Abstract: The present invention provides extracellular vesicles isolated from stem cells treated with zymosan, Poly I:C, and monophosphoryl lipid A (MPLA), their use for treatment of cancer, and a method for preparing the same. The extracellular vesicles according to the present invention contain various miRNAs and cytokines related to anticancer effects, and have tumor growth inhibitory effects. In addition, since the extracellular vesicles exhibit a synergistic effect in cancer treatment when administered in combination with an immune checkpoint inhibitor, a pharmaceutical composition for cancer treatment containing the extracellular vesicles as an active ingredient is highly likely to be effectively useful in cancer treatment by increasing immune activity in the body.

Abstract: An embodiment anode for an all-solid-state battery, the anode including an anode current collector and an anode active material layer disposed on the anode current collector and including an anode active material, the anode active material including a plate-type carbon material, wherein a length ratio (a/c) of a major axis (a) to a thickness (c) of the plate-type carbon material is 4 or more, and a coating layer coating a portion of a surface of the plate-type carbon material, wherein the coating layer includes a lithiophilic material.

Abstract: A power trading system of virtual power plant includes a plurality of virtual power plants connected to a power system and including a distributed energy resource; a heat conversion device connected to the power system and converting the power generated from the plurality of distributed energy resources into thermal energy; and a power trading device configured to analyze an excess and insufficient power amount of the plurality of virtual power plant due to an output variation of the distributed energy resource, control power trading between the plurality of virtual power plant, the power system, or the heat conversion device by using the analysis result of the excess and insufficient power amount to stabilize the output of the power system and the virtual power plant.

Abstract: A virtual power plant system using a renewable combined heat and power plant includes a plurality of distributed energy resources connected to a virtual power plant; a virtual power plant output adjustment device connected to the virtual power plant and including a renewable combined heat and power plant that produces electricity using a new and renewable energy source; and a virtual power plant management device configured to conduct a bidding by predicting an power generation amount of the plurality of distributed energy resources, analyze output variation and error of the virtual power plant based on the power generation amount of the plurality of distributed energy resources, and stabilize an output variation of the virtual power plant by controlling a power generation amount of the virtual power plant output adjustment device.

Abstract: A virtual power plant system using a heat conversion device includes a plurality of distributed energy resources connected to a virtual power plant; a virtual power plant output adjustment device connected to the virtual power plant and including a heat conversion device that receives power generated from the plurality of distributed energy resources and converts the power into thermal energy, a virtual power plant management device configured to conduct a bidding by predicting an expected power generation amount of the plurality of distributed energy resources, analyze output variation and error of the virtual power plant due to an output variation of the plurality of distributed energy resources, and stabilize an output variation of the virtual power plant by controlling a power consumption amount of the virtual power plant output adjustment device based on the analysis result.

Abstract: A power trading system of virtual power plant includes a plurality of virtual power plants connected to a power system and including a distributed energy resource; a heat conversion device connected to the power system and converting the power generated from the plurality of distributed energy resources into thermal energy; and a power trading device configured to analyze an excess and insufficient power amount of the plurality of virtual power plant due to an output variation of the distributed energy resource, control power trading between the plurality of virtual power plant, the power system, or the heat conversion device by using the analysis result of the excess and insufficient power amount to stabilize the output of the power system and the virtual power plant.

Abstract: A virtual power plant system using a renewable combined heat and power plant includes a plurality of distributed energy resources connected to a virtual power plant; a virtual power plant output adjustment device connected to the virtual power plant and including a renewable combined heat and power plant that produces electricity using a new and renewable energy source; and a virtual power plant management device configured to conduct a bidding by predicting an power generation amount of the plurality of distributed energy resources, analyze output variation and error of the virtual power plant based on the power generation amount of the plurality of distributed energy resources, and stabilize an output variation of the virtual power plant by controlling a power generation amount of the virtual power plant output adjustment device.

Abstract: A virtual power plant system using a heat conversion device includes a plurality of distributed energy resources connected to a virtual power plant; a virtual power plant output adjustment device connected to the virtual power plant and including a heat conversion device that receives power generated from the plurality of distributed energy resources and converts the power into thermal energy, a virtual power plant management device configured to conduct a bidding by predicting an expected power generation amount of the plurality of distributed energy resources, analyze output variation and error of the virtual power plant due to an output variation of the plurality of distributed energy resources, and stabilize an output variation of the virtual power plant by controlling a power consumption amount of the virtual power plant output adjustment device based on the analysis result.

Abstract: A semiconductor memory device includes a substrate including a peripheral circuit, a stepped dummy stack overlapping the substrate and including a plurality of steps extending in a first direction, a plurality of contact groups passing through the stepped dummy stack, and upper lines respectively connected to the contact groups. The contact groups include a first contact group having two or more first contact plugs arranged in the first direction. The upper lines include a first upper line commonly connected to the first contact plugs.

Abstract: A semiconductor memory device includes a substrate including a peripheral circuit, a stepped dummy stack overlapping the substrate and including a plurality of steps extending in a first direction, a plurality of contact groups passing through the stepped dummy stack, and upper lines respectively connected to the contact groups. The contact groups include a first contact group having two or more first contact plugs arranged in the first direction. The upper lines include a first upper line commonly connected to the first contact plugs.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: A semiconductor device includes a stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings, liner layers formed in the openings over the semiconductor patterns, and gap-fill insulating layers formed over the liner layers to fill the openings, wherein each of the gap-fill insulating layers seals an upper portion of the opening and includes at least one air gap.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: In accordance with an embodiment of the present disclosure, a method of manufacturing a semiconductor device may include forming an opening passing-through a multi-layer stack, forming a channel layer on and along a sidewall of the opening, forming a conductive layer on and along a sidewall of the channel layer, and applying a laser to the conductive layer to transfer a heat from the conductive layer to the channel layer to heat-treat the channel layer using the heat.

Abstract: A semiconductor device includes a stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings, liner layers formed in the openings over the semiconductor patterns, and gap-fill insulating layers formed over the liner layers to fill the openings, wherein each of the gap-fill insulating layers seals an upper portion of the opening and includes at least one air gap.

Abstract: A semiconductor device includes stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings, liner layers formed in the openings over the semiconductor patterns, and gap-fill insulating layers formed over the liner layers to fill the openings, wherein each of the gap-fill insulating layers seals an upper portion of the opening and includes at least one air gap.

Abstract: In accordance with an embodiment of the present disclosure, a method of manufacturing a semiconductor device may include forming an opening passing-through a multi-layer stack, forming a channel layer on and along a sidewall of the opening, forming a conductive layer on and along a sidewall of the channel layer, and applying a laser to the conductive layer to transfer a heat from the conductive layer to the channel layer to heat-treat the channel layer using the heat.

Abstract: In accordance with an embodiment of the present disclosure, a method of manufacturing a semiconductor device may include forming an opening passing-through a multi-layer stack, forming a channel layer on and along a sidewall of the opening, forming a conductive layer on and along a sidewall of the channel layer, and applying a laser to the conductive layer to transfer a heat from the conductive layer to the channel layer to heat-treat the channel layer using the heat.