Patents by Inventor Ming-Chen Chen
Ming-Chen Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240142669Abstract: An electronic device including a protective substrate is provided. The protective substrate includes a substrate and an anti-reflection layer. The anti-reflection layer is disposed on the substrate. The anti-reflection layer includes a first sublayer to an nth sublayer sequentially arranged on the substrate, where n is greater than 1, and a product range of a thickness and a refractive index of the nth sublayer ranges from 100 nm to 170 nm.Type: ApplicationFiled: September 21, 2023Publication date: May 2, 2024Applicants: Innolux Corporation, CARUX TECHNOLOGY PTE. LTD.Inventors: Kuan-Chen Chen, Liang-Cheng Ma, Ming-Er Fan
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Publication number: 20240137709Abstract: An electro-acoustical transducer device is disclosed, which includes: a hollow disk body that generally defines an axis of propagation, the hollow disk body comprising: a pair of plate members extending substantially perpendicular to the axis of propagation, each provided with a central transmitting port arranged about the axis of propagation, and a peripheral enclosure jointing the pair of plate members at the respective outer edge portions thereof, thereby defining a chamber of resonance between the pair of plate members; wherein a ring-opening about the axis of propagation that enables access to the chamber of resonance is formed between the central transmitting ports of the plate members.Type: ApplicationFiled: April 27, 2023Publication date: April 25, 2024Inventors: YU-CHEN CHEN, CHUN-KAI CHAN, HSU-HSIANG CHENG, MING-CHING CHENG
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Publication number: 20240093416Abstract: A sewing machine includes a main body and a quick release needle plate module. The main body includes a base seat having an inner frame, and an outer case that is mounted to the inner frame and that defines an accommodating compartment. The quick release needle plate module includes a catch member, and a needle plate that covers the accommodating compartment, that is detachably pivoted to a rear section of the inner frame, and that engages the catch member. The quick release needle plate module further includes a press member inserted through the outer case and the inner frame, and operable to push the catch member to disengage the catch member. The needle plate has a plate body that covers the accommodating compartment, and a resilient member mounted between the inner frame and the plate body for driving pivot action of the plate body away from the inner frame.Type: ApplicationFiled: January 20, 2023Publication date: March 21, 2024Applicant: ZENG HSING INDUSTRIAL CO., LTD.Inventors: Kun-Lung HSU, Ming-Ta LEE, Wei-Chen CHEN, Po-Hsien TSENG
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Patent number: 8106461Abstract: An apparatus comprises a circuit for measuring a gate leakage current of a plurality of transistors. A circuit is provided to apply heat to gates of the plurality of transistors. A circuit is provided to apply a single stress bias voltage to the plurality of transistors for a stress period t. The stress bias voltage is sufficient to cause a 10% degradation in a drive current of the transistor within the stress period t. A processor is provided for estimating a negative bias temperature instability (NBTI) lifetime ? of the transistor based on a relationship between the gate leakage current and one or more of the group consisting of gate voltage, gate length, gate temperature, and gate width of the plurality of transistors. The relationship is determined from data observed while applying the single stress bias voltage.Type: GrantFiled: September 22, 2010Date of Patent: January 31, 2012Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Lin Chen, Yi-Miaw Lin, Ming-Chen Chen
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Publication number: 20110010117Abstract: An apparatus comprises a circuit for measuring a gate leakage current of a plurality of transistors. A circuit is provided to apply heat to gates of the plurality of transistors. A circuit is provided to apply a single stress bias voltage to the plurality of transistors for a stress period t. The stress bias voltage is sufficient to cause a 10% degradation in a drive current of the transistor within the stress period t. A processor is provided for estimating a negative bias temperature instability (NBTI) lifetime ? of the transistor based on a relationship between the gate leakage current and one or more of the group consisting of gate voltage, gate length, gate temperature, and gate width of the plurality of transistors. The relationship is determined from data observed while applying the single stress bias voltage.Type: ApplicationFiled: September 22, 2010Publication date: January 13, 2011Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Lin CHEN, Y. M. LIN, Ming-Chen CHEN
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Patent number: 7820457Abstract: A method includes measuring a gate leakage current of a plurality of transistors. A single stress bias voltage is applied to the plurality of transistors. The stress bias voltage causes a 10% degradation in a drive current of each transistor within a respective stress period t. One or more relationships are determined, between the measured gate leakage current and one or more of the group consisting of gate voltage, gate length, gate temperature, and gate width of the plurality of transistors, respectively. A negative bias temperature instability (NBTI) lifetime ? of the plurality of transistors is estimated, based on the measured gate leakage current and the one or more relationships.Type: GrantFiled: November 3, 2006Date of Patent: October 26, 2010Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Lin Chen, Yi-Miaw Lin, Ming-Chen Chen
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Publication number: 20070238200Abstract: A method includes measuring a gate leakage current of a plurality of transistors. A single stress bias voltage is applied to the plurality of transistors. The stress bias voltage causes a 10% degradation in a drive current of each transistor within a respective stress period t. One or more relationships are determined, between the measured gate leakage current and one or more of the group consisting of gate voltage, gate length, gate temperature, and gate width of the plurality of transistors, respectively. A negative bias temperature instability (NBTI) lifetime ? of the plurality of transistors is estimated, based on the measured gate leakage current and the one or more relationships.Type: ApplicationFiled: November 3, 2006Publication date: October 11, 2007Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Lin Chen, Y. M. Lin, Ming-Chen Chen
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Patent number: 7268575Abstract: A method includes measuring a gate leakage current of at least one transistor. A single stress bias voltage is applied to the at least one transistor at a given temperature for a stress period t. The stress bias voltage causes a 10% degradation in a drive current of the transistor at the given temperature within the stress period t. A negative bias temperature instability (NBTI) lifetime ? of the transistor is estimated based on the measured gate leakage current and a relationship between drive current degradation and time observed during the applying step.Type: GrantFiled: April 6, 2006Date of Patent: September 11, 2007Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Lin Chen, Ming-Chen Chen
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Patent number: 5555994Abstract: A dome cover for cooking utensils, including a dome-like cover body made from a meshed steel plate by stamping and defining a plurality of small open spaces in it, and a knob raised from the top center of the dome-like cover body, the dome-like cover body having a stepped outward flange around the border, which stepped outward flange has a rim around the border reinforced by a steel wire.Type: GrantFiled: July 25, 1995Date of Patent: September 17, 1996Inventor: Ming-Chen Chen