Abstract: An embodiment of the present inventive step provides a semiconductor device, comprising: first and second fin-type active patterns disposed on an upper surface of a substrate, and having different widths; first and second gate structures crossing the first and second fin-type active patterns, respectively; first and second source/drain regions disposed on the first and second fin-type active patterns, respectively; first and second contact structures connected to the first and second source/drain regions, respectively; a gate isolation structure adjacent to the first fin-type active pattern having a relatively large width; a buried conductive structure contacting one end surface of the gate isolation structure, and connected to the second contact structure; a conductive through-structure extending from a lower surface of the substrate, and connected to the buried conductive structure; and a first wiring layer electrically connected to the first contact structure and the buried conductive structure.

Abstract: Provided is an integrated circuit device including a substrate, a plurality of semiconductor patterns on a first surface of the substrate, a gate electrode extending in a first direction and surrounding the semiconductor patterns, a source/drain region disposed on one side of the gate electrode, a vertical power wiring layer extending in a second direction, a liner structure including a first liner and a second liner, the first liner disposed on a lower portion of a sidewall of the vertical power wiring layer and including a first insulating material, and the second liner disposed on an upper portion of the sidewall of the vertical power wiring layer and including a second insulating material, a first contact disposed on the source/drain region and the vertical power wiring layer, and a back wiring structure disposed on a second surface of the substrate and electrically connected to the vertical power wiring layer.

Abstract: A semiconductor device includes a substrate having a first and second active patterns therein, first and second source/drain patterns extending on the first and second active patterns, respectively, and an active contact on the first and second source/drain patterns. An upper contact is provided, which extends from the active contact towards the substrate, and between the first and second active patterns. A lower power interconnection line is provided, which is buried in a lower portion of the substrate and includes: a buried interconnection portion having a line shape, and a lower contact portion extending vertically from the buried interconnection portion to a bottom surface of the upper contact. A barrier pattern is provided, which extends between the lower contact portion and the upper contact, but not between the buried interconnection portion and the lower contact portion.

Abstract: An apparatus and a method for sampling a signal in a wireless communication system that employs a time division duplex (TDD) scheme are provided. According to various embodiments of the present disclosure, a method for a base station being operated in a wireless communication system that employs TDD comprises the steps of: determining a switching section for controlling a conversion mode of a sampling rate conversion circuit based on a timing advance (TA) value with respect to a signal transmitted by a terminal; generating a switching signal within the switching section; changing the conversion mode from a first mode to second mode in response to the switching signal; and changing a sampling rate of a transmission signal or reception signal based on the second mode.

Abstract: The present inventive concept is related to a display device in which a compensated voltage is applied to a gate line by compensating for a voltage drop of a voltage applied to the gate line.

Abstract: An apparatus and a method for sampling a signal in a wireless communication system that employs a time division duplex (TDD) scheme are provided. According to various embodiments of the present disclosure, a method for a base station being operated in a wireless communication system that employs TDD comprises the steps of: determining a switching section for controlling a conversion mode of a sampling rate conversion circuit based on a timing advance (TA) value with respect to a signal transmitted by a terminal; generating a switching signal within the switching section; changing the conversion mode from a first mode to second mode in response to the switching signal; and changing a sampling rate of a transmission signal or reception signal based on the second mode.

Abstract: The present inventive concept is related to a display device in which a compensated voltage is applied to a gate line by compensating for a voltage drop of a voltage applied to the gate line.