Abstract: A sacrificial passivation film deposition method according to an exemplary embodiment of the present disclosure may include: depositing a primary sacrificial passivation film on an entire surface of a substrate using a thermal ALD (T-ALD) process; and additionally depositing a secondary sacrificial passivation film on an upper surface and at least a portion of a side surface of an upper portion of the primary sacrificial passivation film using a plasma-ALD (P-ALD) process.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit disposed within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space; and wherein the plasma generation unit comprises: a bottom electrode member; and a top electrode member opposite to the bottom electrode member, wherein the top electrode member comprises: an electrode plate including an electrode; a first plate made of a different material from the electrode plate; and a second plate, and wherein the second plate, the electrode plate, and the first plate are stacked on one another.

Abstract: A substrate processing method capable of stably performing atomic layer etching without damaging a process chamber is provided. The substrate processing method comprises providing a substrate including a target layer in a chamber, forming a first plasma in the chamber by using a first gas containing chlorine to first reform the target layer, forming a second plasma in the chamber by using a second gas containing oxygen to second reform the first reformed target layer, providing a precursor into the chamber to react the second reformed target layer with the precursor, and removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit positioned within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space, and wherein the plasma generation unit includes: a bottom electrode member and a top electrode member disposed opposite the bottom electrode, and wherein the top electrode member includes: a first plate; and an electrode pattern on the first plate and having a pattern.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit positioned within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space, and wherein the plasma generation unit includes: a bottom electrode member; and a top electrode member opposite the bottom electrode, and wherein the top electrode member includes: a first plate; and an electrode layer on the first plate and including an electrode.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing a treating space; a support unit supporting a substrate at the treating space; a gas supply unit configured to introduce a gas to the treating space; a plasma source configured to provide an energy for exciting a gas introduced to the treating space to a plasma; an exhaust unit configured to exhaust an atmosphere within the treating space to an outside of the treating space; and a heating source positioned above the support unit, and wherein the heating source applies a heating energy in a pulse form to the substrate.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus comprises a chamber having a treating space therein; a support unit placed within the treating space and supporting a substrate; and a plasma generating unit for generating a plasma from a process gas supplied to the treating space, and wherein the plasma generating unit comprising: a first electrode; and a second electrode facing the first electrode, the second electrode made of a material capable of transmitting electromagnetic waves.

Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.

Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.

Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.

Abstract: A system and method for the removal of deposited material from the walls of a plasma chamber is disclosed. The system may have two modes; a normal operating mode and a cleaning mode. During the cleaning mode, the plasma is biased at a higher potential than the walls, thereby causing energetic ions from the plasma to strike the plasma wall, dislodging material previously deposited. This may be achieved through the use of one or more electrodes disposed in the plasma chamber, which are maintained at a first voltage during normal operating mode, and a second, higher voltage, during the cleaning mode.

Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.

Abstract: An improved method of manufacturing a back contact solar cell is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (IBC) solar cells. A mask paste is applied to the tunnel oxide layer. Silicon is deposited on the tunnel oxide layer. The placement of the mask paste causes discrete regions of deposited silicon to be created. Using a shadow mask, dopant is implanted into one or more of these discrete and separate regions. After the implanting of dopant, metal is sputtered onto the deposited silicon to create electrodes. Following the deposition of the metal layer, the mask paste is removed, such as using a wet etch process. The resulting solar cell has discrete doped regions each with a corresponding electrode applied thereon. These discrete doped regions are separated by a gap, which extends to the tunnel oxide layer.

Abstract: A system and method for the removal of deposited material from the walls of a plasma chamber is disclosed. The system may have two modes; a normal operating mode and a cleaning mode. During the cleaning mode, the plasma is biased at a higher potential than the walls, thereby causing energetic ions from the plasma to strike the plasma wall, dislodging material previously deposited. This may be achieved through the use of one or more electrodes disposed in the plasma chamber, which are maintained at a first voltage during normal operating mode, and a second, higher voltage, during the cleaning mode.

Abstract: The present disclosure relates to a method for manufacturing a back electrode-type solar cell. The method for manufacturing a back electrode-type solar cell disclosed herein includes: A method for manufacturing a back electrode-type solar cell, comprising: preparing an n-type crystalline silicon substrate; forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate; forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate; patterning the thermal diffusion control film so that the back surface of the substrate is selectively exposed; and forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n?) at the front surface of the substrate by performing a thermal diffusion process, and forming a p+ emitter region by activating the p-type impurity region.

Abstract: The present disclosure relates to a method for manufacturing a back electrode-type solar cell. The method for manufacturing a back electrode-type solar cell disclosed herein includes: A method for manufacturing a back electrode-type solar cell, comprising: preparing an n-type crystalline silicon substrate; forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate; forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate; patterning the thermal diffusion control film so that the back surface of the substrate is selectively exposed; and forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n?) at the front surface of the substrate by performing a thermal diffusion process, and forming a p+ emitter region by activating the p-type impurity region.

Abstract: Silicon nanosized linear bodies with different structures and properties can be produced by appropriately setting the condition for the pretreatment by a radical (reaction condition of a hydrogen radical, e.g. concentration). A silicon nanosized linear body is produced from a silicon radical active species in the presence of a catalyst. The catalyst is at least one selected from Ga, Ga compound, In, In compound, Tl and Tl compound that are pretreated by a radical.