Patents by Inventor Mineo Hayashi

Mineo Hayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5180422
    Abstract: A copper smelting process is disclosed in which copper concentrate is smelted in a furnace to produce purified copper. Flue gas discharged from the furnace is treated to produce sulfuric acid. Furthermore, waste liquid discharged during the production of sulfuric acid is treated to produce gypsum, and the gypsum thus produced is recycled to the furnace as a flux. The flue gas may be exhausted from either or both of a smelting furnace and a converting furnace, and the gypsum may be preferably introduced into the converting furnace.
    Type: Grant
    Filed: November 20, 1991
    Date of Patent: January 19, 1993
    Assignee: Mitsubishi Materials Corporation
    Inventors: Nobuo Kikumoto, Mineo Hayashi
  • Patent number: 5160588
    Abstract: An improved process for recovering tellurium from copper electrolysis slime. The process comprises leaching copper and tellurium from said slime with sulfuric acid and recovering tellurium from the solution after leaching (called "leach") by suspending at least one copper electrode plate in a bath of a leach, allowing tellurium to deposit on the surface thereof as copper telluride, agitating the bath as required so as to remove the copper telluride formed on the surface of the copper plates and allow it to settle, collecting the copper telluride precipitate and obtaining tellurium by means known per se. A high grade copper tellurium precipitate is obtained.
    Type: Grant
    Filed: December 1, 1989
    Date of Patent: November 3, 1992
    Assignees: Mitsubishi Materials Corporation, Onahama Smelting and Refining Company, Ltd.
    Inventors: Yukio Sugawara, Mineo Hayashi, Junji Konishi, Shosaku Hayashi
  • Patent number: 4467449
    Abstract: An improved integrated circuit in which capacitive loads can be driven at a high speed is disclosed. The circuit comprises a first and a second capacitive loads disposed separately from each other, a first switch located near the first capacitive load and adapted to drive it with a power source, a second switch located near the second capacitive load and adapted to drive it with the power source, and means for simultaneously controlling the first and second switch.
    Type: Grant
    Filed: September 1, 1981
    Date of Patent: August 21, 1984
    Assignee: Nippon Electric Co., Ltd.
    Inventor: Mineo Hayashi
  • Patent number: 4456977
    Abstract: A semiconductor memory device having a large memory capacity and an improved read-out function is disclosed. The device comprises a plurality of word lines extended in the row direction, a plurality of pairs of data lines extended in the column direction and arranged in parallel, a plurality of memory cells arranged at the cross-points between the word lines and the data lines, and a plurality of sense amplifiers each coupled to each pair of the data lines, and is featured in that n (an integer of two or more) sense amplifiers are arrayed respectively in the column direction and are arranged for every n pairs of data lines in the row direction.
    Type: Grant
    Filed: March 13, 1981
    Date of Patent: June 26, 1984
    Assignee: Nippon Electric Co., Ltd.
    Inventor: Mineo Hayashi