Patents by Inventor Mineo Goto

Mineo Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming photomask and method of manufacturing semiconductor device
    Patent number: 6333213
    Abstract: Resist film patterns are formed on a light shielding film formed on a surface of the glass substrate. The resist film patterns cover regions A and B of the surface of the substrate. Then, using the resist film patterns as a mask, the light shielding film is patterned to form the light shielding film pattern in the regions A and B. The light shielding film pattern formed in region B is used as a dummy pattern. Then, a further resist film is formed over the light shielding film patterns of the regions A and B. The resist film is patterned to provide only a resist film pattern covering the region A. Thereafter, an etching processing is applied for removing the light shielding film pattern in the region B using the resist film pattern as a mask. In this method, the presence of the dummy pattern is an important feature.
    Type: Grant
    Filed: December 27, 2000
    Date of Patent: December 25, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shigeru Hasebe, Mineo Goto, Osamu Ikenaga
  • Method of forming photomask and method of manufacturing semiconductor device
    Publication number: 20010005619
    Abstract: Resist film patterns are formed on a light shielding film formed on a surface of the glass substrate. The resist film patterns cover regions A and B of the surface of the substrate. Then, using the resist film patterns as a mask, the light shielding film is patterned to form the light shielding film pattern in the regions A and B. The light shielding film pattern formed in region B is used as a dummy pattern. Then, a further resist film is formed over the light shielding film patterns of the regions A and B. The resist film is patterned to provide only a resist film pattern covering the region A. Thereafter, an etching processing is applied for removing the light shielding film pattern in the region B using the resist film pattern as a mask. In this method, the presence of the dummy pattern is an important feature.
    Type: Application
    Filed: December 27, 2000
    Publication date: June 28, 2001
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shigeru Hasebe, Mineo Goto, Osamu Ikenaga