Abstract: An interlayer insulating film is patterned, contact holes are formed, and in the contact holes, a source contact portion forming an ohmic contact with the silicon carbide body is formed. Thereafter, a titanium film and an aluminum wiring layer are continuously formed in this sequence on the interlayer insulating film and the source contact portion. At this time, the thickness of the titanium film is about 1.0 ?m or less. Thereafter, by heat treatment for curing of a passivation film or heat treatment thereafter, the titanium film and the aluminum wiring layer react, generating a TiAl alloy film between the titanium film and the aluminum wiring layer. The thickness of the TiAl alloy film, for example, is kept to about 1 nm to 100 nm; and the TiAl alloy film and the source contact portion do not contact each other.

Abstract: In a vertical MOSFET having a trench gate structure, a lifetime killer region is provided in a p-type epitaxial layer formed by epitaxial growth. The lifetime killer region includes an electron lifetime killer that causes electrons entering the lifetime killer region to recombine and become extinct. As a result, the lifetime killer region decreases the electrons generated at the pn interface of the p-type epitaxial layer and an n-type drift layer and enables a configuration in which electrons are not delivered to the p-type epitaxial layer.

Abstract: In a vertical MOSFET having a trench gate structure, a lifetime killer region is provided in a p-type epitaxial layer formed by epitaxial growth. The lifetime killer region includes an electron lifetime killer that causes electrons entering the lifetime killer region to recombine and become extinct. As a result, the lifetime killer region decreases the electrons generated at the pn interface of the p-type epitaxial layer and an n-type drift layer and enables a configuration in which electrons are not delivered to the p-type epitaxial layer.

Abstract: A semiconductor device includes on an n-type semiconductor substrate of silicon carbide, an n-type semiconductor layer, a p-type base region, an n-type source region, a p-type contact region, a gate insulating film, a gate electrode, and a source electrode. The semiconductor device has a drain electrode on a back surface of the semiconductor substrate. On a surface of the gate electrode, an interlayer insulating film is disposed. The interlayer insulating film has plural layers among which, one layer is formed by a silicon nitride film. With such a structure, degradation of semiconductor device properties are suppressed. Further, increases in the number of processes at the time of manufacturing are suppressed.

Abstract: A method is disclosed with provides stable growth of SiC single crystals, particularly 4H—SiC single crystals, with an effective crystal growth rate for a prolonged time even at a low temperature range of 2000° C. or lower. A raw material containing Si, Ti and Ni is charged into a crucible made of graphite and heat-melted to obtain a solvent. At the same time, C is dissolved out from the crucible into the solvent to obtain a melt. A SiC seed crystal substrate is then brought into contact with the melt such that SiC is supersaturated in the melt in the vicinity of the surface of the SiC seed crystal substrate, thereby allowing growth and production of an SiC single crystal on the SiC seed crystal substrate.

Abstract: An interlayer insulating film is patterned, contact holes are formed, and in the contact holes, a source contact portion forming an ohmic contact with the silicon carbide body is formed. Thereafter, a titanium film and an aluminum wiring layer are continuously formed in this sequence on the interlayer insulating film and the source contact portion. At this time, the thickness of the titanium film is about 1.0 ?m or less. Thereafter, by heat treatment for curing of a passivation film or heat treatment thereafter, the titanium film and the aluminum wiring layer react, generating a TiAl alloy film between the titanium film and the aluminum wiring layer. The thickness of the TiAl alloy film, for example, is kept to about 1 nm to 100 nm; and the TiAl alloy film and the source contact portion do not contact each other.

Abstract: A semiconductor device includes on an n-type semiconductor substrate of silicon carbide, an n-type semiconductor layer, a p-type base region, an n-type source region, a p-type contact region, a gate insulating film, a gate electrode, and a source electrode. The semiconductor device has a drain electrode on a back surface of the semiconductor substrate. On a surface of the gate electrode, an interlayer insulating film is disposed. The interlayer insulating film has plural layers among which, one layer is formed by a silicon nitride film. With such a structure, degradation of semiconductor device properties are suppressed. Further, increases in the number of processes at the time of manufacturing are suppressed.

Abstract: An ohmic electrode (6) of a silicon carbide semiconductor apparatus is fabricated by forming an ohmic metal film on a silicon carbide substrate (1) by sputtering a target including a mixture or an alloy having therein nickel, and a metal(s) reducing the magnetic permeability of nickel and producing a carbide, where compositional ratios of the mixture or alloy are adjusted to predetermined compositional ratios, and by executing heat treatment for the ohmic metal film to calcinate the ohmic metal film. Thus, the ohmic electrode (6) that is for the silicon carbide semiconductor apparatus and capable of improving the use efficiency of the target can be manufactured, whose film thickness is even and that does not peel off.

Abstract: An ohmic electrode (6) of a silicon carbide semiconductor apparatus is fabricated by forming an ohmic metal film on a silicon carbide substrate (1) by sputtering a target including a mixture or an alloy having therein nickel, and a metal(s) reducing the magnetic permeability of nickel and producing a carbide, where compositional ratios of the mixture or alloy are adjusted to predetermined compositional ratios, and by executing heat treatment for the ohmic metal film to calcinate the ohmic metal film. Thus, the ohmic electrode (6) that is for the silicon carbide semiconductor apparatus and capable of improving the use efficiency of the target can be manufactured, whose film thickness is even and that does not peel off.

Abstract: A method is disclosed with provides stable growth of SiC single crystals, particularly 4H—SiC single crystals, with an effective crystal growth rate for a prolonged time even at a low temperature range of 2000° C. or lower. A raw material containing Si, Ti and Ni is charged into a crucible made of graphite and heat-melted to obtain a solvent. At the same time, C is dissolved out from the crucible into the solvent to obtain a melt. A SiC seed crystal substrate is then brought into contact with the melt such that SiC is supersaturated in the melt in the vicinity of the surface of the SiC seed crystal substrate, thereby allowing growth and production of an SiC single crystal on the SiC seed crystal substrate.