Patents by Inventor Min-Tzu HSU

Min-Tzu HSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitor bank structure and semiconductor package structure
    Patent number: 11545427
    Abstract: A capacitor bank structure includes a plurality of capacitors, a protection material, a first dielectric layer and a plurality of first pillars. The capacitors are disposed side by side. Each of the capacitors has a first surface and a second surface opposite to the first surface, and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes are disposed adjacent to the first surface for external connection, and the second electrodes are disposed adjacent to the second surface for external connection. The protection material covers the capacitors, sidewalls of the first electrodes and sidewalls of the second electrodes, and has a first surface corresponding to the first surface of the capacitor and a second surface corresponding to the second surface of the capacitor. The first dielectric layer is disposed on the first surface of the protection material, and defines a plurality of openings to expose the first electrodes.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: January 3, 2023
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Cheng-Yuan Kung, Chien-Hua Chen, Teck-Chong Lee, Hung-Yi Lin, Pao-Nan Lee, Hsin Hsiang Wang, Min-Tzu Hsu, Po-Hao Chen
  • CAPACITOR BANK STRUCTURE, SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20190393297
    Abstract: A capacitor bank structure includes a plurality of capacitors, a protection material, a first dielectric layer and a plurality of first pillars. The capacitors are disposed side by side. Each of the capacitors has a first surface and a second surface opposite to the first surface, and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes are disposed adjacent to the first surface for external connection, and the second electrodes are disposed adjacent to the second surface for external connection. The protection material covers the capacitors, sidewalls of the first electrodes and sidewalls of the second electrodes, and has a first surface corresponding to the first surface of the capacitor and a second surface corresponding to the second surface of the capacitor. The first dielectric layer is disposed on the first surface of the protection material, and defines a plurality of openings to expose the first electrodes.
    Type: Application
    Filed: June 20, 2019
    Publication date: December 26, 2019
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Cheng-Yuan KUNG, Chien-Hua CHEN, Teck-Chong LEE, Hung-Yi LIN, Pao-Nan LEE, Hsin Hsiang WANG, Min-Tzu HSU, Po-Hao CHEN