Abstract: A semiconductor device capable of detecting a micro-short circuit of a secondary battery is provided. The semiconductor device includes a first source follower, a second source follower, a transistor, a capacitor, and a comparator. A negative electrode potential and a positive electrode potential of the secondary battery are supplied to the semiconductor device, a first potential is input to the first source follower, and a second potential is input to the second source follower. A signal for controlling the conduction state of the transistor is input to a gate of the transistor, and an output potential of the first source follower related to the potential between the positive electrode and the negative electrode of the secondary battery is sampled.

Abstract: A semiconductor device with a novel structure is provided. A first memory circuit portion includes a first memory circuit for retaining a plurality of pieces of first weight data. A second memory circuit portion includes a second memory circuit for retaining a plurality of pieces of second weight data. A first arithmetic circuit portion includes a first arithmetic circuit, a first switching circuit, and a third switching circuit. A second arithmetic circuit portion includes a second arithmetic circuit, a second switching circuit, and a fourth switching circuit. The first switching circuit has a function of supplying any one of the plurality of pieces of the first weight data to a first wiring. The second switching circuit has a function of supplying any one of the plurality of pieces of the second weight data to a second wiring.

Abstract: A semiconductor device that tests and/or monitors each of batteries provided in an assembled battery is provided. The semiconductor device includes a hysteresis comparator and a circuit, and the circuit has a function of setting a high-level side threshold voltage and a low-level side voltage of the hysteresis comparator. The circuit includes first and second capacitors. A first terminal of the first capacitor is electrically connected to a high-level side reference potential input terminal of the hysteresis comparator and a first terminal of the second capacitor is electrically connected to a low-level side reference potential input terminal of the hysteresis comparator.

Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a storage circuit, an arithmetic circuit, and a driver circuit. The arithmetic circuit includes a switching circuit and a product-sum operation circuit. The storage circuit includes a first storage region and a second storage region. The first storage region has a function of retaining first storage data. The second storage region has a function of retaining second storage data. The switching circuit has a function of outputting the first storage data or the second storage data to the product-sum operation circuit. The driver circuit has a function of outputting first input data or second input data to the product-sum operation circuit. The product-sum operation circuit has a function of retaining first output data obtained by arithmetic processing performed on the first input data and the first storage data selected by the switching circuit.

Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a plurality of memory circuits, a switching circuit, a first arithmetic circuit, and a second arithmetic circuit. The plurality of memory circuits each have a function of retaining weight data. The switching circuit has a function of switching electrical continuity and discontinuity between any one of the memory circuits and the first arithmetic circuit. The first arithmetic circuit outputs a first output signal based on product-sum operation processing of input data and the weight data selected by the switching circuit to the second arithmetic circuit. A layer including the plurality of memory circuits is provided to be stacked over a layer including the switching circuit, the first arithmetic circuit, and the second arithmetic circuit.

Abstract: The circuit layout generation system includes a memory portion, a limitation data arithmetic portion, and a layout data arithmetic portion. The memory portion is configured to store circuit connection data and first limitation data. The circuit connection data is data regarding connection of a transistor and a capacitor included in a pixel circuit. The first limitation data includes data that determines a wiring interval of the transistor and a wiring interval of the capacitor and data that determines placement coordinates of the transistor and the capacitor. The limitation data arithmetic portion is configured to generate second limitation data on the basis of the circuit connection data and the first limitation data and store the second limitation data in the memory portion. The second limitation data is data that determines the placement of the transistor and the capacitor designated by the placement coordinates so that the transistor and the capacitor are positioned close to each other.

Abstract: A semiconductor device that functions as a relay station and is reduced in size is provided. The semiconductor device includes an operational amplifier, a first transistor and a first capacitor that are electrically connected to a first input side of the operational amplifier, and a first resistor and a second resistor that are electrically connected to a second input side. The second resistor is electrically connected to an output side of the operational amplifier, a gate of the first transistor is electrically connected to a first power supply, the first resistor is electrically connected to a second power supply, and at least a transistor included in the operational amplifier has a region overlapping with the first transistor.

Abstract: A semiconductor device capable of level shifting in a negative potential direction using an n-channel transistor is provided. The semiconductor device includes a first source follower, a second source follower, and a comparator. The first source follower is supplied with a second high power supply potential and a low power supply potential; the second source follower is supplied with a first high power supply potential and the low power supply potential; and a digital signal which expresses a high level or a low level using the second high power supply potential or the first high power supply potential is input to the first source follower. Here, the second high power supply potential is a potential higher than the first high power supply potential, and the first high power supply potential is a potential higher than the low power supply potential.

Abstract: A semiconductor device capable of detecting a micro-short circuit of a secondary battery is provided. The semiconductor device includes a first source follower, a second source follower, a transistor, a capacitor, and a comparator. A negative electrode potential and a positive electrode potential of the secondary battery are supplied to the semiconductor device, a first potential is input to the first source follower, and a second potential is input to the second source follower. A signal for controlling the conduction state of the transistor is input to a gate of the transistor, and an output potential of the first source follower related to the potential between the positive electrode and the negative electrode of the secondary battery is sampled.

Abstract: A semiconductor device that tests and/or monitors each of batteries provided in an assembled battery is provided. The semiconductor device includes a hysteresis comparator and a circuit, and the circuit has a function of setting a high-level side threshold voltage and a low-level side voltage of the hysteresis comparator. The circuit includes first and second capacitors. A first terminal of the first capacitor is electrically connected to a high-level side reference potential input terminal of the hysteresis comparator and a first terminal of the second capacitor is electrically connected to a low-level side reference potential input terminal of the hysteresis comparator.

Abstract: A semiconductor device with reduced power consumption is provided. The semiconductor device includes a node ND1, a node ND2, a resistor, a capacitor, and a comparison circuit. The resistor is electrically connected in series between one of a positive electrode and a negative electrode of a secondary battery and a first terminal. The resistor has a function of converting current flowing between the one of the positive electrode and the negative electrode of the secondary battery and the first terminal into a first voltage. The first voltage is added to a voltage of the node ND2 through the capacitor. The comparison circuit has a function of comparing a voltage of the node ND1 and the voltage of the node ND2. The comparison circuit outputs a signal that notifies detection of overcurrent when the voltage of the node ND2 is higher than the voltage of the node ND1.

Abstract: A semiconductor device capable of level shifting in a negative potential direction using an n-channel transistor is provided. The semiconductor device includes a first source follower, a second source follower, and a comparator. The first source follower is supplied with a second high power supply potential and a low power supply potential; the second source follower is supplied with a first high power supply potential and the low power supply potential; and a digital signal which expresses a high level or a low level using the second high power supply potential or the first high power supply potential is input to the first source follower. Here, the second high power supply potential is a potential higher than the first high power supply potential, and the first high power supply potential is a potential higher than the low power supply potential.

Abstract: A method for manufacturing a display device, which does not easily damage an electrode, is provided. In the first step, a terminal electrode, a wiring, and a functional layer are provided over a first substrate; the terminal electrode, the wiring, and the functional layer are electrically connected to one another; an insulating layer is provided over the terminal electrode; a first layer is provided over the terminal electrode and the insulating layer; an adhesive layer is sandwiched between the first substrate and a second substrate; the second substrate and the adhesive layer include a first opening overlapping with part of the first layer; and the insulating layer includes a second opening inside the first opening in a top view. In the second step, part of the first layer is removed by emitting particles having a high sublimation property to the first layer, so that the terminal electrode is exposed.

Abstract: A device in which warpage or distortion is less likely to occur even in a high-temperature or high-humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, and an element layer. The first flexible substrate includes an organic resin. The second flexible substrate includes an organic resin. The element layer is positioned between the first flexible substrate and the second flexible substrate. The element layer includes a light-emitting element. The light-emitting element emits light to the first flexible substrate side. The first flexible substrate has higher average transmittance of light having a wavelength of greater than or equal to 400 nm and less than or equal to 800 nm than the second flexible substrate.

Abstract: A method for manufacturing a display device, which does not easily damage an electrode, is provided. In the first step, a terminal electrode, a wiring, and a functional layer are provided over a first substrate; the terminal electrode, the wiring, and the functional layer are electrically connected to one another; an insulating layer is provided over the terminal electrode; a first layer is provided over the terminal electrode and the insulating layer; an adhesive layer is sandwiched between the first substrate and a second substrate; the second substrate and the adhesive layer include a first opening overlapping with part of the first layer; and the insulating layer includes a second opening inside the first opening in a top view. In the second step, part of the first layer is removed by emitting particles having a high sublimation property to the first layer, so that the terminal electrode is exposed.

Abstract: A method for manufacturing a display device, which does not easily damage an electrode, is provided. In the first step, a terminal electrode, a wiring, and a functional layer are provided over a first substrate; the terminal electrode, the wiring, and the functional layer are electrically connected to one another; an insulating layer is provided over the terminal electrode; a first layer is provided over the terminal electrode and the insulating layer; an adhesive layer is sandwiched between the first substrate and a second substrate; the second substrate and the adhesive layer include a first opening overlapping with part of the first layer; and the insulating layer includes a second opening inside the first opening in a top view. In the second step, part of the first layer is removed by emitting particles having a high sublimation property to the first layer, so that the terminal electrode is exposed.

Abstract: To provide a display device with high reliability. To provide a repeatedly bendable flexible display. A first substrate, a second substrate, a display element, a light-blocking layer, a first barrier layer, and an adhesive layer are included. The first substrate and the second substrate face each other. The display element, the light-blocking layer, the first barrier layer, and the adhesive layer are between the first substrate and the second substrate. The display element is between the first substrate and the adhesive layer. The light-blocking layer is between the second substrate and the adhesive layer. The first barrier layer includes a region between the light-blocking layer and the adhesive layer. The first barrier layer includes a material having a higher Young's modulus than the light-blocking layer or the adhesive layer.

Abstract: A method for manufacturing a display device, which does not easily damage an electrode, is provided. In the first step, a terminal electrode, a wiring, and a functional layer are provided over a first substrate; the terminal electrode, the wiring, and the functional layer are electrically connected to one another; an insulating layer is provided over the terminal electrode; a first layer is provided over the terminal electrode and the insulating layer; an adhesive layer is sandwiched between the first substrate and a second substrate; the second substrate and the adhesive layer include a first opening overlapping with part of the first layer; and the insulating layer includes a second opening inside the first opening in a top view. In the second step, part of the first layer is removed by emitting particles having a high sublimation property to the first layer, so that the terminal electrode is exposed.

Abstract: A method for manufacturing a display device, which does not easily damage an electrode, is provided. In the first step, a terminal electrode, a wiring, and a functional layer are provided over a first substrate; the terminal electrode, the wiring, and the functional layer are electrically connected to one another; an insulating layer is provided over the terminal electrode; a first layer is provided over the terminal electrode and the insulating layer; an adhesive layer is sandwiched between the first substrate and a second substrate; the second substrate and the adhesive layer include a first opening overlapping with part of the first layer; and the insulating layer includes a second opening inside the first opening in a top view. In the second step, part of the first layer is removed by emitting particles having a high sublimation property to the first layer, so that the terminal electrode is exposed.

Abstract: Provided is a device in which heat conduction from a sealant to a functional element is suppressed and whose bezel is slim. The sealing structure includes a first substrate, a second substrate whose surface over which a sealed component is provided faces the first substrate, and a frame-like sealant which seals a space between the first substrate and the second substrate with the first substrate and the second substrate. The second substrate includes a groove portion between the sealant and the sealed component. The groove portion is in a vacuum or includes a substance whose heat conductivity is lower than that of the second substrate.