Patents by Inventor Min Yi WU

Min Yi WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TRANSISTOR INCLUDING A HYDROGEN-DIFFUSION BARRIER AND METHODS FOR FORMING THE SAME
    Publication number: 20240162318
    Abstract: A thin film transistor includes a gate electrode embedded in an insulating layer that overlies a substrate, a gate dielectric overlying the gate electrode, an active layer comprising a compound semiconductor material and overlying the gate dielectric, and a source electrode and drain electrode contacting end portions of the active layer. The gate dielectric may have thicker portions over interfaces with the insulating layer to suppress hydrogen diffusion therethrough. Additionally or alternatively, a passivation capping dielectric including a dielectric metal oxide material may be interposed between the active layer and a dielectric layer overlying the active layer to suppress hydrogen diffusion therethrough.
    Type: Application
    Filed: January 26, 2024
    Publication date: May 16, 2024
    Inventors: Min-Kun DAI, Wei-Gang CHIU, I-Cheng CHANG, Cheng-Yi WU, Han-Ting TSAI, Tsann LIN, Chung-Te LIN
  • Transistor including a hydrogen-diffusion barrier and methods for forming the same
    Patent number: 11935935
    Abstract: A thin film transistor includes a gate electrode embedded in an insulating layer that overlies a substrate, a gate dielectric overlying the gate electrode, an active layer comprising a compound semiconductor material and overlying the gate dielectric, and a source electrode and drain electrode contacting end portions of the active layer. The gate dielectric may have thicker portions over interfaces with the insulating layer to suppress hydrogen diffusion therethrough. Additionally or alternatively, a passivation capping dielectric including a dielectric metal oxide material may be interposed between the active layer and a dielectric layer overlying the active layer to suppress hydrogen diffusion therethrough.
    Type: Grant
    Filed: November 11, 2021
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Min-Kun Dai, Wei-Gang Chiu, I-Cheng Chang, Cheng-Yi Wu, Han-Ting Tsai, Tsann Lin, Chung-Te Lin
  • Compositions and additives for degrading plastic
    Patent number: 11692089
    Abstract: A chemical composition for use with polyvinyl chloride that may be used to increase the rate at which the polyvinyl chloride breaks down or disintegrates after being discarded as the surface gradually forms defects, holes, or cracks, including when in a landfill, wherein the chemical composition includes the chemicals PBAT, PCL, EVA, CPE, PLA, PGA, PHA, PHB, PE, PVA, PBS, PPC, and PET.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: July 4, 2023
    Assignee: Green Land Technology Co., Inc.
    Inventors: Min Yi Wu, Chaoxiong Wu
  • COMPOSITIONS AND ADDITIVES FOR DEGRADING PLASTIC
    Publication number: 20210155789
    Abstract: A chemical composition for use with polyvinyl chloride that may be used to increase the rate at which the polyvinyl chloride breaks down or disintegrates after being discarded as the surface gradually forms defects, holes, or cracks, including when in a landfill, wherein the chemical composition includes the chemicals PBAT, PCL, EVA, CPE, PLA, PGA, PHA, PHB, PE, PVA, PBS, PPC, and PET.
    Type: Application
    Filed: March 12, 2020
    Publication date: May 27, 2021
    Inventors: Min Yi WU, Chaoxiong WU