Abstract: A memory device is provided that includes a memory array including a first array, a first redundant array that is local to the first array, a second array, and a second redundant array that is local to the second array, a cache array including a first cache, a first redundant cache that is local to the first cache, a second cache and a second redundant cache that is local to the second cache, and circuits comprising logic to execute operations. The operations include, responsive to an identification of a defective column in the first array, performing a local defect write repair and responsive to an identification of another defective column in the first array and a determination that the first redundant array is fully utilized, performing a global defect write repair by transferring data into the second redundant array through the first cache and the second redundant cache.

Abstract: A memory device is provided that includes a memory array including a first array, a first redundant array that is local to the first array, a second array, and a second redundant array that is local to the second array, a cache array including a first cache, a first redundant cache that is local to the first cache, a second cache and a second redundant cache that is local to the second cache, and circuits comprising logic to execute operations. The operations include, responsive to an identification of a defective column in the first array, performing a local defect write repair and responsive to an identification of another defective column in the first array and a determination that the first redundant array is fully utilized, performing a global defect write repair by transferring data into the second redundant array through the first cache and the second redundant cache.