Abstract: A first fin structure is disposed over a substrate. The first fin structure contains a semiconductor material. A gate dielectric layer is disposed over upper and side surfaces of the first fin structure. A gate electrode layer is formed over the gate dielectric layer. A second fin structure is disposed over the substrate. The second fin structure is physically separated from the first fin structure and contains a ferroelectric material. The second fin structure is electrically coupled to the gate electrode layer.

Abstract: The present disclosure provides a method of forming a semiconductor device including an nFET structure and a pFET structure where each of the nFET and pFET structures include a semiconductor substrate and a gate trench. The method includes depositing an interfacial layer in each gate trench, depositing a first ferroelectric layer over the interfacial layer, removing the first ferroelectric layer from the nFET structure, depositing a metal oxide layer in each gate trench, depositing a second ferroelectric layer over the metal oxide layer, removing the second ferroelectric layer from the pFET structure, and depositing a gate electrode in each gate trench.

Abstract: A liquid crystal display includes: a backlight module, a LCD panel, a first polarizer, and a second polarizer. The LCD panel is disposed over the emitting surface of the backlight module, the first polarizer is disposed between the backlight module and the LCD panel, and the second polarizer, relative to the first polarizer, is disposed on the other side of the LCD panel. The first polarizer includes a first polarizing layer, a first optical film, and a second optical film. The first optical film is disposed on the one side of the first polarizing layer, and the second optical film, relative to the first optical film, is disposed on the other side of the first polarizing layer. The second optical film is a Polymethyl Methacrylate optical film, and the second optical film is closer to the LCD panel than the first optical film does.

Abstract: The present invention discloses an optical film and method of manufacturing the same. The selected PMMA is well mixed with a solvent to form a wet film by employing a solvent molding technology, and then the wet film is heated to form a dry film. The optical film comprises a material at least selected from a group consisting of PMMA, PMMA with a first functional group replaced by a second functional group and PMMA of intermixing a mixture; and a solvent well mixed with the material selected from the group consisting of PMMA, PMMA with a first functional group replaced by a second functional group and PMMA of intermixing a mixture at a predetermine proportion to form a mixing solution under various conditions, thereby the optical film is formed from the mixing solution by way of a dry treatment.