Abstract: A retrofitting method for a beam with an opening is disclosed. The retrofitting method provides a hoop cooperated with an inclined stirrup to form a reinforcement set. The hoop is used to enclose the opening; and the reinforcement set may be selectively adjusted according to the distance between the edge of opening and a column face. The retrofitting method and reinforcement set are not only suitable for openings located in the non-plastic hinge zone of the beam, but also suitable for the openings located in the plastic hinge zone.

Abstract: A retrofitting method for a beam with an opening is disclosed. The retrofitting method provides a hoop cooperated with an inclined stirrup to form a reinforcement set. The hoop is used to enclose the opening; and the reinforcement set may be selectively adjusted according to the distance between the edge of opening and a column face. The retrofitting method and reinforcement set are not only suitable for openings located in the non-plastic hinge zone of the beam, but also suitable for the openings located in the plastic hinge zone.

Abstract: A new type of reinforced concrete coupling beam confined by discontinuous steel plates is proposed. The proposed coupling beam confined includes longitudinal reinforcements, transverse reinforcements, concrete, and first and second web side steel plates. Longitudinal reinforcements are placed along the first direction. Transverse reinforcements are placed perpendicular to the first direction and to enclose the longitudinal reinforcements. Longitudinal reinforcements and transverse reinforcements are embedded in the concrete to form a reinforced concrete coupling beam. The reinforced concrete coupling beam has first and second surfaces opposite to each other on web sides, and third and fourth surfaces opposite to each other on flange sides. The first web side steel plate is placed on the first surface of the reinforced concrete coupling beam. The second web side steel plate is placed on the second surface of the reinforced concrete coupling beam.

Abstract: A high-tensile belt-type tag including a belt, a high-tensile transmission line, an antenna and a radio frequency identification (RFID) chip is provided, wherein the belt includes a belt body and a retaining ring. The belt body is suitable to slip into an opening of the retaining ring and preventing the belt body from slipping out of the opening. The high-tensile transmission line, the antenna and the RFID chip are disposed in the belt, and the high-tensile transmission line encircles the whole belt in accordance with a shape of the belt. Moreover, the RFID chip is coupled to the antenna through the high-tensile transmission line, wherein when the high-tensile transmission line is split as the belt is cut off, the RFID chip cannot delivers an identification code through the antenna due to split of the high-tensile transmission line.

Abstract: A high-tensile belt-type tag including a belt, a high-tensile transmission line, an antenna and a radio frequency identification (RFID) chip is provided, wherein the belt includes a belt body and a retaining ring. The belt body is suitable to slip into an opening of the retaining ring and preventing the belt body from slipping out of the opening. The high-tensile transmission line, the antenna and the RFID chip are disposed in the belt, and the high-tensile transmission line encircles the whole belt in accordance with a shape of the belt. Moreover, the RFID chip is coupled to the antenna through the high-tensile transmission line, wherein when the high-tensile transmission line is split as the belt is cut off, the RFID chip cannot delivers an identification code through the antenna due to split of the high-tensile transmission line.

Abstract: A method for monitoring copper film quality and for evaluating the annealing efficiency of a copper annealing process includes measuring hardness of a copper film formed on a substrate before and after annealing and comparing the hardness measurement results. The measurements can be correlated to grain boundary saturation levels, copper grain sizes and therefore conductivity. Hardness measurements may be taken at a plurality of locations throughout the substrate to account for variations in the copper film grain structure.

Abstract: A method of forming a metal layer with reduced defects comprising providing a structure having a dielectric layer formed over it, forming a dielectric layer having an opening, lining the opening with a metal seed layer, treating the metal seed layer with a cleaning process to remove contaminates from it, and forming a metal layer upon the metal seed layer.

Abstract: A wafer cleaning system is provided. The wafer cleaning system comprises a first brush, a second brush, a brush motor, and a controller. The second brush is positioned parallel to the first brush. The brush motor moves at least one of the first and second brushes from a first position to a second position according to a driving current of the brush motor.

Abstract: A method for forming a microelectronic layer while employing a sputtering method employs a reactor chamber. A sputtering target and a substrate are positioned within the reactor chamber, along with a sputtering target heater at a side of sputtering target opposite the substrate. At least one of: (1) a heater to sputtering target distance; (2) sputtering power; (3) deposition time; and (4) sputtering gas flow rate, is controlled in accord with a pre-determined function of sputtering target lifetime to provide enhanced uniformity of the deposited layer.

Abstract: A method of forming a metal layer with reduced defects comprising providing a structure having a dielectric layer formed over it, forming a dielectric layer having an opening, lining the opening with a metal seed layer, treating the metal seed layer with a cleaning process to remove contaminates from it, and forming a metal layer upon the metal seed layer.

Abstract: A method for monitoring copper film quality and for evaluating the annealing efficiency of a copper annealing process includes measuring hardness of a copper film formed on a substrate before and after annealing and comparing the hardness measurement results. The measurements can be correlated to grain boundary saturation levels, copper grain sizes and therefore conductivity. Hardness measurements may be taken at a plurality of locations throughout the substrate to account for variations in the copper film grain structure.