Abstract: An image sensor is provided. The image sensor includes, a substrate including a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data, a photoelectric conversion layer disposed on the light-receiving region of the substrate, an anti-reflection layer disposed on the photoelectric conversion layer and including a plurality of subsidiary anti-reflection layers, a microlens disposed on the anti-reflection layer, a delamination-preventing layer disposed on the pad region of the substrate, and a wiring layer disposed on the delamination-preventing layer, wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition.

Abstract: An image sensor is provided. The image sensor includes, a substrate including a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data, a photoelectric conversion layer disposed on the light-receiving region of the substrate, an anti-reflection layer disposed on the photoelectric conversion layer and including a plurality of subsidiary anti-reflection layers, a microlens disposed on the anti-reflection layer, a delamination-preventing layer disposed on the pad region of the substrate, and a wiring layer disposed on the delamination-preventing layer, wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition.

Abstract: An image sensor is provided. The image sensor includes, a substrate including a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data, a photoelectric conversion layer disposed on the light-receiving region of the substrate, an anti-reflection layer disposed on the photoelectric conversion layer and including a plurality of subsidiary anti-reflection layers, a microlens disposed on the anti-reflection layer, a delamination-preventing layer disposed on the pad region of the substrate, and a wiring layer disposed on the delamination-preventing layer, wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition.

Abstract: An image sensor is provided. The image sensor includes, a substrate including a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data, a photoelectric conversion layer disposed on the light-receiving region of the substrate, an anti-reflection layer disposed on the photoelectric conversion layer and including a plurality of subsidiary anti-reflection layers, a microlens disposed on the anti-reflection layer, a delamination-preventing layer disposed on the pad region of the substrate, and a wiring layer disposed on the delamination-preventing layer, wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition.

Abstract: An image sensor includes a semiconductor layer including a first surface and a second surface, which are opposite to each other. A plurality of unit pixels is in the semiconductor layer. Each of the unit pixels includes a first photoelectric converter and a second photoelectric converter. A first isolation layer isolates adjacent unit pixels from one another. A second isolation layer is between the first photoelectric converter and the second photoelectric converter. The first isolation layer has a different shape from the second isolation layer.

Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

Abstract: An image sensor includes a semiconductor layer including a first surface and a second surface, which are opposite to each other. A plurality of unit pixels is in the semiconductor layer. Each of the unit pixels includes a first photoelectric converter and a second photoelectric converter. A first isolation layer isolates adjacent unit pixels from one another. A second isolation layer is between the first photoelectric converter and the second photoelectric converter. The first isolation layer has a different shape from the second isolation layer.

Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

Abstract: A method of controlling a memory system that comprises a first flash memory device and a memory controller, the method comprising counting a first timeout when a sudden power off occurs, resetting the first flash memory device when the first timeout expires, and dumping data to the first flash memory device.

Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

Abstract: A data processing device for a storage device can include a dictionary storage unit that is configured to store a plurality of dictionaries and a compression unit that is configured to determine a selected dictionary from the plurality of dictionaries based on received data, and compress the received data using the selected dictionary to provide compressed data. Each of the plurality of dictionaries can include a plurality of pattern-symbol correspondence relations defining a one-to-one correspondence between respective ones of a plurality of patterns and respective ones of a plurality of symbols.

Abstract: A redundant array of inexpensive or independent disks (RAID) memory system comprises a nonvolatile memory device and a memory controller. The nonvolatile memory comprises a stripe block. The memory controller determines a value based on at least one of a program/erase (P/E) cycle and a read error frequency of the stripe block and determines whether to change a size of the stripe block based on the determined value.

Abstract: A method of controlling a memory system that comprises a first flash memory device and a memory controller, the method comprising counting a first timeout when a sudden power off occurs, resetting the first flash memory device when the first timeout expires, and dumping data to the first flash memory device.

Abstract: According to an aspect of the inventive concepts, there is provided a non-volatile memory device including a memory array with at least one stripe. The at least one stripe includes at least one parity page and at least one data page. The non-volatile memory device further includes a chip controller. The chip controller includes an operation module configured to perform an operation on data input from the outside of the memory device, to store a result of the performing, and to program the result of the performing into the at least one parity page. The chip controller further includes a data buffer configured to store the input data and to program the input data into the at least one data page.

Abstract: A data processing device for a storage device can include a dictionary storage unit that is configured to store a plurality of dictionaries and a compression unit that is configured to determine a selected dictionary from the plurality of dictionaries based on received data, and compress the received data using the selected dictionary to provide compressed data. Each of the plurality of dictionaries can include a plurality of pattern-symbol correspondence relations defining a one-to-one correspondence between respective ones of a plurality of patterns and respective ones of a plurality of symbols.

Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.