Patents by Inventor Min Wook CHOI
Min Wook CHOI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240128605Abstract: Provided are an electrode assembly, a battery, and a battery pack and vehicle including the same. An electrode assembly, in which a first electrode, a second electrode, and a separator interposed therebetween are wound about an axis to define a core and an outer circumferential surface. At least one of the first electrode and the second electrode includes, at a long side end portion, an uncoated portion exposed beyond the separator in a direction of the axis. At least a part of the uncoated portion is bent in a radial direction of the electrode assembly to define a bent surface region having overlapping layers of the uncoated portion. The bent surface region includes a welding target region having a number of the overlapping layers of the uncoated portion, and the welding target region extends along a radial direction of the electrode assembly.Type: ApplicationFiled: February 18, 2022Publication date: April 18, 2024Applicant: LG ENERGY SOLUTION, LTD.Inventors: Min-Woo KIM, Do-Gyun KIM, Kyung-Wook CHO, Geon-Woo MIN, Min-Ki JO, Jae-Woong KIM, Kwang-Su HWANGBO, Hae-Jin LIM, Su-Ji CHOI, Jae-Won LIM, Hak-Kyun KIM, Je-Jun LEE, Ji-Min JUNG
-
Publication number: 20240120616Abstract: A secondary battery includes an electrode assembly having a positive electrode provided with a positive electrode tab, a separator, and a negative electrode provided with a negative electrode tab, the positive electrode, the separator, and the negative electrode being wound, the electrode assembly having a core part at a center thereof; a can configured to receive the electrode assembly therein, the negative electrode tab being connected to the can; a cap assembly coupled to an opening of the can, the positive electrode tab being connected to the cap assembly; and a reinforcing member provided on an end of the separator exposed beyond the positive electrode or the negative electrode to prevent heat of the positive electrode tab or the negative electrode tab from being transferred to the separator.Type: ApplicationFiled: April 19, 2022Publication date: April 11, 2024Applicant: LG ENERGY SOLUTION, LTD.Inventors: Soon Kwan KWON, Su Taek JUNG, Seok Hoon JANG, Hyeok JEONG, Sang Ho BAE, Byeong Kyu LEE, Seong Won CHOI, Min Wook KIM, Yong Jun LEE
-
Patent number: 11932618Abstract: Disclosed are novel compounds of Chemical Formula 1, optical isomers of the compounds, and pharmaceutically acceptable salts of the compounds or the optical isomers. The compounds, isomers, and salts exhibit excellent activity as GLP-1 receptor agonists. In particular, they, as GLP-1 receptor agonists, exhibit excellent glucose tolerance, thus having a great potential to be used as therapeutic agents for metabolic diseases. Moreover, they exhibit excellent pharmacological safety for cardiovascular systems.Type: GrantFiled: March 13, 2023Date of Patent: March 19, 2024Assignee: ILDONG PHARMACEUTICAL CO., LTD.Inventors: Hong Chul Yoon, Kyung Mi An, Myong Jae Lee, Jin Hee Lee, Jeong-geun Kim, A-rang Im, Woo Jin Jeon, Jin Ah Jeong, Jaeho Heo, Changhee Hong, Kyeojin Kim, Jung-Eun Park, Te-ik Sohn, Changmok Oh, Da Hae Hong, Sung Wook Kwon, Jung Ho Kim, Jae Eui Shin, Yeongran Yoo, Min Whan Chang, Eun Hye Jang, In-gyu Je, Ji Hye Choi, Gunhee Kim, Yearin Jun
-
Patent number: 11918365Abstract: An electrocardiogram (ECG) measurement device for a vehicle is provided. The ECG measurement device includes an impedance compensator that corresponds to an electrode in contact with a body of a driver and configured to compensate an impedance of each of electrode signals received from the electrode. An electrode selector sequentially selects the electrode signals in response to receiving the electrode signals from the electrode. A differential amplifier differentially amplifies the electrode signals. In particular, each electrode signal has the compensated impedance. Additionally, a signal quality evaluator evaluates quality of an ECG signal output from the differential amplifier and a compensation controller then adjusts an impedance compensation value of each of the impedance compensators as a result of evaluating the quality of the ECG signal.Type: GrantFiled: November 15, 2021Date of Patent: March 5, 2024Assignees: Hyundai Motor Company, Kia CorporationInventors: Yoon Jong Choi, Hyun Wook Jun, Yeong Joon Gil, Min Yong Shin, Soo Hwan Kim
-
Patent number: 11916186Abstract: The present invention relates to a method for preparing a sulfide-based solid electrolyte, a sulfide-based solid electrolyte prepared by the method, and an all-solid-state lithium secondary battery including the sulfide-based solid electrolyte. The method of the present invention includes a) mixing Li2S with P2S5 to prepare a mixed powder, b) placing the mixed powder, an ether, and stirring balls in a container, sealing the container, followed by stirring to prepare a suspension, and c) stirring the suspension under high-temperature and high-pressure conditions to prepare sulfide-based solid particles.Type: GrantFiled: February 15, 2017Date of Patent: February 27, 2024Assignee: SOLIVIS INC.Inventors: Dong Wook Shin, Min Yong Eom, Seung Hyun Oh, Chan Hwi Park, Sun Ho Choi
-
Publication number: 20190169884Abstract: A door latch apparatus may include an inside handle lever to which operation force of an inside handle is transmitted via an inner knob cable, a lock lever for converting a door into a locked state or an unlocked state by means of operation of a safety knob, and a one-motion lever capable of rotating together with the inside handle lever when the inside handle lever is rotated.Type: ApplicationFiled: November 12, 2018Publication date: June 6, 2019Inventors: Min-Hyung Byun, Seok-Hyun Hong, Ki-Hwan Jeong, Soon-Ho Her, Min-Wook Choi
-
Patent number: 9786817Abstract: A semiconductor light emitting device includes a semiconductor stack including a first conductive semiconductor layer including a first surface, a second conductive semiconductor layer including a second surface opposite to the first surface, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a through hole disposed through the semiconductor stack. The semiconductor light emitting device further includes a contact layer connected to the first conductive semiconductor layer, disposed in the through hole, and disposed through the semiconductor stack, a first electrode layer connected to the contact layer, and a second electrode layer disposed on the second surface, and including a pad forming portion on which the semiconductor stack is not disposed.Type: GrantFiled: April 7, 2016Date of Patent: October 10, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Joon Kim, Young Ho Ryu, Min Wook Choi
-
Publication number: 20170077353Abstract: A semiconductor light emitting device includes a semiconductor stack including a first conductive semiconductor layer including a first surface, a second conductive semiconductor layer including a second surface opposite to the first surface, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a through hole disposed through the semiconductor stack. The semiconductor light emitting device further includes a contact layer connected to the first conductive semiconductor layer, disposed in the through hole, and disposed through the semiconductor stack, a first electrode layer connected to the contact layer, and a second electrode layer disposed on the second surface, and including a pad forming portion on which the semiconductor stack is not disposed.Type: ApplicationFiled: April 7, 2016Publication date: March 16, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Joon KIM, Young Ho RYU, Min Wook CHOI
-
Patent number: 9553234Abstract: A method of manufacturing a nanostructure semiconductor light emitting device may includes preparing a mask layer by sequentially forming a first insulating layer and a second insulating layer on a base layer configured of a first conductivity-type semiconductor, forming a plurality of openings penetrating the mask layer, growing a plurality of nanorods in the plurality of openings, removing the second insulating layer, preparing a plurality of nanocores by re-growing the plurality of nanorods, and forming nanoscale light emitting structures by sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores. The plurality of openings may respectively include a mold region located in the second insulating layer, and the mold region includes at least one curved portion of which an inclination of a side surface varies according to proximity to the first insulating layer.Type: GrantFiled: January 28, 2015Date of Patent: January 24, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Nam Goo Cha, Ki Hyung Lee, Wan Tae Lim, Geun Woo Ko, Min Wook Choi
-
Patent number: 9537051Abstract: A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructureType: GrantFiled: August 28, 2015Date of Patent: January 3, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Nam Goo Cha, Jin Bock Lee, Dong Kuk Lee, Dong Hyun Cho, Min Wook Choi
-
Publication number: 20160064609Abstract: A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructureType: ApplicationFiled: August 28, 2015Publication date: March 3, 2016Inventors: Nam Goo CHA, Jin Bock LEE, Dong Kuk LEE, Dong Hyun CHO, Min Wook CHOI
-
Publication number: 20160013364Abstract: A method of manufacturing a nanostructure semiconductor light emitting device may includes preparing a mask layer by sequentially forming a first insulating layer and a second insulating layer on a base layer configured of a first conductivity-type semiconductor, forming a plurality of openings penetrating the mask layer, growing a plurality of nanorods in the plurality of openings, removing the second insulating layer, preparing a plurality of nanocores by re-growing the plurality of nanorods, and forming nanoscale light emitting structures by sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores. The plurality of openings may respectively include a mold region located in the second insulating layer, and the mold region includes at least one curved portion of which an inclination of a side surface varies according to proximity to the first insulating layer.Type: ApplicationFiled: January 28, 2015Publication date: January 14, 2016Inventors: Nam Goo CHA, Ki Hyung LEE, Wan Tae LIM, Geun Woo KO, Min Wook CHOI
-
Publication number: 20150129834Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer, a plurality of light emitting nanostructures disposed on the first conductivity-type semiconductor base layer to be spaced apart from one another, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer and a second conductivity-type semiconductor layer, and a filling layer including a refractive portion disposed between the light emitting nanostructures and a cover portion filled between the light emitting nanostructures and enclosing the refractive portion.Type: ApplicationFiled: August 28, 2014Publication date: May 14, 2015Inventors: Nam Goo CHA, Dong Hoon LEE, Min Wook CHOI, Kyung Wook HWANG