Abstract: A method and system for producing an adjustable resistor with a set resistance for adjusting quiescent current in a GaN transistor in a power amplifier. A quiescent current on the GaN power amplifier is measured via a test probe from a microcontroller unit on a test fixture. A resistance value is determined for output of a voltage bias value to adjust the quiescent current of the GaN transistor in the power amplifier. The resistance value is stored in an electronically adjustable resistor. The adjustable resistor is coupled to an output voltage circuit to provide voltage at the voltage vias value to a voltage bias input of the power amplifier.

Abstract: A composite interposer includes a local-silicon-interconnect-containing (LSI-containing) interposer that includes a local silicon interconnect (LSI) bridge; and an organic interposer located on the LSI-containing interposer, including redistribution dielectric layers embedding redistribution wiring interconnects and a metallic counter-deformation structure. The metallic counter-deformation structure includes a plurality of metallic via structures; a first metallic plate located on a first side of the plurality of metallic via structures; and a second metallic plate located on a second side of the plurality metallic via structures and vertically spaced from the first metallic plate.

Abstract: A transparent conductive film is disclosed. The transparent conductive film includes a substrate; a first silver nanowire layer disposed on the substrate; and a protective layer disposed on the first silver nanowire layer, wherein the protective layer is a patternable photoresist and has an identical pattern as the first silver nanowire layer.

Abstract: A transparent conductive film is disclosed. The transparent conductive film includes a substrate and a first silver nanowire layer. The transparent conductive film has a first absorption peak at 340 nm to 400 nm and a second absorption peak at 500 nm-650 nm, and a ratio of a maximum peak intensity of the first absorption peak to a maximum peak intensity of the second absorption peak is in a range of 2 to 5.5.

Abstract: A transparent conductive film is disclosed. The transparent conductive film includes a substrate and a first silver nanowire layer. The transparent conductive film has a first absorption peak at 340 nm to 400 nm and a second absorption peak at 500 nm-650 nm, and a ratio of a maximum peak intensity of the first absorption peak to a maximum peak intensity of the second absorption peak is in a range of 2 to 5.5.

Abstract: A transparent conductive film is disclosed. The transparent conductive film includes a substrate and a first silver nanowire layer. The transparent conductive film has a first absorption peak at 340 nm to 400 nm and a second absorption peak at 500 nm-650 nm, and a ratio of a maximum peak intensity of the first absorption peak to a maximum peak intensity of the second absorption peak is in a range of 2 to 5.5.

Abstract: A hanger for an electronic apparatus. The hanger comprises a base mounted to a wall, a bracket pivoting on the base, a first link pivoting on the base and comprising a ratchet with a plurality of teeth, and a second link with a stopper rotatably connecting the first link and the bracket. The angle between the bracket and the base is varied by the stopper engaging each tooth of the ratchet. The bracket can rotate between a first position and a second position. When the bracket is in the first position, the bracket overlaps the base, and in the second position, the angle between the bracket and the base is maximized.

Abstract: A hanger for an electronic apparatus. The hanger comprises a base mounted to a wall, a bracket pivoting on the base, a first link pivoting on the base and comprising a ratchet with a plurality of teeth, and a second link with a stopper rotatably connecting the first link and the bracket. The angle between the bracket and the base is varied by the stopper engaging each tooth of the ratchet. The bracket can rotate between a first position and a second position. When the bracket is in the first position, the bracket overlaps the base, and in the second position, the angle between the bracket and the base is maximized.