility comprises an index module including a first transfer robot and for carrying out and transferring a substrate mounted on a container using the first transfer robot, a transfer module including a second transfer robot and for relaying the substrate transferred by the index module using the second transfer robot, a buffer chamber for heating the substrate relayed by the transfer module, and a process chamber for treating the substrate heated by the buffer chamber, wherein the buffer chamber heats the substrate while the substrate waits before being loaded into the process chamber.

Abstract: A substrate processing apparatus including a substrate support unit connected to a vacuum pump to fix a substrate is provided. The substrate processing apparatus comprises a chamber including a processing space therein, a substrate support unit disposed in the processing space and for supporting a substrate, a first vacuum pump, a second vacuum pump connected to the processing space of the chamber, a first valve disposed between the first vacuum pump and the second vacuum pump, and a second valve disposed between the first vacuum pump and the substrate support unit, wherein the first vacuum pump reduces a pressure in a space between the substrate support unit and the substrate to fix the substrate to the substrate support unit in response to the second valve being turned on.

Abstract: An apparatus for processing a substrate comprises a processing vessel having a processing space inside, a substrate support unit that supports and rotates the substrate in the processing vessel, and a nozzle unit that dispenses a processing liquid onto the substrate. The nozzle unit comprises a nozzle that dispenses the processing liquid and an ultraviolet (UV) light supply unit that emits UV light to activate radicals of the processing liquid dispensed onto the substrate.

Abstract: The present invention relates to a substrate processing apparatus capable of shortening a process time, and the substrate processing apparatus according to the present invention comprises an index chamber having a transfer robot loading/unloading a substrate; a process chamber having a heating means heating the substrate and processing the substrate; a loadlock chamber disposed between the index chamber and the process chamber; and a conveying chamber having a conveying robot conveying the substrate between the process chamber and the loadlock chamber, wherein a pre-heating means is provided in the conveying robot to pre-heat the substrate in a state before processing.

Abstract: The present disclosure relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus according to the exemplary embodiment of the present disclosure may include: a processing liquid supply tube; a nozzle unit which is supplied with a processing liquid from the processing liquid supply tube and discharges the processing liquid to the substrate; and a light source unit which is provided to irradiate the processing liquid discharged from the nozzle unit with ultraviolet rays. According to the present disclosure, the processing liquid, which is electrified while passing the processing liquid supply tube, is irradiated with ultraviolet rays, such that electricity is eliminated from the electrified processing liquid, and as a result, it is possible to minimize a problem that the substrate is contaminated by peripheral particles or arcing occurs on the substrate.

Abstract: An apparatus for processing a substrate compries a processing vessel having a processing space inside, a substrate support unit that supports and rotates the substrate in the processing vessel, and a nozzle unit that dispenses a processing liquid onto the substrate. The nozzle unit compries a nozzle that dispenses the processing liquid and an ultraviolet (UV) light supply unit that emits UV light to activate radicals of the processing liquid dispensed onto the substrate.

Abstract: The present disclosure relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus according to the exemplary embodiment of the present disclosure may include: a processing liquid supply tube; a nozzle unit which is supplied with a processing liquid from the processing liquid supply tube and discharges the processing liquid to the substrate; and a light source unit which is provided to irradiate the processing liquid discharged from the nozzle unit with ultraviolet rays. According to the present disclosure, the processing liquid, which is electrified while passing the processing liquid supply tube, is irradiated with ultraviolet rays, such that electricity is eliminated from the electrified processing liquid, and as a result, it is possible to minimize a problem that the substrate is contaminated by peripheral particles or arcing occurs on the substrate.

Abstract: Disclosed is a substrate drying apparatus of substrate processing apparatus including a chamber that provides a space for processing a substrate, and a fluid supply unit that supplies a process fluid to the chamber, wherein the liquid supply unit includes a supply tank in which the fluid is stored, a supply line that connects the supply tank and the chamber, a branch line branched from a first point of the supply line and connected to a second point of the supply line, and a temperature control unit that adjusts the temperature of the fluid such that the temperatures of the fluids flowing through the supply line and the branch line between the first point and the second point are different.

Abstract: Disclosed are a liquid treating apparatus and a liquid treating method. The liquid treating apparatus includes a chamber that provides a space for processing a substrate, a support unit that is provided in the chamber to support the substrate, an ejection unit that has a nozzle for supplying a cleaning medium to the substrate supported by the support unit, and an auxiliary ejection unit that has an auxiliary nozzle for supplying a contamination prevention liquid to the substrate supported by the support unit.

Abstract: Disclosed is a substrate drying apparatus of substrate processing apparatus including a chamber that provides a space for processing a substrate, and a fluid supply unit that supplies a process fluid to the chamber, wherein the liquid supply unit includes a supply tank in which the fluid is stored, a supply line that connects the supply tank and the chamber, a branch line branched from a first point of the supply line and connected to a second point of the supply line, and a temperature control unit that adjusts the temperature of the fluid such that the temperatures of the fluids flowing through the supply line and the branch line between the first point and the second point are different.