Patents by Inventor Mina Yun

Mina Yun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor having germanium channel on silicon nanowire and fabrication method thereof
    Patent number: 9935189
    Abstract: The present invention provides a transistor and a fabrication method thereof. By a silicon nanowire as a core region being serially wrapped by a germanium channel, a gate insulating film and a gate, the present invention enables to form a potential well for storing holes as a carrier of HHMT in the germanium channel by a valance band energy offset between the silicon core region and the germanium channel, to gain maximum gate controllability to the germanium channel, and to simplify a fabricating process by simultaneously forming the germanium channel and the gate insulating film in one process.
    Type: Grant
    Filed: November 8, 2016
    Date of Patent: April 3, 2018
    Assignee: GACHON UNIVERSITY OF INDUSTRY—ACADEMIC COOPERATION FOUNDATION
    Inventors: Seongjae Cho, Mina Yun
  • TRANSISTOR HAVING GERMANIUM CHANNEL ON SILICON NANOWIRE AND FABRICATION METHOD THEREOF
    Publication number: 20170133495
    Abstract: The present invention provides a transistor and a fabrication method thereof. By a silicon nanowire as a core region being serially wrapped by a germanium channel, a gate insulating film and a gate, the present invention enables to form a potential well for storing holes as a carrier of HHMT in the germanium channel by a valance band energy offset between the silicon core region and the germanium channel, to gain maximum gate controllability to the germanium channel, and to simplify a fabricating process by simultaneously forming the germanium channel and the gate insulating film in one process.
    Type: Application
    Filed: November 8, 2016
    Publication date: May 11, 2017
    Inventors: Seongjae Cho, Mina Yun