Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: Disclosed herein are related to performing layout verification of a layout design of an integrated circuit having a slanted layout component. In one aspect, the slanted layout component having a side slanted from a base axis is detected. In one aspect, an offset angle of the side of the slanted layout component with respect to the base axis is determined. In one aspect, the slanted layout component is rotated according to the offset angle to obtain a rotated layout component. The rotated layout component may have a rotated side in parallel with or perpendicular to the base axis. In one aspect, layout verification can be performed on the rotated layout component with respect to the base axis.

Abstract: Boundary cells may be provided. A boundary of a first functional cell of a circuit is determined. A first plurality of a first type of dummy cells are placed along a first portion of the determined boundary. The first portion extends in a first direction. Each of the first type of dummy cells comprises first pre-defined dimensions. A second plurality of a second type of dummy cells are placed along a second portion of the determined boundary. The second portion extends in a second direction. Each of the second type of dummy cells comprises second pre-defined dimensions. The second pre-defined dimensions is different than the first pre-defined dimensions.

Abstract: A method of manufacturing an integrated circuit includes adjusting a first spacing between an adjacent pair of routing tracks in a first set of routing tracks to be equal to a second spacing, adjusting a third spacing between an adjacent pair of routing tracks in a second set of routing tracks to be equal to a fourth spacing, placing a first and second pair of conductive patterns on the corresponding first and second set of routing tracks, forming a first set of conductive structures based on the first pair of conductive patterns, and a second set of conductive structures based on the second pair of conductive patterns. A first and second cell have a same cell height that is a non-integer multiple of a minimum pitch. One spacing of a first set of spacings is different from another spacing of the first set of spacings.

Abstract: Boundary cells may be provided. A boundary of a first functional cell of a circuit is determined. A first plurality of a first type of dummy cells are placed along a first portion of the determined boundary. The first portion extends in a first direction. Each of the first type of dummy cells comprises first pre-defined dimensions. A second plurality of a second type of dummy cells are placed along a second portion of the determined boundary. The second portion extends in a second direction. Each of the second type of dummy cells comprises second pre-defined dimensions. The second pre-defined dimensions is different than the first pre-defined dimensions.

Abstract: Disclosed herein are related to performing layout verification of a layout design of an integrated circuit having a slanted layout component. In one aspect, the slanted layout component having a side slanted from a base axis is detected. In one aspect, an offset angle of the side of the slanted layout component with respect to the base axis is determined. In one aspect, the slanted layout component is rotated according to the offset angle to obtain a rotated layout component. The rotated layout component may have a rotated side in parallel with or perpendicular to the base axis. In one aspect, layout verification can be performed on the rotated layout component with respect to the base axis.

Abstract: An IC device includes an interlayer dielectric (ILD), a first tower structure embedded in the ILD, and a first ring region including a portion of the ILD that extends around the first tower structure. The first tower structure includes a plurality of first conductive patterns in a plurality of metal layers, and a plurality of first vias between the plurality of metal layers along a thickness direction of the IC device. The plurality of first conductive patterns and the plurality of first vias are coupled to each other to form the first tower structure. The plurality of first conductive patterns is confined by the first ring region, without extending beyond the first ring region. The first tower structure is a dummy tower structure.

Abstract: A method of manufacturing an integrated circuit includes adjusting a first spacing between an adjacent pair of routing tracks in a first set of routing tracks to be equal to a second spacing, adjusting a third spacing between an adjacent pair of routing tracks in a second set of routing tracks to be equal to a fourth spacing, placing a first and second pair of conductive patterns on the corresponding first and second set of routing tracks, forming a first set of conductive structures based on the first pair of conductive patterns, and a second set of conductive structures based on the second pair of conductive patterns. A first and second cell have a same cell height that is a non-integer multiple of a minimum pitch. One spacing of a first set of spacings is different from another spacing of the first set of spacings.

Abstract: A method of manufacturing an integrated circuit includes generating a layout of a first and a second cell, adjusting a first spacing between an adjacent pair of routing tracks in a first set of routing tracks to be equal to a second spacing, adjusting a third spacing between an adjacent pair of routing tracks in a second set of routing tracks to be equal to a fourth spacing, placing a first pair of conductive patterns on the first set of routing tracks, placing a second pair of conductive patterns on the second set of routing tracks, forming a first set of conductive structures based on the first pair of conductive patterns, and forming a second set of conductive structures based on the second pair of conductive patterns. The first and second cell have a same cell height that is a non-integer multiple of a minimum pitch.

Abstract: Boundary cells may be provided. A boundary of a first functional cell of a circuit is determined. A first plurality of a first type of dummy cells are placed along a first portion of the determined boundary. The first portion extends in a first direction. Each of the first type of dummy cells comprises first pre-defined dimensions. A second plurality of a second type of dummy cells are placed along a second portion of the determined boundary. The second portion extends in a second direction. Each of the second type of dummy cells comprises second pre-defined dimensions. The second pre-defined dimensions is different than the first pre-defined dimensions.

Abstract: Boundary cells may be provided. A boundary of a first functional cell of a circuit is determined. A first plurality of a first type of dummy cells are placed along a first portion of the determined boundary. The first portion extends in a first direction. Each of the first type of dummy cells comprises first pre-defined dimensions. A second plurality of a second type of dummy cells are placed along a second portion of the determined boundary. The second portion extends in a second direction. Each of the second type of dummy cells comprises second pre-defined dimensions. The second pre-defined dimensions is different than the first pre-defined dimensions.

Abstract: A method of manufacturing an integrated circuit includes generating a layout of a first and a second cell, adjusting a first spacing between an adjacent pair of routing tracks in a first set of routing tracks to be equal to a second spacing, adjusting a third spacing between an adjacent pair of routing tracks in a second set of routing tracks to be equal to a fourth spacing, placing a first pair of conductive patterns on the first set of routing tracks, placing a second pair of conductive patterns on the second set of routing tracks, forming a first set of conductive structures based on the first pair of conductive patterns, and forming a second set of conductive structures based on the second pair of conductive patterns. The first and second cell have a same cell height that is a non-integer multiple of a minimum pitch.

Abstract: A method of manufacturing an integrated circuit includes identifying a first cell of a layout, placing a first pair of conductive patterns on a first set of routing tracks, placing a second pair of conductive patterns on a second set of routing tracks, and forming, by a first mask, a first set of conductive structures based on the first pair or second pair of conductive patterns. The first cell abuts a second cell. The first cell has a first set of routing tracks. The second cell has a second set of routing tracks. The first and second cell have a same cell height that is a non-integer multiple of a minimum pitch. A top and bottom boundary of the first cell overlaps a pair of the first set of routing tracks. A top and bottom boundary of the second cell overlaps a pair of the second set of routing tracks.

Abstract: Boundary cells may be provided. A boundary of a first functional cell of a circuit is determined. A first plurality of a first type of dummy cells are placed along a first portion of the determined boundary. The first portion extends in a first direction. Each of the first type of dummy cells comprises first pre-defined dimensions. A second plurality of a second type of dummy cells are placed along a second portion of the determined boundary. The second portion extends in a second direction. Each of the second type of dummy cells comprises second pre-defined dimensions. The second pre-defined dimensions is different than the first pre-defined dimensions.

Abstract: A method of manufacturing an integrated circuit includes identifying a first cell of a layout, placing a first pair of conductive patterns on a first set of routing tracks, placing a second pair of conductive patterns on a second set of routing tracks, and forming, by a first mask, a first set of conductive structures based on the first pair or second pair of conductive patterns. The first cell abuts a second cell. The first cell has a first set of routing tracks. The second cell has a second set of routing tracks. The first and second cell have a same cell height that is a non-integer multiple of a minimum pitch. A top and bottom boundary of the first cell overlaps a pair of the first set of routing tracks. A top and bottom boundary of the second cell overlaps a pair of the second set of routing tracks.

Abstract: A method of designing a layout includes identifying a cell having a cell height being a non-integral multiple of a minimum pitch, generating, using a processor, possibilities of an ordered arrangement of a plurality of virtual grid lines parallel to the top boundary and the bottom boundary, and placing at least two conductive patterns on the plurality of virtual grid lines. The cell height is defined by a top boundary and a bottom boundary, and the minimum pitch is based on a manufacturing process. The plurality of virtual grid lines are separated from each other by a plurality of spacings, and the top boundary overlaps a first virtual grid line of the plurality of virtual grid lines and the bottom boundary overlaps a second virtual grid line of the plurality of virtual grid lines. At least one spacing is different from another spacing of the plurality of spacings.

Abstract: A method of designing a layout includes identifying a cell having a cell height being a non-integral multiple of a minimum pitch, generating, using a processor, possibilities of an ordered arrangement of a plurality of virtual grid lines parallel to the top boundary and the bottom boundary, and placing at least two conductive patterns on the plurality of virtual grid lines. The cell height is defined by a top boundary and a bottom boundary, and the minimum pitch is based on a manufacturing process. The plurality of virtual grid lines are separated from each other by a plurality of spacings, and the top boundary overlaps a first virtual grid line of the plurality of virtual grid lines and the bottom boundary overlaps a second virtual grid line of the plurality of virtual grid lines. At least one spacing is different from another spacing of the plurality of spacings.

Abstract: Power grids of an IC are provided. A power grid includes first power traces disposed in a first metal layer and parallel to a first direction, second power traces disposed in a second metal layer and parallel to a second direction that is perpendicular to the first direction, and third power traces disposed in the first metal layer parallel to the first direction. The first power traces arranged in the same straight line are separated from each other by a plurality of first gaps. The third power traces arranged in the same straight line are separated from each other by a plurality of second gaps. Each first gap is surrounded by the two adjacent third power traces. Each second gap is surrounded by the two adjacent first power traces. The first power traces are coupled to the third power traces via the second power traces.

Abstract: Provided is a method for evaluating and decomposing a semiconductor device level for triple pattern lithography in semiconductor manufacturing. The method includes generating a conflict graph and simplifying the conflict graph using various methods to produce a simplified conflict graph which can either be further simplified or evaluated for decomposition validity. The disclosure also provides for applying decomposition validity rules to a simplified conflict graph to determine if the conflict graph represents a semiconductor device layer that is decomposable into three masks. Methods of the disclosure are carried out by a computer and instructions for carrying out the method may be stored on a computer readable storage medium.

Abstract: Provided is a method for evaluating and decomposing a semiconductor device level for triple pattern lithography in semiconductor manufacturing. The method includes generating a conflict graph and simplifying the conflict graph using various methods to produce a simplified conflict graph which can either be further simplified or evaluated for decomposition validity. The disclosure also provides for applying decomposition validity rules to a simplified conflict graph to determine if the conflict graph represents a semiconductor device layer that is decomposable into three masks. Methods of the disclosure are carried out by a computer and instructions for carrying out the method may be stored on a computer readable storage medium.