Patents by Inventor Min-whan Kim

Min-whan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power semiconductor device having high breakdown voltage and method for fabricating the same
    Patent number: 6486512
    Abstract: A power semiconductor device and a method for fabricating the same are provided. The power semiconductor device includes a source structure having a projected portion with a tip-shaped end portion on its center and formed so as to surround a predetermined region of right and left and upper portions of the projected portion. Two drain structures are formed in a predetermined region surrounded by the source structure. Extended drain structures are formed around the drain structures and the extended drain structures function as a channel with a field effect channel between sides of the projected portion of the source structure. Accordingly, since there are no drain structures on the tip of the projected portion of the source structure, although a radius of curvature of the tip of the projected portion is small, a decrease in a breakdown voltage of a device due to the small radius of curvature of the tip of the projected portion can be suppressed.
    Type: Grant
    Filed: February 23, 2001
    Date of Patent: November 26, 2002
    Assignee: Fairchild Korea Semiconductor Ltd.
    Inventors: Chang-ki Jeon, Jong-jib Kim, Young-suk Choi, Chang-seong Choi, Min-whan Kim
  • Power semiconductor device having high breakdown voltge and method for fabricating the same
    Publication number: 20010030346
    Abstract: A power semiconductor device and a method for fabricating the same are provided. The power semiconductor device includes a source structure having a projected portion with a tip-shaped end portion on its center and formed so as to surround a predetermined region of right and left and upper portions of the projected portion. Two drain structures are formed in a predetermined region surrounded by the source structure. Extended drain structures are formed around the drain structures and the extended drain structures function as a channel with a field effect channel between sides of the projected portion of the source structure. Accordingly, since there are no drain structures on the tip of the projected portion of the source structure, although a radius of curvature of the tip of the projected portion is small, a decrease in a breakdown voltage of a device due to the small radius of curvature of the tip of the projected portion can be suppressed.
    Type: Application
    Filed: February 23, 2001
    Publication date: October 18, 2001
    Applicant: Fairchild Korea Semiconductor Ltd.,
    Inventors: Chang-Ki Jeon, Jong-Jib Kim, Young-Suk Choi, Chang-Seong Choi, Min-Whan Kim