Abstract: The present disclosure relates to a positive electrode active material for a lithium-sulfur battery, and the positive electrode active material of the present disclosure includes a sulfur-carbon composite, wherein the sulfur-carbon composite includes a porous carbon material and a sulfur-based material disposed on at least a portion of an inside of pores and a surface of the porous carbon material, wherein the sulfur-based material includes at least one of sulfur (S8) or a sulfur compound, and wherein the porous carbon material satisfies one or more of the following conditions: (1) a sum of particle size D10 and particle size D90 is 60 ?m or less; and (2) a broadness factor (BF) satisfying Equation 1 is 7 or less: Broadness factor (BF)=(particle size D90 of the porous carbon material)/(particle size D10 of the porous carbon material)??[Equation 1].

Abstract: The present disclosure relates to a method for preparing a porous carbon material including: (1) a step of centrifugally milling a porous carbon material; and (2) a step of filtering the centrifugally milled porous carbon material through a sieve, wherein a mesh size of the sieve is 2.8 to 4 times of a D50 particle size of the porous carbon material filtered through the sieve in the step (2). The present disclosure also relates to a porous carbon material prepared by the above-described method, a sulfur-carbon composite and a lithium-sulfur battery including the porous carbon material prepared by the above-described method.

Abstract: A positive electrode according to the present disclosure includes a current collector; and a positive electrode active material layer on at least one surface of the current collector, wherein the positive electrode active material layer comprises a sulfur-carbon composite and a binder polymer, wherein the sulfur-carbon composite comprises a porous carbon material and a sulfur-based material disposed on at least a portion of an inside of pores and a surface of the porous carbon material, and wherein a ratio of a thickness of the positive electrode (?m) to an amount of carbon per a unit area (1 cm×1 cm) in the positive electrode active material layer (mg) is 80 to 130 (?m/mg).

Abstract: An array substrate of a liquid crystal display device and a method of fabricating the array substrate. A gate electrode of a thin film transistor of the array substrate is formed. The gate electrode has an edge region surrounding an interior region of the gate electrode and the edge region of the gate electrode is thicker than the interior region of the gate electrode. A semiconductor layer is formed over the gate electrode. A source electrode and a drain electrode of the thin film transistor are formed that define a channel region in the semiconductor layer. The channel region is located over the interior region of the gate electrode. Additionally, the gate electrode may be formed with a half-tone mask that results in the edge region of the gate electrode being thicker than the interior region of the gate electrode.

Abstract: An array substrate of a liquid crystal display device and a method of fabricating the array substrate. A gate electrode of a thin film transistor of the array substrate is formed. The gate electrode has an edge region surrounding an interior region of the gate electrode and the edge region of the gate electrode is thicker than the interior region of the gate electrode. A semiconductor layer is formed over the gate electrode. A source electrode and a drain electrode of the thin film transistor are formed that define a channel region in the semiconductor layer. The channel region is located over the interior region of the gate electrode. Additionally, the gate electrode may be formed with a half-tone mask that results in the edge region of the gate electrode being thicker than the interior region of the gate electrode.

Abstract: An array substrate of a liquid crystal display device and a method of fabricating the array substrate. A gate electrode of a thin film transistor of the array substrate is formed. The gate electrode has an edge region surrounding an interior region of the gate electrode and the edge region of the gate electrode is thicker than the interior region of the gate electrode. A semiconductor layer is formed over the gate electrode. A source electrode and a drain electrode of the thin film transistor are formed that define a channel region in the semiconductor layer. The channel region is located over the interior region of the gate electrode. Additionally, the gate electrode may be formed with a half-tone mask that results in the edge region of the gate electrode being thicker than the interior region of the gate electrode.

Abstract: An array substrate of a liquid crystal display device and a method of fabricating the array substrate. A gate electrode of a thin film transistor of the array substrate is formed. The gate electrode has an edge region surrounding an interior region of the gate electrode and the edge region of the gate electrode is thicker than the interior region of the gate electrode. A semiconductor layer is formed over the gate electrode. A source electrode and a drain electrode of the thin film transistor are formed that define a channel region in the semiconductor layer. The channel region is located over the interior region of the gate electrode. Additionally, the gate electrode may be formed with a half-tone mask that results in the edge region of the gate electrode being thicker than the interior region of the gate electrode.