Abstract: An image sensing device includes a pixel circuit, a readout circuit, and a row driver. The pixel circuit is configured to output a pixel signal in response to a selection signal. The readout circuit is configured to output a digital signal corresponding to the pixel signal, generate a gain control signal based on a first pixel signal received from the pixel circuit, provide the gain control signal to the pixel circuit, receive a second pixel signal output by the pixel circuit using the gain control signal, and output a digital signal corresponding to the second pixel signal. The row driver is configured to provide the selection signal to the pixel circuit while maintaining the selection signal at a first level while the readout circuit provides the gain control signal to the pixel circuit and the pixel circuit outputs the second pixel signal to the readout circuit.

Abstract: A unit pixel includes first and second photoelectric conversion units, a first transfer transistor disposed between the first photoelectric conversion unit and a first node, a first capacitor connected to the first node through a first switch transistor, and a second transfer transistor disposed between the second photoelectric conversion unit and the first node. A signal including a first voltage level is applied to the first transfer transistor and the second transfer transistor during a first time interval, a signal including a second voltage level is applied to the first transfer transistor, the second transfer transistor, and the first switch transistor during a second time interval, a signal including a third voltage level is applied to the first transfer transistor during a third time interval, and the signal including the first voltage level is applied to the second transfer transistor and the first switch transistor during a fourth time interval.

Abstract: A digital pixel sensor for correcting and reducing a mismatch between a pixel and an analog digital converter provided. The digital pixel sensor includes a pixel array including a plurality of pixels; and a bank disposed on the pixel array. The bank includes: a plurality of comparators disposed on the plurality of pixels and configured to compare each of a plurality of pixel signals output from the plurality of pixels with a reference signal to output a plurality of comparison result signals; and a counter connected to the plurality of comparators, and configured to receive the plurality of comparison result signals and latch count code based on the plurality of comparison result signals.

Abstract: An image sensor device includes a digital pixel that includes a photo detector, a comparator, and a memory circuit, a pixel driver that controls the digital pixel, and a digital logic circuit that performs a digital signal processing operation on a digital signal output from the digital pixel. The photo detector and a first portion of the comparator are formed in a first semiconductor die, a second portion of the comparator, the memory circuit, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.

Abstract: A digital pixel includes a photo diode connected to a first node and configured to generate an optical signal from an incident light, a storage diode configured to store the optical signal in a second node, a floating diffusion node configured to output a detection signal based on the optical signal, a first transmission transistor connected between the first and second nodes, and configured to transmit the optical signal from the first node to the second node, a second transmission transistor connected between the second node and the floating diffusion node, and configured to transmit the optical signal from the second node to the floating diffusion node, and a discharge transistor connected to the first node and configured to be turned on in a section in which the second transmission transistor is turned on to discharge a parasitic charge generated in the first node.

Abstract: An image sensor device includes a digital pixel that includes a photo detector, a comparator, and a memory circuit, a pixel driver that controls the digital pixel, and a digital logic circuit that performs a digital signal processing operation on a digital signal output from the digital pixel. The photo detector and a first portion of the comparator are formed in a first semiconductor die, a second portion of the comparator, the memory circuit, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.

Abstract: A digital pixel sensor for correcting and reducing a mismatch between a pixel and an analog digital converter provided. The digital pixel sensor includes a pixel array including a plurality of pixels; and a bank disposed on the pixel array. The bank includes: a plurality of comparators disposed on the plurality of pixels and configured to compare each of a plurality of pixel signals output from the plurality of pixels with a reference signal to output a plurality of comparison result signals; and a counter connected to the plurality of comparators, and configured to receive the plurality of comparison result signals and latch count code based on the plurality of comparison result signals.

Abstract: An image sensing device includes a pixel circuit, a readout circuit, and a row driver. The pixel circuit is configured to output a pixel signal in response to a selection signal. The readout circuit is configured to output a digital signal corresponding to the pixel signal, generate a gain control signal based on a first pixel signal received from the pixel circuit, provide the gain control signal to the pixel circuit, receive a second pixel signal output by the pixel circuit using the gain control signal, and output a digital signal corresponding to the second pixel signal. The row driver is configured to provide the selection signal to the pixel circuit while maintaining the selection signal at a first level while the readout circuit provides the gain control signal to the pixel circuit and the pixel circuit outputs the second pixel signal to the readout circuit.

Abstract: An image sensing device includes a pixel circuit, a readout circuit, and a row driver. The pixel circuit is configured to output a pixel signal in response to a selection signal. The readout circuit is configured to output a digital signal corresponding to the pixel signal, generate a gain control signal based on a first pixel signal received from the pixel circuit, provide the gain control signal to the pixel circuit, receive a second pixel signal output by the pixel circuit using the gain control signal, and output a digital signal corresponding to the second pixel signal. The row driver is configured to provide the selection signal to the pixel circuit while maintaining the selection signal at a first level while the readout circuit provides the gain control signal to the pixel circuit and the pixel circuit outputs the second pixel signal to the readout circuit.

Abstract: An image sensing device includes a pixel circuit, a readout circuit, and a row driver. The pixel circuit is configured to output a pixel signal in response to a selection signal. The readout circuit is configured to output a digital signal corresponding to the pixel signal, generate a gain control signal based on a first pixel signal received from the pixel circuit, provide the gain control signal to the pixel circuit, receive a second pixel signal output by the pixel circuit using the gain control signal, and output a digital signal corresponding to the second pixel signal. The row driver is configured to provide the selection signal to the pixel circuit while maintaining the selection signal at a first level while the readout circuit provides the gain control signal to the pixel circuit and the pixel circuit outputs the second pixel signal to the readout circuit.

Abstract: An image sensor includes a plurality of pixels. Each of the plurality of pixels includes a photodetector that includes a photoelectric conversion element that outputs a detection signal in response to light incident thereon, a comparator that compares the detection signal of the photodetector with a ramp signal and outputs a comparison signal in response thereto, a plurality of first memory cells that store a first counting value corresponding to a first voltage level of the detection signal using the comparison signal of the comparator and output the first counting value through a plurality of transmission lines, and a plurality of second memory cells that store a second counting value corresponding to a second voltage level of the detection signal using the comparison signal of the comparator and output the second counting value through the plurality of transmission lines.

Abstract: A semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface. A device isolation layer which defines a first region, a second region, and a support region in the substrate. The second region has a smaller width than the first region, and the support region is between the first region and the second region. A photoelectric conversion element is in the first region. The support region is continuous with the first region and the second region. The device isolation layer has an integral insulation structure which extends through the substrate from the first surface of the substrate to the second surface of the substrate.

Abstract: A digital pixel includes a photo diode connected to a first node and configured to generate an optical signal from an incident light, a storage diode configured to store the optical signal in a second node, a floating diffusion node configured to output a detection signal based on the optical signal, a first transmission transistor connected between the first and second nodes, and configured to transmit the optical signal from the first node to the second node, a second transmission transistor connected between the second node and the floating diffusion node, and configured to transmit the optical signal from the second node to the floating diffusion node, and a discharge transistor connected to the first node and configured to be turned on in a section in which the second transmission transistor is turned on to discharge a parasitic charge generated in the first node.

Abstract: A semiconductor device and an image sensor, the semiconductor device including a substrate; a photoelectric conversion device in the substrate; a first floating diffusion region adjacent to the photoelectric conversion device; a transfer transistor connected to the photoelectric conversion device and the first floating diffusion region; a reset transistor connected to the first floating diffusion region; a dual conversion gain (DCG) transistor between the first floating diffusion region and the reset transistor; a second floating diffusion region between the DCG transistor and the reset transistor; and an extension pattern, a first portion of the extension pattern being in contact with the second floating diffusion region.

Abstract: A semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface. A device isolation layer which defines a first region, a second region, and a support region in the substrate. The second region has a smaller width than the first region, and the support region is between the first region and the second region. A photoelectric conversion element is in the first region. The support region is continuous with the first region and the second region. The device isolation layer has an integral insulation structure which extends through the substrate from the first surface of the substrate to the second surface of the substrate.

Abstract: An image sensor includes a plurality of pixels. Each of the plurality of pixels includes a photodetector that includes a photoelectric conversion element that outputs a detection signal in response to light incident thereon, a comparator that compares the detection signal of the photodetector with a ramp signal and outputs a comparison signal in response thereto, a plurality of first memory cells that store a first counting value corresponding to a first voltage level of the detection signal using the comparison signal of the comparator and output the first counting value through a plurality of transmission lines, and a plurality of second memory cells that store a second counting value corresponding to a second voltage level of the detection signal using the comparison signal of the comparator and output the second counting value through the plurality of transmission lines.

Abstract: An image sensor device includes a digital pixel that includes a photo detector, a comparator, and a memory circuit, a pixel driver that controls the digital pixel, and a digital logic circuit that performs a digital signal processing operation on a digital signal output from the digital pixel. The photo detector and a first portion of the comparator are formed in a first semiconductor die, a second portion of the comparator, the memory circuit, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.

Abstract: A semiconductor device and an image sensor, the semiconductor device including a substrate; a photoelectric conversion device in the substrate; a first floating diffusion region adjacent to the photoelectric conversion device; a transfer transistor connected to the photoelectric conversion device and the first floating diffusion region; a reset transistor connected to the first floating diffusion region; a dual conversion gain (DCG) transistor between the first floating diffusion region and the reset transistor; a second floating diffusion region between the DCG transistor and the reset transistor; and an extension pattern, a first portion of the extension pattern being in contact with the second floating diffusion region.

Abstract: In a photoelectric-conversion element having a large light receiving region for a high-speed transfer, and a solid-state image sensor including the photoelectric-conversion element, the photoelectric-conversion element includes first to eighth charge read-out regions, which are provided at positions symmetric with respect to a center position of a light receiving region and first to eighth field-control electrodes, which are arranged on both sides of charge-transport paths extending from the center position of the light receiving region to the first to eighth charge read-out regions, respectively, and change depletion potentials of the charge-transport paths and the octuple charge-transfer channels.

Abstract: A semiconductor element includes a semiconductor region (11) of a first conductivity type, a buried charge-generation region (16) of a second conductivity type, buried in an upper portion of the semiconductor region (11) to implement a photodiode (D1) together with the semiconductor region (11) to generate charges, a charge-readout region (15) of the second conductivity type, provided in the semiconductor region (11) to accumulate the charges transferred from the buried charge-generation region (16), and a reset-performing region (12) of the second conductivity type, provided in the semiconductor region (11), a variable voltage is applied to the reset-performing region (12) to change the height of a potential barrier generated in the semiconductor region (11) sandwiched between the charge-readout region (15) and the reset-performing region (12) to exhaust the charges accumulated in the charge-readout region (15).