Abstract: A resistive memory apparatus including a memory cell array, at least one dummy transistor and a control circuit is provided. The memory cell array includes a plurality of memory cells. Each of the memory cells includes a resistive switching element. The dummy transistor is electrically isolated from the resistive switching element. The control circuit is coupled to the memory cell array and the dummy transistor. The control circuit is configured to provide a first bit line voltage, a source line voltage and a word line voltage to the dummy transistor to drive the dummy transistor to output a saturation current. The control circuit is further configured to determine a value of a second bit line voltage for driving the memory cells according to the saturation current. In addition, an operating method and a memory cell array of the resistive memory apparatus are also provided.

Abstract: A semiconductor device structure is provided. The semiconductor device has a first dielectric wall between an n-type source/drain region and a p-type source/drain region to physically and electrically isolate the n-type source/drain region and the p-type source/drain region from each other. A second dielectric wall is formed between a first channel region connected to the n-type source/drain region and a second channel region connected to the p-type source/drain region. A contact is formed to physically and electrically connect the n-type source/drain region with the p-type source/drain region, wherein the contact extends over the first dielectric wall. The first electric wall has a gradually decreasing width W5 towards a tip of the dielectric wall from a top contact position between the first dielectric wall and either the n-type source/drain region or the p-type source/drain region.

Abstract: An image conversion device includes: a lens module configured to allow passing of image light beams of an object, an optical waveguide element configured to transmit the image light beams to a light processing component, and an image sensor configured to convert the image light beams into digital image signals. By changing image capturing and image forming methods, higher image quality may be achieved and expanding flexibility may be maintained.

Abstract: A device for a plasma processing chamber includes a base, an upper portion attached to the base and extending transverse to the base, and one or more first through holes defined in the base. The one or more first through holes correspond to one or more openings defined in the plasma processing chamber for attaching the device. The device further includes a second through hole defined in the upper portion, and a gauge located in the second through hole, the gauge configured for recording a position of the plasma processing chamber and a shift in the position of the plasma processing chamber.

Abstract: A method and apparatus are disclosed. In an example from the perspective of a first device, a grant is received from a network node. The grant allocates a set of sidelink data resources. One or more sidelink data transmissions are performed on the set of sidelink data resources. A second feedback information associated with the one or more sidelink data transmissions is received and/or detected. An uplink resource is derived. A first feedback information is transmitted on the uplink resource to the network node. The first feedback information is set based upon the second feedback information.

Abstract: The disclosure provides a power management method. The power management method is applicable to an electronic device. The electronic device is electrically coupled to an adapter, and includes a system and a battery. The adapter has a feed power. The battery has a discharge power. The power management method of the disclosure includes: reading a power value of the battery; determining a state of the system; and discharging power to the system, when the system is in a power-on state and the power value is greater than a charging stopping value, by using the battery, and controlling, according to the discharge power and the feed power, the adapter to selectively supply power to the system. The disclosure further provides an electronic device using the power management method.

Abstract: Disclosed is an electronic device having a display region and a peripheral region adjacent to the display region. The electronic device includes a first electrode disposed in the display region, a second electrode disposed in the display region, a circuit module disposed in the peripheral region, a first electrical trace, and a second electrical trace electrically insulated from the first electrical trace. The circuit module is electrically connected to the first electrode through the first electrical trace and provides a first driving voltage to the first electrical trace. The circuit module is electrically connected to the second electrode through the second electrical trace and provides a second driving voltage to the second electrical trace, and the first driving voltage is different from the second driving voltage. In a top view, the first electrical trace at least partially overlaps the second electrical trace.

Abstract: A method includes forming a semiconductor fin over a substrate; forming isolation structures laterally surrounding the semiconductor fin; forming a gate structure over the semiconductor fin; forming a first spacer layer and a second spacer layer over the gate structure and the semiconductor fin; etching back the second spacer layer, such that a top surface of the second spacer layer is lower than a top surface of the first spacer layer; after etching back the second spacer layer, forming a third spacer layer over the first spacer layer and the second spacer layer; etching the first, second, and third spacer layers and the semiconductor fin to form recesses; and forming epitaxial source/drain structures in the recesses.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming first and second semiconductor fins; forming first and second gate structures respectively over first regions of the first and second semiconductor fins; forming a first dummy spacer at a sidewall of the first gate structure adjacent a second region of the first semiconductor fin; etching a first source/drain recess in the second region of the first semiconductor fin; forming a n-type source/drain epitaxial structure in the first source/drain recess; forming a second dummy spacer at a sidewall of the second gate structure adjacent a second region of the second semiconductor fin, wherein the second dummy spacer has a thickness less than that of the first dummy spacer; etching a second source/drain recess in the second region of the second semiconductor fin; and forming a p-type source/drain epitaxial structure in the second source/drain recess.

Abstract: A device for a plasma processing chamber includes a base, an upper portion attached to the base and extending transverse to the base, and one or more first through holes defined in the base. The one or more first through holes correspond to one or more openings defined in the plasma processing chamber for attaching the device. The device further includes a second through hole defined in the upper portion, and a gauge located in the second through hole, the gauge configured for recording a position of the plasma processing chamber and a shift in the position of the plasma processing chamber.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a gate stack over a substrate. The method includes forming a spacer structure over a sidewall of the gate stack. The method includes forming a source/drain structure in and over the substrate, wherein a portion of the spacer structure is between the source/drain structure and the gate stack. The method includes partially removing the outer layer, wherein a first lower portion of the outer layer remains between the source/drain structure and the gate stack. The method includes partially removing the middle layer, wherein a second lower portion of the middle layer remains between the source/drain structure and the gate stack.

Abstract: A door handle set includes a handle assembly having a primary lock and having a handle rotatable about a primary rotational axis. A latch bolt assembly has a latch bolt. The latch bolt assembly is operatively coupled to the handle assembly, wherein a rotation of the handle results in a linear translation of the latch bolt. A supplemental lock has a second axis parallel to, and spaced apart from, the primary rotational axis. The supplemental lock has an actuator that is operable relative to the second axis. The supplemental lock is configured to selectively block the rotation of the handle regardless of the locking state of the primary lock.

Abstract: A method of processing a semiconductor wafer is provided. The method includes installing upper lid. The installation of the upper lid includes placing an inlet manifold on a water box; inserting a jig into a lower gas channel in the water box and inserting into an upper gas channel in the inlet manifold; fastening the water box to the inlet manifold; and removing the jig after the water box engaging with the inlet manifold. The method also includes connecting a shower head on a lower side of the water box; and connecting the upper lid to a housing. The method further includes placing a semiconductor wafer into the housing. In addition, the method includes supplying a process gas over the semiconductor wafer through the upper gas channel, the lower gas channel and the shower head.

Abstract: A device for a plasma processing chamber includes a base, an upper portion attached to the base and extending transverse to the base, and one or more first through holes defined in the base. The one or more first through holes correspond to one or more openings defined in the plasma processing chamber for attaching the device. The device further includes a second through hole defined in the upper portion, and a gauge located in the second through hole, the gauge configured for recording a position of the plasma processing chamber and a shift in the position of the plasma processing chamber.

Abstract: An interconnection assembly includes a chassis, and cam plates that are rotatably coupled to the chassis to pivot about a plurality of rotational axises. An upper cam plate is operatively coupled to a deadbolt. The upper cam plate has a cam surface. A lower cam plate is rotatably coupled to the chassis to pivot about a second rotational axis. The lower cam plate is operatively coupled to an interior latch bolt handle. The lower cam plate has a cam slot. A linkage bar is rotatably coupled to the chassis to pivot about a pivot axis. The linkage bar has a first linkage portion having a first cam follower configured to operatively engage the cam surface of the upper cam plate and has a second linkage portion having a second cam follower operatively received in the cam slot of the lower cam plate.

Abstract: A method of processing a semiconductor wafer is provided. The method includes installing upper lid. The installation of the upper lid includes placing an inlet manifold on a water box; inserting a jig into a lower gas channel in the water box and inserting into an upper gas channel in the inlet manifold; fastening the water box to the inlet manifold; and removing the jig after the water box engaging with the inlet manifold. The method also includes connecting a shower head on a lower side of the water box; and connecting the upper lid to a housing. The method further includes placing a semiconductor wafer into the housing. In addition, the method includes supplying a process gas over the semiconductor wafer through the upper gas channel, the lower gas channel and the shower head.

Abstract: A wireless network management method for a wireless network is provided. A length parameter of a slotframe is evaluated by considering an advertisement requirement and/or a data transmission requirement of the wireless network. The length parameter of the slotframe is adjusted to be relatively prime to a total number of available channels. At least one timeslot within the slotframe is assigned for matching the advertisement and/or the data transmission requirements, and the timeslot assignment of the slotframe is advertised.

Abstract: A wireless network management method for a wireless network is provided. A length parameter of a slotframe is evaluated by considering an advertisement requirement and/or a data transmission requirement of the wireless network. The length parameter of the slotframe is adjusted to be relatively prime to a total number of available channels. At least one timeslot within the slotframe is assigned for matching the advertisement and/or the data transmission requirements, and the timeslot assignment of the slotframe is advertised.

Abstract: A wireless network management method for a wireless network is provided. The wireless network management method includes: calculating a data transmission requirement of the wireless network; based on the calculated data transmission requirement, assigning at least an advertising timeslot in a slotframe; based on the calculated data transmission requirement, determining whether to assign and how to assign at least a data timeslot in the slotframe; and advertising a timeslot assignment of the slotframe.