Patents by Inventor Ming-Chang Ching

Ming-Chang Ching has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor having a back-barrier layer and method of making the same
    Patent number: 9455341
    Abstract: A transistor includes a substrate and a buffer layer on the substrate, wherein the buffer layer comprises p-type dopants. The transistor further includes a channel layer on the buffer layer and a back-barrier layer between a first portion of the channel layer and a second portion of the channel layer. The back-barrier layer has a band gap discontinuity with the channel layer. The transistor further includes an active layer on the second portion of the channel layer, wherein the active layer has a band gap discontinuity with the second portion of the channel layer. The transistor further includes a two dimensional electron gas (2-DEG) in the channel layer adjacent an interface between the channel layer and the active layer.
    Type: Grant
    Filed: July 17, 2013
    Date of Patent: September 27, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi-Ming Chen, Chih-Wen Hsiung, Po-Chun Liu, Ming-Chang Ching, Chung-Yi Yu, Xiaomeng Chen
  • TRANSISTOR HAVING A BACK-BARRIER LAYER AND METHOD OF MAKING THE SAME
    Publication number: 20150021660
    Abstract: A transistor includes a substrate and a buffer layer on the substrate, wherein the buffer layer comprises p-type dopants. The transistor further includes a channel layer on the buffer layer and a back-barrier layer between a first portion of the channel layer and a second portion of the channel layer. The back-barrier layer has a band gap discontinuity with the channel layer. The transistor further includes an active layer on the second portion of the channel layer, wherein the active layer has a band gap discontinuity with the second portion of the channel layer. The transistor further includes a two dimensional electron gas (2-DEG) in the channel layer adjacent an interface between the channel layer and the active layer.
    Type: Application
    Filed: July 17, 2013
    Publication date: January 22, 2015
    Inventors: Chi-Ming CHEN, Chih-Wen HSIUNG, Po-Chun LIU, Ming-Chang CHING, Chung-Yi YU, Xiaomeng CHEN
  • TRANSISTOR HAVING BACK-BARRIER LAYER AND METHOD OF MAKING THE SAME
    Publication number: 20150021665
    Abstract: A transistor includes a substrate, a channel layer over the substrate, a back-barrier layer over the channel layer, and an active layer over the back-barrier layer. The back-barrier layer has a band gap discontinuity with the channel layer. The band gap of the active layer is less than the band gap of the back-barrier layer. A two dimensional electron gas (2-DEG) is formed in the channel layer adjacent an interface between the channel layer and the back-barrier layer.
    Type: Application
    Filed: July 17, 2013
    Publication date: January 22, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi-Ming CHEN, Po-Chun LIU, Chen-Hao CHIANG, Ming-Chang CHING, Ming-Chyi LIU, Chung-Yi YU
  • Transistor having doped substrate and method of making the same
    Patent number: 8901609
    Abstract: A transistor includes a substrate, wherein a top portion of the substrate is doped with p-type dopants to a dopant concentration ranging from about 1×1018 ions/cm3 to about 1×1023 ions/cm3. The transistor further includes a graded layer on the substrate and a channel layer on the graded layer. The transistor further includes an active layer on the channel layer, wherein the active layer has a band gap discontinuity with the channel layer.
    Type: Grant
    Filed: July 17, 2013
    Date of Patent: December 2, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Ming Chen, Chih-Wen Hsiung, Ming-Chang Ching, Chen-Hao Chiang, Po-Chun Liu, Chung-Yi Yu, Chia-Shiung Tsai, Xiaomeng Chen