Abstract: The present invention relates to a Bacillus amyloliquefaciens K317 strain suppressing the growth of antibiotics-resistant pathogenic microorganisms or enteropathogenic microorganisms, more precisely a Bacillus amyloliquefaciens K317 strain, a culture supernatant thereof and an antibacterial metabolite separated from the same. The Bacillus amyloliquefaciens K317 strain, the culture supernatant thereof and the antibacterial metabolite separated from the same of the invention can be effectively used for the composition, health food, and probiotics for inhibiting the growth of antibiotics-resistant pathogenic microorganisms and enteropathogenic microorganisms, since they have excellent antibacterial activity and inhibition effect on the growth of methicillin resistant pathogenic microorganism and such enteropathogenic microorganism as Edwardsiella tarda, E. coli and Staphylococcus epidermidis.

Abstract: A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.

Abstract: A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer metal interconnections which are located between the multi-layer interlayer dielectric layers. A cavity which penetrates the multi-layer interlayer dielectric layers on the photoelectric transformation device is formed. A heat treatment is performed on the substrate on which the cavity is formed.

Abstract: An image sensor includes a photoelectric converter, a source-follower transistor, and a selection transistor. The photoelectric converter generates electric charge in response to received light, and the electric charge varies a voltage of a detection node. The source-follower transistor is coupled between the detection node and an output node and has a first threshold voltage. The selection transistor is coupled between the source-follower transistor and a voltage node with a power supply voltage or a boosted voltage applied thereon, and has a second threshold voltage with a magnitude that is less than a magnitude of the first threshold voltage such that the source-follower transistor operates in saturation.