Patents by Inventor Min-Chang Ko

Min-Chang Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrostatic discharge protection device and electronic device having the same
    Patent number: 10211196
    Abstract: An electrostatic discharge (ESD) protection device includes an N-type laterally diffused metal oxide semiconductor (LDMOS) transistor including a source electrode, a gate electrode, and a well bias electrode that are connected to a first pad receiving a first voltage, and a drain electrode connected to a middle node. The ESD protection device further includes a silicon controlled rectifier (SCR) connected between the middle node and a second pad receiving a second voltage higher than the first voltage.
    Type: Grant
    Filed: August 11, 2016
    Date of Patent: February 19, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Hyok Ko, Min-Chang Ko, Han-Gu Kim, Jong-Kyu Song, Jin Heo
  • ELECTROSTATIC DISCHARGE PROTECTION DEVICE AND ELECTRONIC DEVICE HAVING THE SAME
    Publication number: 20170062406
    Abstract: An electrostatic discharge (ESD) protection device includes an N-type laterally diffused metal oxide semiconductor (LDMOS) transistor including a source electrode, a gate electrode, and a well bias electrode that are connected to a first pad receiving a first voltage, and a drain electrode connected to a middle node. The ESD protection device further includes a silicon controlled rectifier (SCR) connected between the middle node and a second pad receiving a second voltage higher than the first voltage.
    Type: Application
    Filed: August 11, 2016
    Publication date: March 2, 2017
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Hyok KO, Min-Chang KO, Han-Gu KIM, Jong-Kyu SONG, Jin HEO
  • Diode, ESD protection circuit and method of manufacturing the same
    Patent number: 9093287
    Abstract: A method of manufacturing a diode is provided. An N-type well region is formed in a first upper portion of an N-type epitaxial layer. A P-type drift region is formed in a second upper portion of the N-type epitaxial layer. An N-type doping region is formed in the N-type well region. A P-type doping region is formed in the P-type drift region. An isolation structure is formed in the P-type drift region. The isolation structure is disposed between the P-type doping region and the N-type well region. A first electrode is formed on a portion of the N-type epitaxial layer. The portion of the N-type epitaxial layer is disposed between the N-type well region and the P-type drift region. The first electrode overlaps a portion of the isolation structure. A connection structure is formed to electrically couple the N-type doping region and the first electrode.
    Type: Grant
    Filed: November 18, 2013
    Date of Patent: July 28, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-Hyok Ko, Han-Gu Kim, Min-Chang Ko, Chang-Su Kim, Kyoung-Ki Jeon
  • DIODE, ESD PROTECTION CIRCUIT AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140210003
    Abstract: A method of manufacturing a diode is provided. An N-type well region is formed in a first upper portion of an N-type epitaxial layer. A P-type drift region is formed in a second upper portion of the N-type epitaxial layer. An N-type doping region is formed in the N-type well region. A P-type doping region is formed in the P-type drift region. An isolation structure is formed in the P-type drift region. The isolation structure is disposed between the P-type doping region and the N-type well region. A first electrode is formed on a portion of the N-type epitaxial layer. The portion of the N-type epitaxial layer is disposed between the N-type well region and the P-type drift region. The first electrode overlaps a portion of the isolation structure. A connection structure is formed to electrically couple the N-type doping region and the first electrode.
    Type: Application
    Filed: November 18, 2013
    Publication date: July 31, 2014
    Inventors: Jae-Hyok KO, Han-Gu KIM, Min-Chang KO, Chang-Su KIM, Kyoung-Ki JEON
  • Electrostatic discharge protection element and electrostatic discharge protection circuit including the same
    Patent number: 8174806
    Abstract: An electrostatic discharge (ESD) protection element includes a first diode, a second diode, and a poly resistor. The first diode is connected between a first voltage and an input/output (I/O) pad. The second diode is connected between the I/O pad and a second voltage. The poly resistor is formed on the second diode.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: May 8, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Suk-Jin Kim, Han-Gu Kim, Jae-Hyok Ko, Hyo-Cheol Ban, Min-Chang Ko, Kyoung-Ki Jeon
  • Electrostatic discharge protection element and electrostatic discharge protection circuit including the same
    Publication number: 20100214705
    Abstract: An electrostatic discharge (ESD) protection element includes a first diode, a second diode, and a poly resistor. The first diode is connected between a first voltage and an input/output (I/O) pad. The second diode is connected between the I/O pad and a second voltage. The poly resistor is formed on the second diode.
    Type: Application
    Filed: February 12, 2010
    Publication date: August 26, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Suk-Jin Kim, Han-Gu Kim, Jae-Hyok Ko, Hyo-Cheol Ban, Min-Chang Ko, Kyoung-Ki Jeon