Patents by Inventor Ming-Cheng Lo
Ming-Cheng Lo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250130368Abstract: A silicon photonic platform includes a composite substrate with a first photonic platform layer which includes a photonic platform material. A first signal layer covers the first photonic platform layer, has a top surface, and includes the photonic platform material and a first signal material. A photonic platform spectral signal is different from the first signal material spectral signal. The second photonic platform layer has a top surface, covers at least a portion of the top surface of the first signal, and includes the photonic platform material. The second photonic platform layer includes at least one ridge structure, and forms a silicon photonic platform together with the first photonic platform layer.Type: ApplicationFiled: October 20, 2023Publication date: April 24, 2025Applicant: Vanguard International Semiconductor CorporationInventors: Ming-Cheng Lo, Shih-Chang Huang, Jui-Chun Chang, Wu-Hsi Lu, Yu-Che Tsai, Shih-Hao Liu, Yen-Shih Ho
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Publication number: 20250076580Abstract: A photonic integrated circuit structure includes a semiconductor substrate. A waveguide is disposed above the semiconductor substrate and has an inclined plane. A mirror coating layer is conformally disposed on the inclined plane. A cladding layer covers the waveguide and the mirror coating layer. A hole is disposed in the semiconductor substrate or the cladding layer, and the hole overlaps the inclined plane in a vertical direction. In addition, an optical fiber is disposed in the hole to receive a reflected light from the mirror coating layer.Type: ApplicationFiled: August 31, 2023Publication date: March 6, 2025Applicant: Vanguard International Semiconductor CorporationInventors: Ming-Cheng Lo, Jui-Chun Chang, Shih-Chang Huang, Wu-Hsi Lu, Yu-Che Tsai, Shih-Hao Liu, Yen-Shih Ho
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Publication number: 20240274635Abstract: An optical sensor device is provided. The optical sensor device includes a semiconductor substrate, an isolation feature, a first doped region, a second doped region, and a third doped region. The semiconductor substrate of a first conductivity type includes a sensing region surrounded by an isolation region. The first doped region of a second conductivity type is located in the sensing region. The second doped region of the second conductivity type is located in the sensing region and above the first doped region. The third doped region of the first conductivity type is located in the sensing region and on the second doped region. In a cross-sectional view, the first doped region has a first length, the second doped region has a second length, and a first ratio, which is the ratio of the second length to the first length, is greater than 0 and less than 1.Type: ApplicationFiled: February 13, 2023Publication date: August 15, 2024Applicant: Vanguard International Semiconductor CorporationInventors: Shih-Hao LIU, Yu-Che TSAI, Jui-Chun CHANG, Wu-Hsi LU, Ming-Cheng LO
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Patent number: 11637139Abstract: A semiconductor device is provided. The semiconductor device includes a substrate and a light-collimating layer. The substrate has a plurality of pixels. The light-collimating layer is disposed on the substrate, and the light-collimating layer includes a transparent material layer, a first light-shielding layer, a second light-shielding layer and a plurality of transparent pillars. The transparent material layer covers the pixels. The first light-shielding layer is disposed on the substrate and the first light-shielding layer has a plurality of holes corresponding to the pixels. The second light-shielding layer is disposed on the first light-shielding layer. The transparent pillars are disposed in the second light-shielding layer.Type: GrantFiled: April 13, 2022Date of Patent: April 25, 2023Assignee: Vanguard International Semiconductor CorporationInventors: Chung-Ren Lao, Chih-Cherng Liao, Shih-Hao Liu, Wu-Hsi Lu, Ming-Cheng Lo, Wei-Lun Chung, Chih-Wei Lin
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Patent number: 11538840Abstract: A semiconductor device includes a conductive substrate and an encapsulation structure. The conductive substrate has a plurality of pixels. The encapsulation structure is disposed on the conductive substrate and includes at least one light-collimating unit. The light-collimating unit includes a transparent substrate and a patterned light-shielding layer. The patterned light-shielding layer is disposed on the transparent substrate. The patterned light-shielding layer has a plurality of holes disposed to correspond to the pixels.Type: GrantFiled: August 15, 2019Date of Patent: December 27, 2022Assignee: Vanguard International Semiconductor CorporationInventors: Wu-Hsi Lu, Chung-Ren Lao, Chih-Cherng Liao, Shih-Hao Liu, Ming-Cheng Lo, Wei-Lun Chung
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Publication number: 20220238584Abstract: A semiconductor device is provided. The semiconductor device includes a substrate and a light-collimating layer. The substrate has a plurality of pixels. The light-collimating layer is disposed on the substrate, and the light-collimating layer includes a transparent material layer, a first light-shielding layer, a second light-shielding layer and a plurality of transparent pillars. The transparent material layer covers the pixels. The first light-shielding layer is disposed on the substrate and the first light-shielding layer has a plurality of holes corresponding to the pixels. The second light-shielding layer is disposed on the first light-shielding layer. The transparent pillars are disposed in the second light-shielding layer.Type: ApplicationFiled: April 13, 2022Publication date: July 28, 2022Applicant: Vanguard International Semiconductor CorporationInventors: Chung-Ren Lao, Chih-Cherng Liao, Shih-Hao Liu, Wu-Hsi Lu, Ming-Cheng Lo, Wei-Lun Chung, Chih-Wei Lin
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Patent number: 11335717Abstract: A semiconductor device is provided. The semiconductor device includes a substrate and a light-collimating layer. The substrate has a plurality of pixels. The light-collimating layer is disposed on the substrate, and the light-collimating layer includes a transparent material layer, a first light-shielding layer, a second light-shielding layer and a plurality of transparent pillars. The transparent material layer covers the pixels. The first light-shielding layer is disposed on the substrate and the first light-shielding layer has a plurality of holes corresponding to the pixels. The second light-shielding layer is disposed on the first light-shielding layer. The transparent pillars are disposed in the second light-shielding layer.Type: GrantFiled: March 22, 2019Date of Patent: May 17, 2022Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATIONInventors: Chung-Ren Lao, Chih-Cherng Liao, Shih-Hao Liu, Wu-Hsi Lu, Ming-Cheng Lo, Wei-Lun Chung, Chih-Wei Lin
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Patent number: 11217708Abstract: An optical sensor includes a substrate, a first/second/third well disposed in a sensing region, a deep trench isolation structure, and a passivation layer. The substrate has a first conductivity type and includes the sensing region. The first well has a second conductivity type and a first depth. The second well has the second conductivity type and a second depth. The third well has the first conductivity type and a third depth. The deep trench isolation structure is disposed in the substrate and surrounding the sensing region, wherein the depth of the deep trench isolation structure is greater than the first depth, the first depth is greater than the second depth, and the second depth is greater than the third depth. The passivation layer is disposed over the substrate, wherein the passivation layer includes a plurality of protruding portions disposed directly above the sensing region.Type: GrantFiled: June 2, 2020Date of Patent: January 4, 2022Assignee: Vanguard International Semiconductor CorporationInventors: Shih-Hao Liu, Chung-Ren Lao, Chih-Cherng Liao, Wu-Hsi Lu, Ming-Cheng Lo, Wei-Lun Chung, Chih-Wei Lin
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Publication number: 20210376171Abstract: An optical sensor includes a substrate, a first/second/third well disposed in a sensing region, a deep trench isolation structure, and a passivation layer. The substrate has a first conductivity type and includes the sensing region. The first well has a second conductivity type and a first depth. The second well has the second conductivity type and a second depth. The third well has the first conductivity type and a third depth. The deep trench isolation structure is disposed in the substrate and surrounding the sensing region, wherein the depth of the deep trench isolation structure is greater than the first depth, the first depth is greater than the second depth, and the second depth is greater than the third depth. The passivation layer is disposed over the substrate, wherein the passivation layer includes a plurality of protruding portions disposed directly above the sensing region.Type: ApplicationFiled: June 2, 2020Publication date: December 2, 2021Applicant: Vanguard International Semiconductor CorporationInventors: Shih-Hao LIU, Chung-Ren LAO, Chih-Cherng LIAO, Wu-Hsi LU, Ming-Cheng LO, Wei-Lun CHUNG, Chih-Wei LIN
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Publication number: 20210050378Abstract: A semiconductor device includes a conductive substrate and an encapsulation structure. The conductive substrate has a plurality of pixels. The encapsulation structure is disposed on the conductive substrate and includes at least one light-collimating unit. The light-collimating unit includes a transparent substrate and a patterned light-shielding layer. The patterned light-shielding layer is disposed on the transparent substrate. The patterned light-shielding layer has a plurality of holes disposed to correspond to the pixels.Type: ApplicationFiled: August 15, 2019Publication date: February 18, 2021Applicant: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATIONInventors: Wu-Hsi Lu, Chung-Ren Lao, Chih-Cherng Liao, Shih-Hao Liu, Ming-Cheng Lo, Wei-Lun Chung
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Publication number: 20200303441Abstract: A semiconductor device is provided. The semiconductor device includes a substrate and a light-collimating layer. The substrate has a plurality of pixels. The light-collimating layer is disposed on the substrate, and the light-collimating layer includes a transparent material layer, a first light-shielding layer, a second light-shielding layer and a plurality of transparent pillars. The transparent material layer covers the pixels. The first light-shielding layer is disposed on the substrate and the first light-shielding layer has a plurality of holes corresponding to the pixels. The second light-shielding layer is disposed on the first light-shielding layer. The transparent pillars are disposed in the second light-shielding layer.Type: ApplicationFiled: March 22, 2019Publication date: September 24, 2020Applicant: Vanguard International Semiconductor CorporationInventors: Chung-Ren LAO, Chih-Cherng LIAO, Shih-Hao LIU, Wu-Hsi LU, Ming-Cheng LO, Wei-Lun CHUNG, Chih-Wei LIN
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Patent number: 10572070Abstract: An optical device is provided. The optical device includes a substrate including a plurality of pixel units, a dielectric layer disposed on the substrate, a patterned light-transmitting layer disposed on the dielectric layer and corresponding to the plurality of pixel units, and a plurality of continuous light-shielding layers disposed on the dielectric layer and located on both sides of the patterned light-transmitting layer. A method for fabricating an optical device is also provided.Type: GrantFiled: June 25, 2018Date of Patent: February 25, 2020Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATIONInventors: Chih-Cherng Liao, Shih-Hao Liu, Wu-Hsi Lu, Ming-Cheng Lo, Chung-Ren Lao, Yun-Chou Wei, Yin Chen, Hsin-Hui Lee, Hsueh-Jung Lin, Wen-Chih Lu, Ting-Jung Lu
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Publication number: 20190391701Abstract: An optical device is provided. The optical device includes a substrate including a plurality of pixel units, a dielectric layer disposed on the substrate, a patterned light-transmitting layer disposed on the dielectric layer and corresponding to the plurality of pixel units, and a plurality of continuous light-shielding layers disposed on the dielectric layer and located on both sides of the patterned light-transmitting layer. A method for fabricating an optical device is also provided.Type: ApplicationFiled: June 25, 2018Publication date: December 26, 2019Applicant: Vanguard International Semiconductor CorporationInventors: Chih-Cherng LIAO, Shih-Hao LIU, Wu-Hsi LU, Ming-Cheng LO, Chung-Ren LAO, Yun-Chou WEI, Yin CHEN, Hsin-Hui LEE, Hsueh-Jung LIN, Wen-Chih LU, Ting-Jung LU
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Patent number: 7977666Abstract: The present invention is disclosed that a device capable of normal incident detection of infrared light to efficiently convert infrared light into electric signals. The device includes a substrate, a first contact layer formed on the substrate, an active layer formed on the first contact layer, a barrier layer formed on the active layer and a second contact layer formed on the barrier layer, wherein the active layer includes multiple quantum dot layers.Type: GrantFiled: April 29, 2009Date of Patent: July 12, 2011Assignee: Academia SinicaInventors: Shiang-Yu Wang, Hong-Shi Ling, Ming-Cheng Lo, Chien-Ping Lee
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Publication number: 20110076794Abstract: A method of making a vertically structured light emitting diode includes: providing a sacrificial substrate having first and second portions; forming a first buffer layer on a surface of the sacrificial substrate; forming a second buffer layer on a surface of the first buffer layer; forming a light emitting unit on a surface of the second buffer layer; forming a device substrate on a surface of the light emitting unit; etching the first portion of the sacrificial substrate such that the second portion of the sacrificial substrate remains on the first buffer layer; dry-etching the second portion of the sacrificial substrate; dry-etching the first buffer layer; and etching the second buffer layer. An etch rate of a material of the second buffer layer is lower than an etch rate of a material of the first buffer layer.Type: ApplicationFiled: August 31, 2010Publication date: March 31, 2011Inventors: Ming-Cheng Lo, Hung-Jen Chen, Juh-Yuh Su
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Publication number: 20100117060Abstract: The present invention is disclosed that a device capable of normal incident detection of infrared light to efficiently convert infrared light into electric signals. The device comprises a substrate, a first contact layer formed on the substrate, an active layer formed on the first contact layer, a barrier layer formed on the active layer and a second contact layer formed on the barrier layer, wherein the active layer comprises multiple quantum dot layers.Type: ApplicationFiled: April 29, 2009Publication date: May 13, 2010Applicant: Academia SinicaInventors: Shiang-Yu Wang, Hong-Shi Ling, Ming-Cheng Lo, Chien-Ping Lee